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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BV
CEO
Phototransistor Optocouplers
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
October 2014
CNY171M, CNY172M, CNY173M, CNY174M,
CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M,
MOC8106M
6-Pin DIP High BV
CEO
Phototransistor Optocouplers
Features
■
High BV
CEO
: 70 V Minimum (CNY17XM, CNY17FXM,
MOC8106M)
■
Closely Matched Current Transfer Ratio (CTR)
Minimizes Unit-to-Unit Variation
■
Current Transfer Ratio In Select Groups
■
Very Low Coupled Capacitance Along With
No Chip-to-Pin 6 Base Connection for Minimum Noise
Susceptability (CNY17FXM, MOC8106M)
■
Safety and Regulatory Approvals:
– UL1577, 4,170 VAC
RMS
for 1 Minute
– DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
Applications
■
Power Supply Regulators
■
Digital Logic Inputs
■
Microprocessor Inputs
■
Appliance Sensor Systems
■
Industrial Controls
Description
The CNY17XM, CNY17FXM, and MOC8106M devices
consist of a gallium arsenide infrared emitting diode
coupled with an NPN phototransistor in a dual in-line
package.
Package Outlines
Figure 1. Package Outlines
Schematics
Figure 2. Schematics
CNY17F1M/2M/3M/4M
MOC8106M
CNY171M/2M/3M/4M
1
2
6
5 COLLECTOR COLLECTOR
4 EMITTERNC NC
NC
ANODE
CATHODE
3
1
2
6
5
4 EMITTER
BASE
ANODE
CATHODE
3
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 2
CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BV
CEO
Phototransistor Optocouplers
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
Parameter Characteristics
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
< 150 V
RMS
I–IV
< 300 V
RMS
I–IV
Climatic Classification 55/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
Comparative Tracking Index 175
Symbol Parameter Value Unit
V
PR
Input-to-Output Test Voltage, Method A, V
IORM
x 1.6 = V
PR
,
Type and Sample Test with t
m
= 10 s, Partial Discharge < 5 pC 1360 V
peak
Input-to-Output Test Voltage, Method B, V
IORM
x 1.875 = V
PR
,
100% Production Test with t
m
= 1 s, Partial Discharge < 5 pC 1594 V
peak
V
IORM
Maximum Working Insulation Voltage 850 V
peak
V
IOTM
Highest Allowable Over-Voltage 6000 V
peak
External Creepage
≥
7mm
External Clearance
≥
7mm
External Clearance (for Option TV, 0.4" Lead Spacing)
≥
10 mm
DTI Distance Through Insulation (Insulation Thickness)
≥
0.5 mm
T
S
Case Temperature
(1)
175 °C
I
S,INPUT
Input Current
(1)
350 mA
P
S,OUTPUT
Output Power
(1)
800 mW
R
IO
Insulation Resistance at T
S
, V
IO
= 500 V
(1)
> 10
9
Ω
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 3
CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BV
CEO
Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameters Value Units
TOTAL DEVICE
T
STG
Storage Temperature -40 to +125 °C
T
A
Ambient Operating Temperature -40 to +100 °C
T
J
Junction Temperature -40 to +125 ºC
T
SOL
Lead Solder Temperature 260 for 10 seconds °C
P
D
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
270 mW
2.94 mW/°C
EMITTER
I
F
Continuous Forward Current 60 mA
V
R
Reverse Voltage 6 V
I
F
(pk) Forward Current – Peak (1 µs pulse, 300 pps) 1.5 A
P
D
LED Power Dissipation 25°C Ambient
Derate Linearly From 25°C
120 mW
1.41 mW/°C
DETECTOR
I
C
Continuous Collector Current 50 mA
V
CEO
Collector-Emitter Voltage 70 V
V
ECO
Emitter Collector Voltage 7 V
P
D
Detector Power Dissipation @ 25°C
Derate Linearly from 25°C
150 mW
1.76 mW/°C
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 4
CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BV
