MBR60H100CT SWITCHMODETM Power Rectifier 100 V, 60 A Features and Benefits * * * * * * * http://onsemi.com Low Forward Voltage: 0.72 V @ 125C Low Power Loss/High Efficiency High Surge Capacity 175C Operating Junction Temperature 60 A Total (30 A Per Diode Leg) Guard-Ring for Stress Protection Pb-Free Package is Available SCHOTTKY BARRIER RECTIFIER 60 AMPERES 100 VOLTS 1 2, 4 Applications 3 * Power Supply - Output Rectification * Power Management * Instrumentation MARKING DIAGRAM 4 Mechanical Characteristics: * * * * * * Case: Epoxy, Molded Epoxy Meets UL 94 V-0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 Units Per Plastic Tube TO-220AB CASE 221A PLASTIC 1 2 YYWW B60H100 AKA 3 YY WW B60H100 AKA = Year = Work Week = Device Code = Polarity Designator MAXIMUM RATINGS ORDERING INFORMATION Please See the Table on the Following Page Device MBR60H100CT MBR60H100CTG (c) Semiconductor Components Industries, LLC, 2005 June, 2005 - Rev. 0 1 Package Shipping TO-220 50 Units/Rail TO-220 (Pb-Free) 50 Units/Rail Publication Order Number: MBR60H100CT/D MBR60H100CT MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current (Rated VR) TC = 133C IF(AV) 30 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 125C IFRM 60 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 350 A TJ +175 C Storage Temperature Tstg *65 to +175 C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms WAVAL 400 mJ > 400 > 8000 V 1.0 70 C/W Operating Junction Temperature (Note 1) Controlled Avalanche Energy (see test conditions in Figures 10 and 11) ESD Ratings: Machine Model = C Human Body Model = 3B THERMAL CHARACTERISTICS Maximum Thermal Resistance - Junction-to-Case - Junction-to-Ambient RqJC RqJA ELECTRICAL CHARACTERISTICS (Per Diode Leg) Maximum Instantaneous Forward Voltage (Note 2) (IF = 30 A, TC = 25C) (IF = 30 A, TC = 125C) (IF = 60 A, TC = 25C) (IF = 60 A, TC = 125C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 125C) (Rated DC Voltage, TC = 25C) iR V 0.84 0.72 0.98 0.84 mA 10 0.01 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. http://onsemi.com 2 1000 100 TJ = 150C 10 TJ = 125C TJ = 25C 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) MBR60H100CT 1000 100 TJ = 150C TJ = 125C 10 TJ = 25C 1 0.1 0 0.2 1.0E-01 IR, REVERSE CURRENT (AMPS) 1.0E-01 TJ = 125C TJ = 125C 1.0E-04 1.0E-05 1.0E-05 TJ = 25C 1.0E-06 TJ = 25C 1.0E-06 1.0E-07 1.0E-07 1.0E-08 0 20 40 60 80 100 60 40 80 100 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current dc 40 35 SQUARE WAVE 25 20 15 10 5 0 90 20 VR, REVERSE VOLTAGE (VOLTS) 50 45 1.0E-08 0 PFO, AVERAGE POWER DISSIPATION (WATTS) IF, AVERAGE FORWARD CURRENT (AMPS) TJ = 150C 1.0E-03 1.0E-04 80 1.2 1.0 1.0E-02 TJ = 150C 1.0E-03 30 0.8 Figure 2. Maximum Forward Voltage IR, MAXIMUM REVERSE CURRENT (AMPS) Figure 1. Typical Forward Voltage 1.0E-02 0.6 0.4 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100 110 120 130 140 150 160 170 180 50 45 40 35 SQUARE 30 25 DC 20 15 10 5 0 0 5 10 15 20 25 30 35 40 45 TC, CASE TEMPERATURE (C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 50 MBR60H100CT 10000 C, CAPACITANCE (pF) TJ = 25C 1000 100 10 0 20 40 80 60 100 VR, REVERSE VOLTAGE (VOLTS) R(t), TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance 100 D = 0.5 10 0.2 1 0.05 0.1 0.01 0.1 P(pk) t1 0.01 SINGLE PULSE 0.001 0.000001 0.00001 t2 DUTY CYCLE, D = t1/t2 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) R(t), TRANSIENT THERMAL RESISTANCE Figure 8. Thermal Response Junction-to-Ambient 10 1 0.1 D = 0.5 0.2 0.1 0.05 0.01 0.01 P(pk) t1 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.001 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 t1, TIME (sec) Figure 9. Thermal Response Junction-to-Case http://onsemi.com 4 10 100 1000 MBR60H100CT +VDD IL 10 mH COIL BVDUT VD MERCURY SWITCH S1 ID ID IL DUT VDD t0 Figure 10. Test Circuit t1 t2 t Figure 11. Current-Voltage Waveforms elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). The unclamped inductive switching circuit shown in Figure 10 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive EQUATION (1): BV 2 DUT W [ 1 LI LPK AVAL 2 BV -V DUT DD EQUATION (2): 2 W [ 1 LI LPK AVAL 2 http://onsemi.com 5 MBR60H100CT PACKAGE DIMENSIONS TO-220 PLASTIC CASE 221A-09 ISSUE AA -T- B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. 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