Order this document by MJE341/D SEMICONDUCTOR TECHNICAL DATA 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150 - 200 VOLTS 20 WATTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers. MAXIMUM RATINGS Rating Symbol MJE341 MJE344 Unit VCEO 150 200 Vdc Collector-Base Voltage VCB 175 200 Vdc Emitter-Base Voltage VEB 3.0 5.0 Vdc Collector-Emitter Voltage Collector Current -- Continuous IC 500 mAdc Base Current IB 250 mAdc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 20 0.16 Watts W/_C TJ, Tstg - 65 to + 150 _C Symbol Max Unit JC 6.25 _C/W Operating and Storage Junction Temperature Range CASE 77-08 TO-225AA TYPE THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case IC, COLLECTOR CURRENT (AMP) 1.0 500 s 0.5 1.0 ms 0.2 TJ = 150C ALL ALL 0.1 dc 0.05 SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMIT TC = 25C 0.02 0.01 10 20 60 100 30 40 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 300 Figure 1. Active Region Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation then the curves indicate. The data of Figure 1 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less then the limitations imposed by second breakdown. v REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit 150 200 -- -- -- -- 1.0 1.0 -- -- 0.3 0.1 -- -- 0.1 0.1 20 25 30 20 -- 200 300 -- -- -- 1.0 2.3 VBE(on) -- 1.0 Vdc fT 15 -- MHz Output Capacitance (VCB = 20 Vdc, IE = 0, f = 100 kHz) Cob -- 15 pF Small-Signal Current Gain (IC = 50 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 25 -- -- OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0) VCEO(sus) MJE341 MJE344 Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 200 Vdc, IB = 0) MJE341 MJE344 Collector Cutoff Current (VCB = 175 Vdc, IE = 0) (VCB = 200 Vdc, IE = 0) MJE341 MJE344 Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) (VEB = 5.0 Vdc, IC = 0) MJE341 MJE344 Vdc ICEO mAdc ICBO mAdc IEBO mAdc ON CHARACTERISTICS DC Current Gain (IC = 10 mAdc, VCE = 10 Vdc) (IC = 50 mAdc, VCE = 10 Vdc) hFE (IC = 150 mAdc, VCE = 10 Vdc) MJE341 MJE341 MJE344 MJE341 Collector-Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc) (IC = 150 mAdc, IB = 15 mAdc) MJE344 MJE341 -- VCE(sat) Base-Emitter On Voltage (IC = 50 mAdc, VCE = 10 Vdc) Vdc DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 50 mAdc, VCE = 25 Vdc, f = 10 MHz) 300 1.0 VCE = 2.0 V VCE = 10 V 200 0.8 100 VOLTAGE (VOLTS) hFE, CURRENT GAIN TJ = +150C +100C 70 50 30 + 25C - 55C VBE(sat) @ IC/IB = 10 VBE @ VCE = 10 V 0.6 0.4 VCE(sat) @ IC/IB = 10 20 0.2 TJ = + 25C IC/IB = 5.0 10 1.0 20 50 70 100 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) Figure 2. DC Current Gain 2 200 300 500 0 10 20 30 200 300 50 100 IC, COLLECTOR CURRENT (mA) Figure 3. "On" Voltages Motorola Bipolar Power Transistor Device Data 500 PACKAGE DIMENSIONS -B- U F Q -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 --- STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-08 TO-225AA TYPE ISSUE V Motorola Bipolar Power Transistor Device Data 3 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 4 Motorola Bipolar Power Transistor Device Data *MJE341/D* MJE341/D