BSR15
BSR16
SMALL SIGNAL PNP TRANSISTORS
■SILICONEPITAXIALPLANAR PNP
TRANSISTORS
■MINIATUREPLASTICPACKAGEFOR
APPLICATIONIN SURFACE MOUNTING
CIRCUITS
■MEDIUMCURRENT AFAMPLIFICATION
ANDSWITCHING
■NPNCOMPLEMENTS ARERESPECTIVELY
BSR13ANDBSR14
INTERNAL SCHEMATIC DIAGRAM
March 1996
1
2
3
SOT-23
Type Marking
BSR15 T7
BSR16 T8
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BSR15 BSR16
VCBO Collector-Emitter Voltage (VBE =0) -60 -60 V
V
CEO Collector-Emitter Voltage (IB=0) -40 -60 V
V
EBO Emitter-Base Voltage (IC=0) -5 V
I
CM Collector Peak Current -0.6 A
Ptot Total Dissipation at Tc=25o
C 350 mW
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
1/5
THERMAL DATA
Rthj-amb •Thermal Resistance Junction-Ambient Max 350 oC/W
•Mountedon aceramic substrate area = 15 x15 x 0.5mm
ELECTRICAL CHARACTERISTICS (Tcase =25oC unlessotherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEX Collector Cut-off
Current VCE =-30V V
BE =-3V -50 nA
I
BEX Base Cut-off Current VCE =-30V V
BE =-3V -50 nA
I
CBO Collector Cut-off
Current (IE=0) V
CB =-50V
for BSR15
for BSR16
VCB =-50V T
j=150o
C
for BSR15
for BSR16
-20
-10
-20
-10
nA
nA
µA
µA
V(BR)CEO∗Collector-Emitter
Breakdown Voltage
(IB=0)
I
C=-10mA
for BSR15
for BSR16 -40
-60 V
V
V(BR)CBO∗Collector-Base
Breakdown Voltage
(Ie=0)
I
C=-10µA-60V
V
(BR)EBO Emitter-Base
Breakdown Voltage
(IC=0)
I
E=-10µA-5V
V
CE(sat)∗Collector-Emitter
Saturation Voltage IC=-150mA I
B=-15mA
I
C=-500mA I
B=-50mA -0.4
-1.6 V
V
VBE(sat)∗Collector-Base
Saturation Voltage IC=-150mA I
B=-15mA
I
C=-500mA I
B=-50mA -1.3
-2.6 V
V
hFE∗DC Current Gain IC=-0.1mA V
CE =-10V
for BSR15
for BSR16
IC=-1mA V
CE =-10V
for BSR15
for BSR16
IC=-10mA V
CE =-10V
for BSR15
for BSR16
IC=-150mA V
CE =-10V
for BSR15
for BSR16
IC=-500mA V
CE =-10V
for BSR15
for BSR16
35
75
50
100
75
100
100
100
30
50
300
300
fTTransition Frequency IC=-50mA V
CE = -20V f = 100MHz 200 MHz
CCB Collector Base
Capacitance IE=0 V
CB = -10 V f = 1 MHz 8 pF
CEB Emitter Base
Capacitance IC=0 V
EB =-2V f=1MHz 30 pF
∗
Pulsed: Pulse duration = 300 µs, duty cycle≤2%
BSR15/BSR16
2/5
ELECTRICAL CHARACTERISTICS (Continued)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tdDelay Time IC=-150mA I
B1 = -15 mA 10 ns
trRise Time 40 ns
ton Switching On Time 45 ns
tsStorage Time IC=-150mA I
B1 =-I
B2 = -15mA 80 ns
tfFall Time 30 ns
toff Switching Off Time 100 ns
∗
Pulsed: Pulse duration = 300 µs, duty cycle≤2%
BSR15/BSR16
3/5
DIM. mm mils
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.85 1.1 33.4 43.3
B 0.65 0.95 25.6 37.4
C 1.20 1.4 47.2 55.1
D 2.80 3 110.2 118
E 0.95 1.05 37.4 41.3
F 1.9 2.05 74.8 80.7
G 2.1 2.5 82.6 98.4
H 0.38 0.48 14.9 18.8
L 0.3 0.6 11.8 23.6
M 0 0.1 0 3.9
N 0.3 0.65 11.8 25.6
O 0.09 0.17 3.5 6.7
0044616/B
SOT-23 MECHANICAL DATA
BSR15/BSR16
4/5
Information furnishedis believed to be accurate and reliable. However,SGS-THOMSONMicroelectronics assumesno responsability for the
consequencesof use ofsuch information nor forany infringement of patentsor otherrights ofthird parties whichmay resultsfrom its use. No
licenseis grantedby implicationor otherwise underany patent orpatent rights ofSGS-THOMSON Microelectronics. Specifications mentioned
in this publicationare subject to change without notice.This publication supersedes and replaces all information previously supplied.
SGS-THOMSONMicroelectronics productsare notauthorized for use ascriticalcomponents in lifesupportdevices or systems withoutexpress
writtenapproval of SGS-THOMSON Microelectonics.
1995 SGS-THOMSONMicroelectronics- Printedin Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia- Brazil - Canada- China- France- Germany- HongKong- Italy- Japan- Korea- Malaysia- Malta- Morocco- TheNetherlands -
Singapore- Spain- Sweden- Switzerland - Taiwan - Thailand - United Kingdom- U.S.A
.
BSR15/BSR16
5/5
