©2013 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGH30T65UPDT Rev. C1
FGH30T65UPDT — 650 V, 30 A Field Stop Trench IGBT
November 2013
FGH30T65UPDT
650V, 30A Field Stop Trench IGBT
Features
• Maximum Junction Temperature : T
J
= 175
o
C
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: V
CE(sat)
= 1.65 V (Typ.) @ I
C
= 30 A
• 100% of Parts Tested I
LM(2)
• High Input Impedance
• Tightened Parameter Distribution
• RoHS Compliant
• Short Circuit Ruggedness > 5 us @ 25
o
C
General Description
Using novel field stop trench IGBT technology, Fairchild’s new
series of field stop trench IGBTs offer the optimum performance
for solar inverter , UPS and digital power generator where low
conduction and switching losses are essential.
Applications
• Solar Inverter, UPS, Digital Power Generator
Absolute Maximum Ratings
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
2: I
C
= 90 A, V
CC
= 400 V, R
g
= 20 Ω
Thermal Characteristics
Symbol Description Ratings Unit
V
CES
Collector to Emitter Voltage 650 V
V
GES
Gate to Emitter Voltage ± 20 V
Transient Gate to Emitter Voltage ± 25 V
I
C
Collector Current @ T
C
= 25
o
C 60 A
Collector Current @ T
C
= 100
o
C 30 A
I
CM(1)
Pulsed Collector Current 90 A
I
LM(2)
Clamped Inductive Load Current 90 A
I
F
Diode Forward Current @ T
C
= 25
o
C 60 A
Diode Forward Current @ T
C
= 100
o
C 30 A
I
FM(1)
Pulsed Diode Maximum Forward Current 150 A
P
D
Maximum Power Dissipation @ T
C
= 25
o
C 250 W
Maximum Power Dissipation @ T
C
= 100
o
C 125 W
SCWT Short Circuit Withstand Time @ T
C
= 25
o
C 5 us
T
J
Operating Junction Temperature -55 to +175
o
C
T
stg
Storage Temperature Range -55 to +175
o
C
T
L
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300
o
C
Symbol Parameter Typ. Max. Unit
R
θJC
(IGBT) Thermal Resistance, Junction to Case - 0.60
o
C/W
R
θJC
(Diode) Thermal Resistance, Junction to Case - 1.2
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient - 40
o
C/W
G
C
E
COLLECTOR
(FLANGE)
ECG
FGH30T65UPDT — 650 V, 30 A Field Stop Trench IGBT
©2013 Fairchild Semiconductor Corporation
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FGH30T65UPDT Rev. C1
Package Marking and Ordering Information
Electrical Characteristics of the IGBT
T
C
= 25°C unless otherwise noted
Part Number Top Mark Package Packing
Method Reel Size Tape Width Quantity
FGH30T65UPD_F155 FGH30T65UPD TO-247 G03 Tube N/A N/A 30
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BV
CES
Collector to Emitter Breakdown Voltage V
GE
= 0 V, I
C
= 1 mA 650 - - V
∆BV
CES
∆Τ
J
Temperature Coefficient of Breakdown
Voltage V
GE
= 0 V, I
C
= 250 uA - 0.65 - V/
o
C
I
CES
Collector Cut-Off Current V
CE
= V
CES
, V
GE
= 0 V - - 250 µA
I
GES
G-E Leakage Current V
GE
= V
GES
, V
CE
= 0 V - - ±400 nA
On Characteristics
V
GE(th)
G-E Threshold Voltage I
C
= 30 mA, V
CE
= V
GE
4.0 6.0 7.5 V
V
CE(sat)
Collector to Emitter Saturation Voltage
I
C
= 30 A
,
V
GE
= 15 V
- 1.65 2.3 V
I
C
= 30 A
,
V
GE
= 15 V,
T
C
= 175
o
C- 2.1 - V
Dynamic Characteristics
C
ies
Input Capacitance
V
CE
= 30 V
,
V
GE
= 0 V,
f = 1 MHz
- 2280 - pF
C
oes
Output Capacitance - 85 - pF
C
res