CEO
Phototransistor Optocouplers
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Individual Component Characteristics
Transfer Characteristics
Symbol Parameters Test Conditions Device Min. Typ. Max. Units
EMITTER
V
F
Input Forward Voltage
I
F
= 10 mA All Devices 1.0 1.15 1.50 V
I
F
= 60 mA CNY17XM,
CNY17FXM 1.0 1.35 1.65
V
C
J
Capacitance V
F
= 0 V, f = 1.0 MHz All Devices 18 pF
I
R
Reverse Leakage
Current V
R
= 6 V All Devices 0.001 10 µA
DETECTOR
BV
CEO
Breakdown Voltage
Collector-to-Emitter I
C
= 1 mA, I
F
= 0 All Devices 70 100 V
BV
CBO
Collector-to-Base I
C
= 10 µA, I
F
= 0 CNY17XM 70 120
V
BV
ECO
Emitter-to-Collector I
E
= 100 µA, I
F
= 0 All Devices 7 10
V
I
CEO
Leakage Current
Collector-to-Emitter V
CE
= 10 V, I
F
= 0 All Devices 1 50 nA
I
CBO
Collector-to-Base V
CB
= 10 V, I
F
= 0 CNY17XM 20 nA
C
CE
Capacitance
Collector-to-Emitter V
CE
= 0, f = 1 MHz All Devices 8 pF
C
CB
Collector-to-Base V
CB
= 0, f = 1 MHz CNY17XM 20 pF
C
EB
Emitter-to-Base V
EB
= 0, f = 1 MHz CNY17XM 10 pF
Symbol Parameters Test Conditions
Device
Min. Typ. Max. Units
COUPLED
CTR Current Transfer
Ratio
I
F
= 10 mA, V
CE
= 10 V MOC8106M 50 150 %
I
F
= 10 mA, V
CE
= 5 V CNY171M, CNY17F1M 40 80 %
I
F
= 10 mA, V
CE
= 5 V CNY172M, CNY17F2M 63 125 %
I
F
= 10 mA, V
CE
= 5 V CNY173M, CNY17F3M 100 200 %
I
F
= 10 mA, V
CE
= 5 V CNY174M, CNY17F4M 160 320 %
V
CE(SAT)
Collector-Emitter
Saturation Voltage
I
C
= 0.5 mA, I
F
= 5 mA MOC8106M 0.4 V
I
C = 2.5 mA, IF = 10 mA CNY17XM/CNY17FXM
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 5
CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BVCEO Phototransistor Optocouplers
Electrical Characteristics (Continued)
TA = 25°C unless otherwise specified.
AC Characteristics
Isolation Characteristics
Symbol Parameters Test Conditions Device Min. Typ. Max. Units
NON-SATURATED SWITCHING TIME
ton Turn-On Time IC = 2.0 mA, VCC = 10 V, RL = 100 ΩAll Devices 2.0 10.0 µs
toff Turn-Off Time IC = 2.0 mA, VCC = 10 V, RL = 100 ΩAll Devices 3.0 10.0 µs
tdDelay Time IF = 10 mA, VCC = 5 V, RL = 75 ΩCNY17XM/CNY17FXM 5.6 µs
trRise Time IF = 10 mA, VCC = 5 V, RL = 75 ΩCNY17XM/CNY17FXM 4.0 µs
tsStorage Time IF = 10 mA, VCC = 5 V, RL = 75 ΩCNY17XM/CNY17FXM 4.1 µs
tfFall Time IF = 10 mA, VCC = 5 V, RL = 75 ΩCNY17XM/CNY17FXM 3.5 µs
SATURATED SWITCHING TIMES
tdDelay Time
IF = 20 mA, VCC = 5 V, RL = 1 kΩCNY171M/F1M 5.5 µs
IF = 10 mA, VCC = 5 V, RL = 1 kΩCNY172M/3M/4M
CNY17F2M/F3M/F4M 8.0 µs
trRise Time
IF = 20 mA, VCC = 5 V, RL = 1 kΩCNY171M/F1M 4.0 µs
IF = 10 mA, VCC = 5 V, RL = 1 kΩCNY172M/3M/4M
CNY17F2M/F3M/F4M 6.0 µs
tsStorage Time
IF = 20 mA, VCC = 5 V, RL = 1 kΩCNY171M/F1M 34.0 µs
IF = 10 mA, VCC = 5 V, RL = 1 kΩCNY172M/3M/4M
CNY17F2M/F3M/F4M 39.0 µs
tfFall Time
IF = 20 mA, VCC = 5 V, RL = 1 kΩCNY171M/F1M 20.0 µs
IF = 10 mA, VCC = 5 V, RL = 1 kΩCNY172M/3M/4M
CNY17F2M/F3M/F4M 24.0 µs
Symbol Characteristic Test Conditions Min. Typ. Max. Units
VISO Input-Output Isolation Voltage t = 1 Minute 4170 VACRMS
CISO Isolation Capacitance VI-O = 0 V, f = 1 MHz 0.2 pF
RISO Isolation Resistance VI-O = ±500 VDC, TA = 25°C 1011 Ω
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 6
CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BVCEO Phototransistor Optocouplers
Typical Performance Characteristics
Figure 3. Normalized CTR vs. Forward Current
IF – FORWARD CURRENT (mA)
0 2 4 6 8 101214161820
NORMALIZED CTR
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VCE = 5.0 V
TA = 25˚C
Normalized to
IF = 10 mA
Figure 4. Normalized CTR vs. Ambient Temperature
