2SK1400, 2SK1400A Silicon N Channel MOS FET REJ03G0940-0200 (Previous: ADE-208-1280) Rev.2.00 Sep 07, 2005 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2 1. Gate 2. Drain (Flange) 3. Source S 3 2SK1400, 2SK1400A Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Symbol VDSS Ratings 300 Unit V VGSS 350 30 V ID(pulse)* 7 28 A A Body to drain diode reverse drain current Channel dissipation IDR 2 Pch* 7 50 A W Channel temperature Storage temperature Tch Tstg 150 -55 to +150 C C 2SK1400 2SK1400A Gate to source voltage Drain current Drain peak current ID 1 Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit V(BR)DSS 300 350 -- -- -- -- V ID = 10 mA, VGS = 0 V(BR)GSS IGSS 30 -- -- -- -- 10 V A IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 Zero gate voltage drain 2SK1400 current 2SK1400A IDSS -- -- 250 A VDS = 240 V, VGS = 0 VDS = 280 V, VGS = 0 Gate to source cutoff voltage Static drain to source on 2SK1400 state resistance 2SK1400A VGS(off) RDS(on) 2.0 -- -- 0.50 3.0 0.70 V ID = 1 mA, VDS = 10 V 3 ID = 4 A, VGS = 10 V * |yfs| -- 3.0 0.60 5.0 0.80 -- S ID = 4 A, VDS = 10 V * Input capacitance Output capacitance Ciss Coss -- -- 635 230 -- -- pF pF VDS = 10 V, VGS = 0, f = 1 MHz Reverse transfer capacitance Turn-on delay time Crss td(on) -- -- 40 10 -- -- pF ns tr 50 60 -- -- ns ns Drain to source breakdown voltage 2SK1400 2SK1400A Gate to source breakdown voltage Gate to source leak current Forward transfer admittance Rise time Turn-off delay time td(off) -- -- Fall time Body to drain diode forward voltage tf VDF -- -- 40 1.0 -- -- ns V trr -- 240 -- ns Body to drain diode reverse recovery time Note: 3. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 6 Test conditions 3 ID = 4 A, VGS = 10 V, RL = 7.5 IF = 7 A, VGS = 0 IF = 7 A, VGS = 0, diF/dt = 100 A/s 2SK1400, 2SK1400A Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating Drain Current ID (A) 16 n) (o DS O is per lim ati ite on d in b y th R is 10 3 8 ) 100 30 300 1,000 VDS = 20 V Pulse Test 6 4 75C 2 Ta = 25C -25C 2 0 20 6 4 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current Pulse Test 8 ID = 10 A 6 4 5A 2 2A 4 8 12 16 Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 6 20 Static Drain to Source on State Resistance RDS (on) () Drain Current ID (A) ot ) Drain to Source Saturation Voltage VDS (on) (V) Sh C 12 10 0 (1 25 Pulse Test 4V VGS = 3.5 V 8 s Typical Transfer Characteristics 4.5 V 4 s Drain to Source Voltage VDS (V) 5V 0 s 2SK1400 2SK1400A Ta = 25C 1 150 6 2 0 10 5.5 V 6V 10 V 4 s = (T C 8 10 m 0.2 Typical Output Characteristics 15 V m n 0.5 Case Temperature TC (C) 10 10 tio 100 1 ra 1 0.05 50 = pe 2 0.1 0 PW O 20 5 C Drain Current ID (A) 40 10 10 D Channel Dissipation Pch (W) 20 ar ea 50 60 5 Pulse Test 2 VGS = 10 V 1 15 V 0.5 0.2 0.1 0.05 0.5 1.0 2 5 10 20 Drain Current ID (A) 50 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance vs. Temperature 2.0 1.6 Pulse Test VGS = 10 V 10 A 1.2 5A 2A 0.8 0.4 0 -40 0 80 40 120 160 20 10 -25C TC = 25C 5 75C 2 1 0.5 0.1 0.2 0.5 1 5 2 Body to Drain Diode Reverse Recovery Time Static Drain-Source on State Resistance vs. Drain Current 10 10,000 Ciss Capacitance C (pF) 200 100 50 20 10 5 0.2 di/dt = 50 A/s, VGS = 0 Ta = 25C Pulse Test 100 Crss 2 1 10 5 0 20 20 10 30 50 40 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 VDD = 50 V 100 V 200 V 400 300 16 12 VGS VDS 8 100 0 Coss 10 0.5 500 200 1,000 VGS = 0 V f = 1 MHz ID = 7 A 200 V 100 V VDD = 50 V 8 16 0 24 32 Gate Charge Qg (nc) Rev.2.00 Sep 07, 2005 page 4 of 6 4 40 Gate to Source Voltage VGS (V) Reverse Recovery Time t rr (ns) VDS = 20 V Pulse Test Drain Current ID (A) 500 Drain to Source Voltage VDS (V) 50 Case Temperature TC (C) 500 VGS = 10 V, VDD = 30 V PW = 2 s, duty 1 % Switching Time t (ns) Static Drain to Source on State Resistance RDS (on) () 2SK1400, 2SK1400A 200 100 td (off) 50 tf tr 20 td (on) 10 5 0.1 0.2 0.5 1 2 Drain Current ID (A) 5 10 2SK1400, 2SK1400A Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 10 Pulse Test 8 6 4 2 5 V, 10 V VGS = 0, -5 V 0 0 0.4 0.8 1.2 1.6 2.0 Normalized Transient Thermal Impedance S (t) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 TC = 25C D=1 0.5 0.3 0.2 0.1 0.1 0.05 ch-c (t) = S (t) * ch-c ch-c = 2.50C/W, TC = 25C PDM 0.02 0.03 e 1 0.0 t Puls o h 1S 0.01 10 T 100 1m 10 m 100 m PW D = PW T 1 10 Pulse Width PW (S) Waveforms Switching Time Test Circuit Vin Monitor 90% Vout Monitor Vin D.U.T RL 50 Vin 10 V Rev.2.00 Sep 07, 2005 page 5 of 6 VDD = 30 V Vout 10% 10% 90% td (on) tr 10% 90% td (off) tf 2SK1400, 2SK1400A Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-46 PRSS0004AC-A TO-220AB / TO-220ABV 1.8g Unit: mm 2.79 0.2 11.5 Max 10.16 0.2 9.5 3.6 1.26 0.15 15.0 0.3 18.5 0.5 1.27 6.4 +0.2 -0.1 8.0 4.44 0.2 +0.1 -0.08 7.8 0.5 0.76 0.1 14.0 0.5 2.7 Max 1.5 Max 0.5 0.1 2.54 0.5 2.54 0.5 Ordering Information Part Name 2SK1400-E 2SK1400A-E Quantity 500 pcs 500 pcs Shipping Container Box (Sack) Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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