Reverse Transfer Capacitance - 40 - pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
CC
= 400 V, I
C
= 30 A,
R
G
= 8 Ω, V
GE
= 15 V,
Inductive Load, T
C
= 25
o
C
- 22 - ns
t
r
Rise Time - 26 - ns
t
d(off)
Turn-Off Delay Time - 139 - ns
t
f
Fall Time - 18 - ns
E
on
Turn-On Switching Loss - 0.76 - mJ
E
off
Turn-Off Switching Loss - 0.40 - mJ
E
ts
Total Switching Loss - 1.16 - mJ
t
d(on)
Turn-On Delay Time
V
CC
= 400 V, I
C
= 30 A,
R
G
= 8 Ω, V
GE
= 15V,
Inductive Load, T
C
= 175
o
C
- 22 - ns
t
r
Rise Time - 30 - ns
t
d(off)
Turn-Off Delay Time - 151 - ns
t
f
Fall Time - 19 - ns
E
on
Turn-On Switching Loss - 1.20 - mJ
E
off
Turn-Off Switching Loss - 0.53 - mJ
E
ts
Total Switching Loss - 1.73 - mJ
Tsc Short Circuit Withstand Time V
GE
= 15 V, V
CC
< 400 V,
Rg = 10 Ω
5 - - us
Q
g
Total Gate Charge
V
CE
= 400 V, I
C
= 30 A,
V
GE
= 15 V
- 155 - nC
Q
ge
Gate to Emitter Charge - 21 - nC
Q
gc
Gate to Collector Charge - 91 - nC
FGH30T65UPDT — 650 V, 30 A Field Stop Trench IGBT
©2013 Fairchild Semiconductor Corporation
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FGH30T65UPDT Rev. C1
Electrical Characteristics of the Diode
T
C
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max Unit
V
FM
Diode Forward Voltage I
F
= 30 A T
C
= 25
o
C - 2.3 3.0 V
T
C
= 175
o
C - 1.9 -
E
rec
Reverse Recovery Energy
I
F
= 30 A, di
F
/dt = 200 A/µs
T
C
= 175
o
C - 35 - uJ
t
rr
Diode Reverse Recovery Time T
C
= 25
o
C - 33 43 ns
T
C
= 175
o
C - 148
Q
rr
Diode Reverse Recovery Charge T
C
= 25
o
C - 57 80 nC
T
C
= 175
o
C - 560
FGH30T65UPDT — 650 V, 30 A Field Stop Trench IGBT
©2013 Fairchild Semiconductor Corporation
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FGH30T65UPDT Rev. C1
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Saturation Voltage vs. Case
Characteristics Temperature at Variant Current Leve
Figure 5. Saturation Voltage vs. V
GE
Figure 6. Saturation Voltage vs. V
GE
0246810
0
30
60
90
8 V
V
GE
=
20 V
T
C
= 25
o
C
15 V
12 V
10 V
Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
0246810
0
30
60
90
8 V
V
GE
=
20 V
T
C
= 175
o
C
15 V
12 V
10 V
Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
012345
0
30
60
90
Common Emitter
V
GE
= 15 V
T
C
= 25
o
C
T
C
= 175
o
C
Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
25 50 75 100 125 150 175
1.0
1.5
2.0
2.5
3.0
3.5
30 A
60 A
I
C
= 15 A
Common Emitter
V
GE
= 15 V
Collector-Emitter Voltage, V
CE
[V]
Case Temperature, T
C
[
o
C]
4 8 12 16 20
0
4
8
12
16
20
I
C
= 15 A
60 A
30 A
Common Emitter
T
C
= 25
o
C
Collector-Emitter Voltage
,
VCE [V]
Gate-Emitter Voltage, V
GE
[V]
4 8 12 16 20
0
4
8
12
16
20
I
C
= 15 A
60 A
30 A
Common Emitter
T
C
= 175
o
C
Collector-Emitter Voltage
,
VCE [V]
Gate-Emitter Voltage, V
GE
[V]
FGH30T65UPDT — 650 V, 30 A Field Stop Trench IGBT
©2013 Fairchild Semiconductor Corporation
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FGH30T65UPDT Rev. C1
Typical Performance Characteristics
Figure 7. Capacitance Characteristic Figure 8. Gate charge Characteristics
Figure 9. Turn-on Characteristics vs. Figure 10. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
Figure 11. Switching Loss vs. Figure 12. Turn-on Characteristics vs.
