2N3823 iconix n-channel JFET ont, designed for . . . Soci gonge curves Net m= VHF Amplifiers BENEFITS } @ Low Noise @ Oscillators NF <2.5dB @ 100 MHz = Mixers TO-72 * See Section 7 ABSOLUTE MAXIMUM RATINGS (25C) Gate-Drain or Gate-Source Voltage (Note 1) ...... -30V Gate Current ........... severe sence ereeees TOMA Total Device Dissipation at (or below) 25C Free-Air Temperature (Note 2)......... ..+-. 300 mw Storage Temperature Range............. -65 to +200C y Lead Temperature (1/16' From Case for 10 Sec) .-- 300C s o 8 *ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) Characteristic Min Max Unit Test Conditions ! Gate Reverse C oe fA V@s =-20 V, Vpg = 0 SS GSss ate Reverse Current Se - VDS= 2 . -0.5 BA & s 150C 3 | qa} BYGss Gate-Source Breakdown Voltage -30 Ig =-1HA, Vps=0 4] TI Vastoft) Gate-Source Cutoff Voltage -8 Vv Vps=15V, ip =0.5nA 5 c VGs Gate~Source Voltage -1.0 -7.5 Vps = 15 V, Ip = 400 ZA 6 'pss Saturation Drain Current 4 20 mA Vos = 15 V, Vgs = 0 (Note 3) Common-Source Forward _ 7 9s Transconductance 3,500 | 6,500 f = 1 kHz (Note 3} Common-Source Forward _ 8 esl Transadmittance 3.200 f= 200 MHz Common-Source Output = 9) dD] Ses Conductance 36 umho f= 1 kHz (Note 3) Y Common-Source Input 10 | NI iss . 800 Vos = 15 V, Ves =0 A 5 f= 200 MHz Common-Source Output " Soss Conductance 200 wic Ciss Common-Source Input 6 Capacitance oF t=1MHe 13 Cc Common-Source Reverse 2 rss Transfer Capacitance : . Vos = 15 V, Vgs =0 . 4 NF Noise Figure 2.5 dB RG =1kQ f= 100 MHz *JEDEC Registered Data NOTES: 1, Due to symmetrical geometry, these units may be operated with source and drain leads interchanged. 2. Derate linearly to 178C free-air temperature at rate of 2 mW/C. 3. These parameters are measured during a 2 msec interval 100 msec after d-c power is apptied. 1979 Siliconix incorporated 3-10