MBR60H100CTG - ON Semiconductor

June, 2005 − Rev. 0 1Publication Order Number:

MBR60H100CT/D

MBR60H100CT

SWITCHMODE™

Power Rectifier

100 V, 60 A

Features and Benefits

•Low Forward Voltage: 0.72 V @ 125°C

•Low Power Loss/High Efficiency

•High Surge Capacity

•175°C Operating Junction Temperature

•60 A Total (30 A Per Diode Leg)

•Guard−Ring for Stress Protection

•Pb−Free Package is Available

Applications

•Power Supply − Output Rectification

•Power Management

•Instrumentation

Mechanical Characteristics:

•Case: Epoxy, Molded

•Epoxy Meets UL 94 V−0 @ 0.125 in

•Weight: 1.9 Grams (Approximately)

•Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

•Lead Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

•Shipped 50 Units Per Plastic Tube

MAXIMUM RATINGS

Please See the Table on the Following Page

TO−220AB

CASE 221A

PLASTIC

SCHOTTKY BARRIER

RECTIFIER

60 AMPERES

100 VOLTS

2, 4

MARKING

DIAGRAM

YYWW

B60H100

A K A

YY = Year

WW = Work Week

B60H100 = Device Code

AKA = Polarity Designator

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Device Package Shipping

ORDERING INFORMATION

MBR60H100CT TO−220 50 Units/Rail

MBR60H100CTG TO−220

(Pb−Free) 50 Units/Rail

MBR60H100CT

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MAXIMUM RATINGS (Per Diode Leg)

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

100 V

Average Rectified Forward Current

(Rated VR) TC = 133°CIF(AV) 30 A

Peak Repetitive Forward Current

(Rated VR, Square Wave, 20 kHz) TC = 125°CIFRM 60 A

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 350 A

Operating Junction Temperature (Note 1) TJ+175 °C

Storage Temperature Tstg *65 to +175 °C

Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms

Controlled Avalanche Energy (see test conditions in Figures 10 and 11) WAVAL 400 mJ

ESD Ratings: Machine Model = C

Human Body Model = 3B > 400

> 8000 V

THERMAL CHARACTERISTICS

Maximum Thermal Resistance − Junction−to−Case

− Junction−to−Ambient RqJC

RqJA

1.0

70 °C/W

ELECTRICAL CHARACTERISTICS (Per Diode Leg)

Maximum Instantaneous Forward Voltage (Note 2)

(IF = 30 A, TC = 25°C)

(IF = 30 A, TC = 125°C)

(IF = 60 A, TC = 25°C)

(IF = 60 A, TC = 125°C)

vF0.84

0.72

0.98

0.84

Maximum Instantaneous Reverse Current (Note 2)

(Rated DC Voltage, TC = 125°C)

(Rated DC Voltage, TC = 25°C)

iR10

0.01

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%.

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, INSTANTANEOUS FORWARD CURRENT (AMPS)

Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

1000

0.1 0.40 0.2 1.0

TJ = 150°C

TJ = 25°C

0.80.6

IR, MAXIMUM REVERSE CURRENT (AMPS)

, REVERSE CURRENT (AMPS)

Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current

200

VR, REVERSE VOLTAGE (VOLTS)

1.0E−01

1.0E−02

1.0E−03

1.0E−06

1.0E−08 40

TJ = 125°C

TJ = 150°C

TJ = 25°C

IF, AVERAGE FORWARD CURRENT (AMPS)

Figure 5. Current Derating

TC, CASE TEMPERATURE (°C)

120110

0140 150130 160

SQUARE WAVE

PFO, AVERAGE POWER DISSIPATION

(WATTS)

150

IO, AVERAGE FORWARD CURRENT (AMPS)

0510

SQUARE

Figure 6. Forward Power Dissipation

1.2

10 TJ = 125°C

60 80 100

1.0E−07

1.0E−05

1.0E−04

200

VR, REVERSE VOLTAGE (VOLTS)

1.0E−01

1.0E−02

1.0E−03

1.0E−06

1.0E−08 40

TJ = 125°C

TJ = 150°C

TJ = 25°C

60 80 10

1.0E−07

1.0E−05

1.0E−04

170 180100

IF, INSTANTANEOUS FORWARD CURRENT (AMPS

)

VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

1000

0.1 0.40 0.2 1.0

TJ = 150°C

TJ = 25°C

0.80.6 1.2

TJ = 125°C

2520

100 100

4030 35 5045

9080

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C, CAPACITANCE (pF)

VR, REVERSE VOLTAGE (VOLTS)

100

10 40 80

TJ = 25°C

Figure 7. Capacitance

10020 60

10000

1000

R(t), TRANSIENT THERMAL RESISTANCE

Figure 8. Thermal Response Junction−to−Ambient

100

0.10.00001

t1, TIME (sec)

0.0001 0.001 0.01 1 10 1000.000001

0.1

100

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

0.2

0.1

0.05

0.01

R(t), TRANSIENT THERMAL RESISTANCE

Figure 9. Thermal Response Junction−to−Case

100

0.10.00001

t1, TIME (sec)

0.001 0.0001 0.001 0.01 1 10 1000.000001

0.1

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

0.2

0.1

0.05

0.01

0.001

0.01

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MERCURY

SWITCH

DUT

10 mH COIL

+VDD

BVDUT

ILID

VDD

t0t1t2t

Figure 10. Test Circuit Figure 11. Current−Voltage Waveforms

The unclamped inductive switching circuit shown in

Figure 10 was used to demonstrate the controlled avalanche

capability of this device. A mercury switch was used instead

of an electronic switch to simulate a noisy environment

when the switch was being opened.

When S 1 is closed at t0 the current in the inductor IL ramps

up linearly; and energy is stored in the coil. At t1 the switch

is opened and the voltage across the diode under test begins

to rise rapidly, due to di/dt effects, when this induced voltage

reaches the breakdown voltage of the diode, it is clamped at

BVDUT and the diode begins to conduct the full load current

which now starts to decay linearly through the diode, and

goes to zero at t2.

By solving the loop equation at the point in time when S1

is opened; and calculating the energy that is transferred to

the diode it can be shown that the total energy transferred is

equal t o the energy stored in the inductor plus a finite amount

of energy from the VDD power supply while the diode is in

breakdown (from t1 to t2) minus any losses due to finite

component resistances. Assuming the component resistive

elements are small Equation (1) approximates the total

energy transferred to the diode. It can be seen from this

equation that if the VDD voltage is low compared to the

breakdown voltage of the device, the amount of energy

contributed by the supply during breakdown is small and the

total ener gy can be assumed to be nearly equal to the ener gy

stored in the coil during the time when S1 was closed,

Equation (2).

WAVAL [1

2LI2

LPKǒBVDUT

BVDUT–VDDǓ

WAVAL [1

2LI2

LPK

EQUATION (1):

EQUATION (2):

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PACKAGE DIMENSIONS

TO−220

PLASTIC

CASE 221A−09

ISSUE AA

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 −−− 1.15 −−−

Z−−− 0.080 −−− 2.04

123

SEATING

PLANE

−T−

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MBR60H100CT/D

SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.

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