Gate Resistance Collector Current
0 40 80 120 160
0
3
6
9
12
15
200 V
Common Emitter
T
C
= 25
o
C
V
CC
= 300 V
400 V
Gate-Emitter Voltage, V
GE
[V]
Gate Charge, Q
g
[nC]
1 10
10
100
1000
10000
Common Emitter
V
GE
= 0 V, f = 1 MHz
T
C
= 25
o
C
C
res
C
oes
C
ies
Capacitance [pF]
Collector-Emitter Voltage, V
CE
[V]
30
0 10 20 30 40 50
10
100
500
Switching Time [ns]
Common Emitter
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A
T
C
= 25
o
C
T
C
= 175
o
C
t
d(on)
t
r
Gate Resistance, R
G
[
Ω
ΩΩ
Ω
]
0 10 20 30 40 50
10
100
1000
5000
Switching Time [ns]
Common Emitter
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A
T
C
= 25
o
C
T
C
= 175
o
C
t
d(off)
t
f
Gate Resistance, R
G
[
Ω
ΩΩ
Ω
]
0 15 30 45 60
1
10
100
500
Common Emitter
V
GE
= 15 V, R
G
= 8
Ω
Ω Ω
Ω
, V
CC
= 400 V
T
C
= 25
o
C
,
T
C
= 175
o
C
t
r
t
d(on)
Switching Time [ns]
Collector Current, I
C
[A]
0 10 20 30 40 50
0.1
1
10
30
Common Emitter
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A
T
C
= 25
o
C
T
C
= 175
o
C E
on
E
off
Switching Loss [mJ]
Gate Resistance, R
G
[
Ω
ΩΩ
Ω
]
FGH30T65UPDT — 650 V, 30 A Field Stop Trench IGBT
©2013 Fairchild Semiconductor Corporation
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FGH30T65UPDT Rev. C1
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Figure 14. Switching Loss vs.
Collector Current Collector Current
Figure 15. Load Current vs. Frequency Figure 16. SOA Characteristics
Figure 17. Forward Characteristics Figure 18. Reverse Revovery Current
0 15 30 45 60
1
10
100
1000
Common Emitter
V
GE
= 15 V, R
G
= 8
Ω
Ω Ω
Ω
, V
CC
= 400 V
T
C
= 25
o
C
,
T
C
= 175
o
C
t
d(off)
t
f
Switching Time [ns]
Collector Current, I
C
[A]
0 15 30 45 60
0.1
1
10
50
Common Emitter
V
GE
= 15 V, R
G
= 8
Ω
ΩΩ
Ω
T
C
= 25
o
C
T
C
= 175
o
C
E
on
E
off
Switching Loss [mJ]
Collector Current, I
C
[A]
0.1 1 10 100 1000
0.01
0.1
1
10
100
IcMAX
(Continuous)
IcMAX (Pulsed)
1 ms
10 ms
DC Operation
Single Nonrepetitive
Pulse Tc = 25
o
C
Curves must be derated
linearly with increase
in temperature
10
µ
µ µ
µ
s
100
µ
µµ
µ
s
Collector Current, I
c
[A]
Collector-Emitter Voltage, V
CE
[V]
1k 10k 100k 1M
0
30
60
90
120
150
Duty cycle : 50%
T
C
= 100
o
C
Power Dissipation = 125 W
V
CC
= 400 V
load Current : peak of square wave
T
C
= 100
o
C
Collector Current, I
C
A]
Switching Frequency, f
[Hz]
0 15 30 45 60
0
2
4
6
8
10
T
C
= 25
o
C
T
C
= 175
o
C
di
F
/dt = 200 A/
µ
µµ
µ
s
100 A/
µ
µµ
µ
s
di
F
/dt = 200 A/
µ
µµ
µ
s
100 A/
µ
µµ
µ
s
Reverse RecoveryCurrent, I
rr
[A]
Forward Current, I
F
[A]
0 1 2 3 4
1
10
100
T
C
= 175
o
C
T
C
= 75
o
C
T
C
= 25
o
C
Forward Voltage, V
F
[V]
Forward Current, I
F
[A]
FGH30T65UPDT — 650 V, 30 A Field Stop Trench IGBT
©2013 Fairchild Semiconductor Corporation
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FGH30T65UPDT Rev. C1
