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April 1, 2003
To all our customers
Cautions
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4AK17
Silicon N-Channel Power MOS FET Array
ADE-208-1202 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
• Low on-resistance
RDS(on) ≤ 0.045 , VGS = 10 V, ID = 10 A
RDS(on) ≤ 0.065 , VGS = 4 V, ID = 10 A
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for motor driver, solenoid driver and lamp driver
4AK17
2
Outline
SP-10
2 G
1 S
4
G6
G8
G
3
D5
D7
D9
D
S 10 1, 10. Source
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain
12345678910
Absolute Maximum Ratings (Ta = 25°C) (1 Unit)
Item Symbol Rating Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID10 A
Drain peak current ID(pulse)*140 A
Body to drain diode reverse drain current IDR 10 A
Channel dissipation Pch (Tc = 25°C)*228 W
Channel dissipation Pch*24W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 4 devices operation
4AK17
3
Electrical Characteristics (Ta = 25°C) (1 Unit)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0
Gate to source breakdown
voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance RDS(on) — 0.033 0.045 ΩID = 10 A
VGS = 10 V*1
— 0.04 0.065 ΩID = 10 A
VGS = 4 V*1
Forward transfer admittance |yfs|1017—SI
D = 10 A
VDS = 10 V*1
Input capacitance Ciss — 1400 — pF VDS = 10 V
Output capacitance Coss — 720 — pF VGS = 0
Reverse transfer capacitance Crss — 220 — pF f = 1 MHz
Turn-on delay time td(on) — 15 — ns ID = 10 A
Rise time tr— 95 — ns VGS = 10 V
Turn-off delay time td(off) — 300 — ns RL = 3 Ω
Fall time tf— 170 — ns
Body to drain diode forward
voltage VDF — 1.05 — V IF = 10 A, VGS = 0
Body to drain diode reverse
recovery time trr — 110 — ns IF = 10 A, VGS = 0
dIF/dt = 50 A/µs
Note: 1. Pulse test
4AK17
4
6
4
2
0 50 100 150
Ambient Temperature Ta (°C)
Channel Dissipation Pch (W)
5
3
1
1257525
Condition : Channel Dissipation of
each die is identical
Maximum Channel Dissipation Curve
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
30
20
10
0 50 100 150
Case Temperature TC (°C)
Channel Dissipation Pch (W)
1257525
Condition : Channel Dissipation
of each die is identical
Maximum Channel Dissipation Curve
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
100
10
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Maximum Safe Operation Area
30
3
0.1
0.1 0.3 1.0 3 10 30 100
Ta = 25°C
10 µs
100 µs
1 ms
PW = 10 ms (1 shot)
DC Operation (TC = 25°C)
Operation in this area
is limited by R
DS (on)
0.3
1.0
Typical Output Characteristics
6
Drain to Source Voltage V
DS
(V)
84210
Drain Current ID (A)
0
10
20
30
40
0
50
VGS = 2.5 V
Pulse Test
10 V 8 V
6 V
3.5 V
3.0 V
4.0 V
4.5 V
4AK17
5
Typical Transfer Characteristics
3
Gate to Source Voltage V
GS
(V)
42105
10
20
30
40
50
0
Drain Current ID (A)
TC= 25°C
75°C
VDS = 10 V
Pulse Test –25°C
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
6
Gate to Source Voltage V
GS
(V)
842010
2
3
4
5
0
1
Drain to Source Saturation Voltage
VDS (on) (V)
Pulse Test
ID = 50 A
10 A
20 A
10
Drain Current I
D
(A)
2052 100
0.02
0.05
0.1
0.2
0.5
1
0.01
0.005 50
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain to Source on Static Resistance
RDS (on) (Ω)
VGS = 4 V
10 V
Pulse Test
80
Case Temperature T
C
(°C)
120400
0.02
0.04
0.06
0.08
0.10
–40
0160
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
RDS (on) (Ω)
ID = 20 A
20 A
Pulse Test
VGS = 4 V
VGS = 10 V
10 A
5 A
10 A 5 A
4AK17
6
Forward Transfer Admittance
vs. Drain Current
100
50
20
10
5
2
1
0.5 1.0 2 510 50
Drain Current ID (A)20
Forward Transfer Admittance yfs (S)
TC = 25°C
VDS = 10 V
Pulse Test –25°C
75°C
1,000
500
200
100
50
20
10
0.5 1.0 5 50
Reverse Drain Current IDR (A)
10
220
Body to Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
di/dt = 50 A/µs, Ta = 25°C
VGS = 0
Pulse Test
Typical Capacitance vs.
Drain to Source Voltage
10,000
3,000
1,000
300
30
10
Capacitance C (pF)
01020 50
Drain to Source Voltage VDS (V)
30
100
40
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
100
80
60
40
20
020 60
80
Gate Charge Qg (nc)
40
20
16
12
8
4
0
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
100
ID = 25 A
VDS VGS
VDD = 50 V
10 V
25 V
VDD = 50 V
25 V
10 V
4AK17
7
Switching Characteristics
1000
500
200
100
20
10
0.5 1.0 5 50
Drain Current ID (A)
10
220
Switching Time t (ns)
td (off)
tf
trVGS = 10 V VDD = 30 V
PW = 2µs, duty < 1 %
td (on)
50 •
•
50
40
30
20
10
0 0.4 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
0.8
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
VGS = 0, –5 V
Pulse Test
5 V
10 V
15 V
4AK17
8
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
SP-10
—
—
2.9 g
26.5 ± 0.3
1.82 2.54 1.4 0.55
1.5 ± 0.2
0.55 ± 0.1
4.0 ± 0.2
10.0 ± 0.310.5 ± 0.5
2.5
12345678910
+0.1
–0.06
As of January, 2001
Unit: mm
4AK17
9
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
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7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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