BSR15 BSR16 SMALL SIGNAL PNP TRANSISTORS Type Marking BSR15 T7 BSR16 T8 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING NPN COMPLEMENTS ARE RESPECTIVELY BSR13 AND BSR14 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t BSR15 BSR16 V CBO Collector-Emitter Voltage (V BE = 0) -60 -60 V V CEO Collector-Emitter Voltage (I B = 0) -40 -60 V V EBO Emitter-Base Voltage (I C = 0) I CM Collector Peak Current P t ot Total Dissipation at T c = 25 C T stg Storage Temperature Tj March 1996 o Max. O perating Junction Temperature -5 V -0.6 A 350 mW -65 to 150 o C 150 o C 1/5 BSR15/BSR16 THERMAL DATA R t hj- amb * Thermal Resistance Junction-Ambient Max o 350 C/W * Mounted on a ceramic substrate area = 15 x 15 x 0.5 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it I CEX Collector Cut-off Current V CE = -30 V V BE = -3 V -50 nA I BEX Base Cut-off Current V CE = -30 V V BE = -3 V -50 nA I CBO Collector Cut-off Current (IE = 0) V CB = -50 V for BSR15 for BSR16 V CB = -50 V for BSR15 for BSR16 -20 -10 nA nA -20 -10 A A o T j = 150 C V ( BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) I C = -10 mA for BSR15 for BSR16 -40 -60 V V V ( BR)CBO Collector-Base Breakdown Voltage (I e = 0) I C = -10 A -60 V V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = -10 A -5 V V CE(sat ) Collector-Emitter Saturation Voltage I C = -150 mA I C = -500 mA IB = -15 mA IB = -50 mA -0.4 -1.6 V V V BE(s at) Collector-Base Saturation Voltage I C = -150 mA I C = -500 mA IB = -15 mA IB = -50 mA -1.3 -2.6 V V DC Current G ain I C = -0.1 mA for BSR15 for BSR16 I C = -1 mA for BSR15 for BSR16 I C = -10 mA for BSR15 for BSR16 I C = -150 mA for BSR15 for BSR16 I C = -500 mA for BSR15 for BSR16 V CE = -10 V hFE V CE = -10 V 50 100 VCE = -10 V 75 100 V CE = -10 V 100 100 300 300 V CE = -10 V 30 50 Transition F requency I C = -50 mA V CE = -20V f = 100MHz C CB Collector Base Capacitance IE = 0 V CB = -10 V f = 1 MHz 8 pF C EB Emitter Base Capacitance IC = 0 V EB = -2 V f = 1 MHz 30 pF fT Pulsed: Pulse duration = 300 s, duty cycle 2 % 2/5 35 75 200 MHz BSR15/BSR16 ELECTRICAL CHARACTERISTICS (Continued) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it td Delay Time 10 ns tr Rise Time 40 ns t on Switching On Time 45 ns ts Storage Time 80 ns tf Fall T ime t of f I C = -150 mA I C = -150 mA Switching Off Time IB1 = -15 mA IB1 = -I B2 = -15mA 30 ns 100 ns Pulsed: Pulse duration = 300 s, duty cycle 2 % 3/5 BSR15/BSR16 SOT-23 MECHANICAL DATA mm DIM. MIN. TYP. mils MAX. MIN. TYP. MAX. A 0.85 1.1 33.4 43.3 B 0.65 0.95 25.6 37.4 C 1.20 1.4 47.2 55.1 D 2.80 3 110.2 118 E 0.95 1.05 37.4 41.3 F 1.9 2.05 74.8 80.7 G 2.1 2.5 82.6 98.4 H 0.38 0.48 14.9 18.8 L 0.3 0.6 11.8 23.6 M 0 0.1 0 3.9 N 0.3 0.65 11.8 25.6 O 0.09 0.17 3.5 6.7 0044616/B 4/5 BSR15/BSR16 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 5/5