Typical Performance Characteristics
Figure 19. Reverse Recovery Time Figure 20. Stored Charge
Figure 21. Transient Thermal Impedance of IGBT
Figure 22. Transient Thermal Impedance of Diode
0 15 30 45 60
0
200
400
600
800
200 A/
µ
µµ
µ
s
200 A/
µ
µµ
µ
s
di
F
/dt = 100 A/
µ
µµ
µ
s
di
F
/dt = 100 A/
µ
µµ
µ
s
T
C
= 25
o
C
T
C
= 175
o
C
Stored Recovery Charge, Q
rr
[nC]
Forwad Current, I
F
[A]
0 15 30 45 60
0
40
80
120
160
200
T
C
= 25
o
C
T
C
= 175
o
C
di
F
/dt = 100 A/
µ
µµ
µ
s
200 A/
µ
µµ
µ
s
di
F
/dt = 100 A/
µ
µµ
µ
s
200 A/
µ
µµ
µ
s
Reverse Recovery Time, t
rr
[ns]
Forward Current, I
F
[A]
1E-5 1E-4 1E-3 0.01 0.1
1E-3
0.01
0.1
1
0.01
0.02
0.1
0.05
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak T
j
= Pdm x Zthjc + T
C
0.5
t
1
P
DM
t
2
1E-5 1E-4 1E-3 0.01 0.1 1
0.01
0.1
1
2
0.01
0.02
0.1
0.05
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak T
j
= Pdm x Zthjc + T
C
0.5
t
1
P
DM
t
2
FGH30T65UPDT — 650 V, 30 A Field Stop Trench IGBT
©2013 Fairchild Semiconductor Corporation
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FGH30T65UPDT Rev. C1
Mechanical Dimensions
Figure 23. TO247, Molded, 3-Lead, JEDEC AB Long Lead
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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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Dimensions in Millimeters
FGH30T65UPDT — 650 V, 30 A Field Stop Trench IGBT
©2013 Fairchild Semiconductor Corporation
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FGH30T65UPDT Rev. C1
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PRODUCT STATUS DEFINITIONS
Definition of Terms
AccuPower™
AX-CAP
®
*
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
®
Dual Cool™
EcoSPARK
®
EfficentMax™
ESBC™
Fairchild
®
Fairchild Semiconductor
®
FACT Quiet Series™
FACT
®
FAST
®
FastvCore™
FETBench™
FPS™
F-PFS™
FRFET
®
Global Power Resource
SM
GreenBridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
mWSaver
®
OptoHiT™
OPTOLOGIC
®
OPTOPLANAR
®
PowerTrench
®
PowerXS™
Programmable Active Droop™
QFET
®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM
®
STEALTH™
SuperFET
®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
®
SyncFET™
Sync-Lock™
®*
TinyBoost
®
TinyBuck
®
TinyCalc™
TinyLogic
®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
TRUECURRENT
®
*
µSerDes™
UHC
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
™
Datasheet Identification Product Status Definition
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may change in any manner without notice.
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Datasheet contains preliminary data; supplementary data will be published at a later
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.
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Rev. I66
®
