IRF7105
HEXFET® Power MOSFET
07/18/03
lAdvanced Process Technology
lUltra Low On-Resistance
lDual N and P Channel Mosfet
lSurface Mount
lAvailable in Tape & Reel
lDynamic dv/dt Rating
lFast Switching
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques. Power dissipation of greater than 0.8W
is possible in a typical PCB mount application.
SO-8
Description
Max.
N-Channel P-Channel
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 3.5 -2.3
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.8 -1.8
IDM Pulsed Drain Current 14 -10
PD @TC = 25°C Power Dissipation 2.0
Linear Derating Factor 0.016 W/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 3.0 -3.0 V/nS
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Parameter Units
A
Absolute Maximum Ratings
W
Parameter Min. Typ. Max. Units
RθJA Maximum Junction-to-Ambient 62.5 °C/W
Thermal Resistance Ratings
N-Ch P-Ch
VDSS 25V -25V
RDS(on) 0.10Ω0.25Ω
ID3.5A -2.3A
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
45
6
7
P-CHANNEL MOSFET
N-CHANNEL MOSFET
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PD - 91097E
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V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient
RDS(ON) Static Drain-to-Source On-Resistance
VGS(th) Gate Threshold Voltage
gfs Forward Transconductance
IDSS Drain-to-Source Leakage Current
QgTotal GateCharge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on) Turn-On Delay Time
trRise Time
td(off) Turn-Off Delay Time
tfFall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Parameter Min. Typ. Max. Units Conditions
N-Ch 25 VGS = 0V, ID = 250µA
P-Ch -25 VGS = 0V, ID = -250µA
N-Ch 0.030 Reference to 25°C, ID = 1mA
P-Ch -0.015 Reference to 25°C, ID = -1mA
0.083 0.10 VGS = 10V, ID = 1.0A
0.14 0.16 VGS = 4.5V, ID = 0.50A
0.16 0.25 VGS = -10V, ID = -1.0A
0.30 0.40 VGS = -4.5V, ID = -0.50A
N-Ch 1.0 3.0 VDS = VGS, ID = 250µA
P-Ch -1.0 -3.0 VDS = VGS, ID = -250µA
N-Ch 4.3 VDS = 15V, ID = 3.5A
P-Ch 3.1 VDS = -15V, ID = -3.5A
N-Ch 2.0 VDS = 20V, VGS = 0V
P-Ch -2.0 VDS = -20V, VGS = 0V,
N-Ch 25 VDS = 20V, VGS = 0V, TJ = 55°C
P-Ch -25 VDS = -20V, VGS = 0V, TJ = 55°C
IGSS Gate-to-Source Forward Leakage N-P ±100 VGS = ± 20V
N-Ch 9.4 27
P-Ch 10 25
N-Ch 1.7
P-Ch 1.9
N-Ch 3.1
P-Ch 2.8
N-Ch 7.0 20
P-Ch 12 40
N-Ch 9.0 20
P-Ch 13 40
N-Ch 45 90
P-Ch 45 90
N-Ch 25 50
P-Ch 37 50
LDInternal Drain Inductace N-P 4.0 Between lead , 6mm (0.25in.)from
LSInternal Source Inductance N-P 6.0 package and center of die contact
N-Ch 330
P-Ch 290
N-Ch 250
P-Ch 210
N-Ch 61
P-Ch 67
Parameter Min. Typ. Max. Units Conditions
N-Ch 2.0
P-Ch -2.0
N-Ch 14
P-Ch -9.2
N-Ch 1.2 TJ = 25°C, IS = 1.3A, VGS = 0V
P-Ch -1.2 TJ = 25°C, IS = -1.3A, VGS = 0V
N-Ch 36 54
P-Ch 69 100
N-Ch 41 75
P-Ch 90 180
ton Forward Turn-On Time N-P
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Notes:
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Source-Drain Ratings and Characteristics
V
V/°C
Ω
V
S
µA
nC
ns
nH
pF
N-Channel
ID = 2.3A, VDS = 12.5V, VGS = 10V
P-Channel
ID = -2.3A, VDS = -12.5V, VGS = -10V
N-Channel
VDD = 25V, ID = 1.0A, RG = 6.0Ω,
RD = 25Ω
P-Channel
VDD = -25V, ID = -1.0A, RG = 6.0Ω,
RD = 25Ω
N-Channel
VGS = 0V, VDS = 15V, = 1.0MHz
P-Channel
VGS = 0V, VDS = -15V, = 1.0MHz
N-Ch
P-Ch
ISContinuous Source Current (Body Diode)
ISM Pulsed Source Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
A
V
ns
nC
N-Channel
TJ = 25°C, IF = 1.3A, di/dt = 100A/µs
P-Channel
TJ = 25°C, IF = -1.3A, di/dt = 100A/µs
Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
N-Channel I SD ≤ 3.5A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel I SD ≤ -2.3A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Surface mounted on FR-4 board, t ≤ 10sec.