TA – AMBIENT TEMPERATURE (˚C)
-60 -40 -20 020 40 60 80 100
NORMALIZED CTR
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IF = 5 mA
IF = 10 mA
IF = 20 mA
Normalized to:
IF = 10 mA
TA = 25˚C
Figure 5. CTR vs. RBE (Unsaturated)
RBE – BASE RESISTANCE (kΩ)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VCE = 5.0 V
IF = 20 mA
IF = 10 mA IF = 5 mA
Figure 6. CTR vs. RBE (Saturated)
SWITCHING SPEED (μs)
Figure 7. Switching Speed vs. Load Resistor
R – LOAD RESISTOR (kΩ)
0.1 1 10 100
0.1
1
10
100
1000
Toff
Ton
Tf
IF = 10 mA
VCC = 10 V
TA = 25˚C
Tr
RBE – BASE RESISTANCE (kΩ)
RBE – BASE RESISTANCE (kΩ)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
IF = 20 mA
IF = 10 mA
IF = 5 mA
VCE = 0.3 V
NORMALIZED t
on
– (t
on(R
BE
)
/ t
on(open)
)
Figure 8. Normalized ton vs. RBE
10 100 1000 10000 100000
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VCC = 10 V
IC = 2 mA
RL = 100 Ω
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 7
CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BVCEO Phototransistor Optocouplers
Typical Performance Characteristics (Continued)
10 100 1000 10000 100000
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
V
CC =
10V
I
C
= 2mA
R
L
= 100Ω
NORMALIZED t
off
– (t
off(R
BE
)
/ t
off(open)
)
RBE – BASE RESISTANCE (kΩ)
Figure 9. Normalized toff vs. RBE
IF – LED FORWARD CURRENT (mA)
VF – FORWARD VOLTAGE (V)
Figure 10. LED Forward Voltage vs. Forward Current
1 10 100
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
T
A
= 25°C
T
A
= -55°C
T
A
= 100°C
0.01 0.1 1 10
0.001
0.01
0.1
1
10
100
I
F
= 5mA
I
F
= 20mA
I
F
= 10mA
Figure 11. Collector-Emitter Saturation Voltage vs. Collector Current
IC - COLLECTOR CURRENT (mA)
VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V)
I
F
= 2.5mA
T
A
= 25
˚C
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 8
CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BVCEO Phototransistor Optocouplers
Switching Test Circuit and Waveforms
Figure 12. Switching Test Circuit and Waveforms
Reflow Profile
Figure 13. Reflow Profile
R
L
I
F
I
C
V
CC
OUTPUT (VCE)INPUT
INPUT PULSE
OUTPUT PULSE
ton toff
tr
td
tf
ts
10%
90%
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
°C
Time (s)
0 60 180120 270
260°C
> 245°C = 42 s
Time above
183°C = 90 s
360
1.822°C/s Ramp-up rate
33 s
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 9
CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BVCEO Phototransistor Optocouplers
Ordering Information
Note:
2. The product orderable part number system listed in this table also applies to the CNY17FXM product family and the
MOC8106M device.
Marking Information
Figure 14. Top Mark
Table 1. Top Mark Definitions
Part Number Package Packing Method
CNY171M DIP 6-Pin Tube (50 Units)
CNY171SM SMT 6-Pin (Lead Bend) Tube (50 Units)
CNY171SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units)
CNY171TM DIP 6-Pin, 0.4” Lead Spacing Tube (50 Units)
CNY171VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units)
CNY171SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units)
CNY171SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units)
CNY171TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units)
1 Fairchild Logo
2 Device Number
3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
4 One-Digit Year Code, e.g., “4”
5 Digit Work Week, Ranging from “01” to “53”
6 Assembly Package Code
CNY17-1
1
2
6
43 5
V X YY
Q
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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