TJ150F06M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ150F06M3L 1. Applications * Relay Drivers * Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 4.3 m (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 A (max) (VDS = -60 V) (3) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25 25 Characteristics Symbol Rating Unit V Drain-source voltage VDSS -60 Gate-source voltage VGSS -20/+10 Drain current (DC) (Note 1) ID -150 Drain current (pulsed) (Note 1) IDP -450 PD 300 W (Note 2) EAS 430 mJ IAR -150 A Channel temperature (Note 3) Tch 175 Storage temperature (Note 3) Tstg -55 to 175 Power dissipation (Tc = 25) Single-pulse avalanche energy Avalanche current Note: A Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2012-01-13 Rev.1.0 TJ150F06M3L 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Symbol Max Unit Rth(ch-c) 0.5 /W Note 1: Ensure that the channel temperature does not exceed 175. Note 2: VDD = -25 V, Tch = 25 (initial), L = 26 H, RG = 25 , IAR = -150 A Note 3: The definitions of the absolute maximum channel and storage temperatures are based on AEC-Q101. Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2 2012-01-13 Rev.1.0 TJ150F06M3L 6. Electrical Characteristics unless otherwise specified) 6.1. Static Characteristics (Ta = 25 25 Characteristics Symbol Gate leakage current IGSS VGS = -16/+10 V, VDS = 0 V Drain cut-off current Drain-source breakdown voltage Drain-source breakdown voltage (Note 4) Min Typ. Max Unit 10 A IDSS VDS = -60 V, VGS = 0 V -10 V(BR)DSS ID = -10 mA, VGS = 0 V -60 V(BR)DSX ID = -10 mA, VGS = 10 V -50 Vth VDS = -10 V, ID = -1 mA -2.0 -3.0 VGS = -6 V, ID = -75 A 4.7 6.1 VGS = -10 V, ID = -75 A 4.3 5.6 Gate threshold voltage Drain-source on-resistance Test Condition RDS(ON) V m Note 4: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode. unless otherwise specified) 6.2. Dynamic Characteristics (Ta = 25 25 Characteristics Symbol Input capacitance Ciss Test Condition VDS = -10 V, VGS = 0 V, f = 1 MHz Min Typ. Max Unit 12500 pF Reverse transfer capacitance Crss 880 Output capacitance Coss 1750 Switching time (rise time) tr 15 Switching time (turn-on time) ton 35 tf 465 toff 1760 Switching time (fall time) Switching time (turn-off time) See Fig. 6.2.1 ns Fig. 6.2.1 Switching Time Test Circuit unless otherwise specified) 25 6.3. Gate Charge Characteristics (Ta = 25 Characteristics Symbol Test Condition Min Typ. Max Unit Qg VDD -48 V, VGS = -10 V, ID = -150 A 420 nC Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Qgs1 83 Gate-drain charge Qgd 112 unless otherwise specified) 25 6.4. Source-Drain Characteristics (Ta = 25 Characteristics Reverse drain current (DC) (Note 5) Reverse drain current (pulsed) (Note 5) Symbol Test Condition Min Typ. Max Unit IDR -150 A -450 Diode forward voltage VDSF IDRP IDR = -75 A, VGS = 0 V 15 V Reverse recovery time trr 63 ns Reverse recovery charge Qrr IDR = -150 A, VGS = 0 V dIDR/dt = 50 A/s 60 nC Note 5: Ensure that the channel temperature does not exceed 175. 3 2012-01-13 Rev.1.0 TJ150F06M3L 7. Marking (Note) Fig. 7.1 Marking Note: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 4 2012-01-13 Rev.1.0 TJ150F06M3L 8. Moisture-Proof Packing This device is packed in a moisture-proof laminated aluminum bag. 8.1. Precautions for Transportation and Storage (Note) (1) Avoid excessive vibration during transportation. (2) Do not toss or drop the packed devices to avoid ripping of the bag. (3) After opening the moisture-proof bag, the devices should be assembled within two weeks in an (4) The moisture-proof bag may be stored unopened for up to 24 months at 5 to 30 and RH90% or below. (5) If, upon opening the bag, the moisture indicator card shows humidity of 30% or above (the color of the environment of 5 to 30 and RH70% or below. Perform reflow at most twice. 30% dot has changed from blue to pink) or the expiration date has passed, the devices should be baked as follows: Note: Baking conditions: 125 for 48 hours. Since the tape materials are not heat-proof, devices should be placed on either heat-proof trays or aluminum magazines when baking. The humidity indicator shows an approximate ambient humidity at 25. If the ambient humidity is below 30%, the color of all the indicator dots is blue. If, upon opening the bag, the color of the 30% dot has changed from blue to pink, the devices should be baked before assembly. Fig. 8.1.1 Humidity Indicator 5 2012-01-13 Rev.1.0 TJ150F06M3L 9. Characteristics Curves (Note) Fig. 9.1 ID - VDS Fig. 9.2 ID - VDS Fig. 9.3 ID - VGS Fig. 9.4 VDS - VGS Fig. 9.5 RDS(ON) - ID Fig. 9.6 RDS(ON) - Ta 6 2012-01-13 Rev.1.0 TJ150F06M3L Fig. 9.7 IDR - VDS Fig. 9.8 Capacitance - VDS Fig. 9.9 Vth - Ta Fig. 9.10 Dynamic Input/Output Characteristics Fig. 9.11 PD - Tc (Guaranteed Maximum) 7 2012-01-13 Rev.1.0 TJ150F06M3L Fig. 9.12 rth/Rth(ch-c) - tw (Guaranteed Maximum) Fig. 9.14 EAS - Tch (Guaranteed Maximum) Fig. 9.13 Safe Operating Area (Guaranteed Maximum) Fig. 9.15 Test Circuit/Waveform Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 8 2012-01-13 Rev.1.0 TJ150F06M3L Package Dimensions Unit: mm Weight: 1.07 g (typ.) Package Name(s) TOSHIBA: 2-10W1S Nickname: TO-220SM(W) 9 2012-01-13 Rev.1.0 TJ150F06M3L RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 10 2012-01-13 Rev.1.0