IRF7105
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Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 3. Typical Transfer Characteristics
N-Channel
ID , Drain-to-Source Current ( A )
ID , Drain-to-Source Current ( A )
RDS (on) , Drain-to-Source On Resistance
( Normalized)
ID , Drain-to-Source Current ( A )
C , Capacitance ( pF )
VGS , Gate-to-Source Voltage ( V )
VDS , Drain-to-Source Voltage ( V ) VDS , Drain-to-Source Voltage ( V )
VGS , Gate-to-Source Voltage ( V ) TJ , Junction Temperature ( °C )
VDS , Drain-to-Source Voltage ( V ) QG , Total Gate Charge ( nC )
IRF7105
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Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 11a. Gate Charge Test Circuit
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
VDS
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
+
-
VDS
90%
10%
VGS t
d(on)
t
r
t
d(off)
t
f
VDD
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
Q
G
Q
GS
Q
GD
V
G
Charge
Fig 11b. Basic Gate Charge Waveform
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10V
N-Channel
ISD , Reverse Drain Current ( A )
ID , Drain Current ( A )
ID , Drain Current ( A )
VSD , Source-to-Drain Voltage ( V ) VDS , Drain-to-Source Voltage ( V )
TA , Ambient Temperature ( °C )
IRF7105
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Fig 12. Typical Output Characteristics Fig 13. Typical Output Characteristics
Fig 16. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 17. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 15. Normalized On-Resistance
Vs. Temperature
Fig 14. Typical Transfer Characteristics
P-Channel
-ID , Drain-to-Source Current ( A )
RDS (on) , Drain-to-Source On Resistance
( Normalized)
-ID , Drain-to-Source Current ( A )
C , Capacitance ( pF )
-VGS , Gate-to-Source Voltage ( V )
-ID , Drain-to-Source Current ( A )
-VDS , Drain-to-Source Voltage ( V ) -VDS , Drain-to-Source Voltage ( V )
-VGS , Gate-to-Source Voltage ( V ) TJ , Junction Temperature ( °C )
-VDS , Drain-to-Source Voltage ( V ) QG , Total Gate Charge ( nC )
IRF7105
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+
-
Fig 18. Typical Source-Drain Diode
Forward Voltage
Fig 19. Maximum Safe Operating Area
Fig 22a. Gate Charge Test Circuit
Fig 20. Maximum Drain Current Vs.
Ambient Temperature
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
D.U.T.
VDS
90%
10%
VGS t
d(on)
t
r
t
d(off)
t
f
Fig 21b. Switching Time Waveforms
Fig 21a. Switching Time Test Circuit
Q
G
Q
GS
Q
GD
V
G
Charge
Fig 22b. Basic Gate Charge Waveform
RG
VGS
VDS
RD
VDD
-10V
D.U.T. VDS
ID
IG
-3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
-10V
P-Channel
VSD , Source-to-Drain Voltage ( V ) VDS , Drain-to-Source Voltage ( V )
TA , Ambient Temperature ( °C )
-ISD , Reverse Drain Current ( A )
-ID , Drain Current ( A )
-ID , Drain Current ( A )
IRF7105
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Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
N & P-Channel
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. D u ty fa cto r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , R ectangul ar Puls e Duration (se c)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF7105
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P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
RG
VDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
*
VGS*
**
Peak Diode Recovery dv/dt Test Circuit
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 24. For N and P Channel HEXFETS
IRF7105
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SO-8 Package Details
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
K x 45°
C
8X
L
8X
θ
H
0.25 (.010) M A M
A
0.10 (.004)
B 8 X
0.25 (.010) M C A S B S
- C -
6X
e
- B -
D
E
- A -
8 7 6 5
1 2 3 4
5
6
5
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
1.78 (.070)
8X
6.46 ( .255 )
1.27 ( .050 )
3 X
DIM INCHES MILLIMETERS
MIN MAX MIN MAX
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .009 8 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .050 BASI C 1.27 BASIC
e1 .025 BASI C 0.635 BASIC
H .2284 .244 0 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27
θ
0° 8° 0° 8°
NOTES:
1. DIMENS IONING AND TOLERANCI NG PER ANSI Y14.5M-19 82 .
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIM ETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS- 012AA.
DIMENSION DOE S NOT INCLUDE MOLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGT H OF LEAD FOR SOLD ERING TO A SUBSTRATE..
5
6
A1
e1
θ
IRF7105
10 www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/03
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIME NSIO N : MILLIME TER.
2. OUT L INE CO N F ORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TER MINAL NUM BER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTRO LLING DIMENSI ON : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(I NCHES).
3. OUTLINE C ONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
