Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1400, 2SK1400A
Silicon N Channel MOS FET REJ03G0940-0200
(Previous : AD E-208- 1 280)
Rev.2.00
Sep 07, 2005
Application
High speed power swit ching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
1. Gate
2. Drain
(Flange
)
3. Source
123
D
G
S
2SK1400, 2SK1400A
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
2SK1400 300 Drain to source voltage 2SK1400A VDSS 350 V
Gate to source voltage VGSS ±30 V
Drain current ID 7 A
Drain peak current ID(pulse)*1 28 A
Body to drain diode reverse drain current IDR 7 A
Channel dissipation Pch*2 50 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
2SK1400 300 — — Drain to source
breakdown voltage 2SK1400A V(BR)DSS 350 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0
2SK1400 VDS = 240 V, VGS = 0 Zero gate voltage drain
current 2SK1400A IDSS — — 250 µA VDS = 280 V, VGS = 0
Gate to source cutoff volta ge VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V
2SK1400 — 0.50 0.70 Static drain to source on
state resistance 2SK1400A RDS(on) — 0.60 0.80 Ω I
D = 4 A, VGS = 10 V *3
Forward transfer admittance |yfs| 3.0 5.0 — S ID = 4 A, VDS = 10 V *3
Input capacitan ce Ciss — 635 — pF
Output capacitance Coss — 230 — pF
Reverse transfer capacitance Crss — 40 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 10 — ns
Rise time tr — 50 — ns
Turn-off delay time td(off) — 60 — ns
Fall time tf — 40 — ns
ID = 4 A, VGS = 10 V,
RL = 7.5 Ω
Body to drain diode forward voltage VDF — 1.0 — V IF = 7 A, VGS = 0
Body to drain diode reverse recovery
time trr — 240 — ns IF = 7 A, VGS = 0,
diF/dt = 100 A/µs
Note: 3. Pulse test
2SK1400, 2SK1400A
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
60
40
20
0 50 100 150
Case Temperature TC (°C)
Power vs. Temperature Derating
Channel Dissipation Pch (W)
50
5
0.2
0.05
10 100 1,000
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Maximum Safe Operation Area
20
1
0.1
1 3 30 300
Ta = 25°C
10 µs
100 µs
DC Operation (T
C
= 25
°
C)
1 ms
PW = 10 ms (1 Shot)
0.5
2
10
2SK1400
2SK1400A
Operation in this area
is limited by R
DS (on)
10
820
Drain to Source Voltage VDS (V)
Typical Output Characteristics
8
2
41216
Pulse Test
0
4
6
4.5 V
V
GS
= 3.5 V
15 V
Drain Current ID (A)
10 V
6 V
5.5 V
5 V
4 V
10
410
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Typical Transfer Characteristics
8
2
26
8
–25°C
0
4
6
V
DS
= 20 V
Pulse Test
75°C
Ta
= 25°C
10
820
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage VDS (on) (V)
8
2
412160
4
6
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5 A
I
D
= 10 A
Pulse Test
2 A
5
250
Drain Current ID (A)
Static Drain to Source on State Resistance
RDS (on) (Ω)
2
0.1
1.0 5 200.5
0.5
1
Static Drain to Source on State
Resistance vs. Drain Current
0.2
0.05
10
15 V
Pulse Test
V
GS
= 10 V
2SK1400, 2SK1400A
Rev.2.00 Sep 07, 2005 page 4 of 6
2.0
40 160
Case Temperature TC (°C)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
1.6
0.4
080120
0
0.8
1.2
Static Drain to Source on State
Resistance vs. Temperature
Pulse Test
V
GS
= 10 V
–40
10 A
5 A
2 A
50
0.2 10
Drain Current ID (A)
Forward Transfer Admittance y
fs
(S)
20
2
0.1 0.5 2
0.5
5
10
Forward Transfer Admittance
vs. Drain Current
V
DS
= 20 V
Pulse Test
1
15
75°C
–25°C
T
C
= 25°C
500
0.2 5
Reverse Drain Current IDR (A)
Reverse Recovery Time trr (ns)
200
20
1
5
50
100
Body to Drain Diode Reverse
Recovery Time
di/dt = 50 A/µs, V
GS
= 0
Ta = 25°C
Pulse Test
10
0.5 2 10 20 20 50
Drain to Source Voltage VDS (V)
Capacitance C (pF)
100
10 30 40
Static Drain-Source on State
Resistance vs. Drain Current
0
10
Crss
Coss
Ciss
V
GS
= 0 V
f = 1 MHz
1,000
10,000
500
16 40
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
400
24032
300
200
100
V
DD
= 50 V
V
DS
Dynamic Input Characteristics
V
DD
= 50 V
100 V
20
Gate to Source Voltage V
GS
(V)
16
12
8
4
0
08
200 V
100 V
200 V
V
GS
I
D
= 7 A
500
0.5 10
Drain Current ID (A)
Switching Time t (ns)
200
20
0.2 1 5
5
50
100
0.1
10
2
Switching Characteristics
t
f
t
d (on)
t
d (off)
t
r
V
GS
= 10 V, V
DD
= 30 V
PW = 2 µs, duty ≤ 1 %
2SK1400, 2SK1400A
Rev.2.00 Sep 07, 2005 page 5 of 6
10
2.0
Source to Drain Voltage VSD (V)
Reverse Drain Current IDR (A)
8
0.4 0.8 1.6
0
4
6
0
2
1.2
Pulse Test
5 V, 10 V
V
GS
= 0, –5 V
Reverse Drain Current vs.
Source to Drain Voltage
3
Pulse Width PW (S)
Normalized Transient Thermal Impedance γS (t)
1.0
0.1
0.3
D = 1
10 µ
0.03
0.01
100 µ10 m 100 m 1 101 m
T
C
= 25°C
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot Pulse
Normalized Transient Thermal Impedance vs. Pulse Width
TPW
P
DM
D = T
PW
θch–c (t) = γ
S
(t) • θch–c
θch–c = 2.50°C/W, T
C
= 25°C
Switching Time Test Circuit
Vin Monitor
Vin
10 V
50 Ω
D.U.T
Vout Monitor
R
L
Waveforms
Vin
Vout
t
d (on)
10%
t
r
t
f
10%
90%
10%
90%
t
d (off)
90%
V
DD
= 30 V
2SK1400, 2SK1400A
Rev.2.00 Sep 07, 2005 page 6 of 6
Package Dimensions
0.5 ± 0.1
2.54 ± 0.5
0.76 ± 0.1
14.0 ± 0.5 15.0 ± 0.3
2.79 ± 0.218.5 ± 0.57.8 ± 0.5
10.16 ± 0.2
2.54 ± 0.5
1.26 ± 0.15
4.44 ± 0.2
2.7 Max
1.5 Max
11.5 Max
9.5
8.0
1.27
6.4
+0.2
–0.1
φ 3.6
+0.1
–0.08
Package Name
PRSS0004AC-A TO-220AB / TO-220ABV
MASS[Typ.]
1.8gSC-46
RENESAS CodeJEITA Package Code
Unit: mm
Ordering Information
Part Name Quantity Shipping Container
2SK1400-E 500 pcs Box (Sack)
2SK1400A-E 500 pcs Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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