ON Semiconductor PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general-purpose amplifier and switching applications. *ON Semiconductor Preferred Device * DC Current Gain Specified to 10 Amperes * High Current Gain -- Bandwidth Product -- fT = 2.0 MHz (Min) @ IC = 500 mAdc IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol Value Unit VCEO 60 Vdc Collector-Base Voltage VCB 70 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current IC 10 Adc Base Current IB 6.0 Adc PD 75 Watts 0.6 W/C -55 to +150 C Total Power Dissipation @ TC = 25C Derate above 25C MJE3055T, MJE2955T Operating and Storage Junction Temperature Range TJ, Tstg THERMAL CHARACTERISTICS Characteristic Symbol Max Unit JC 1.67 C/W Thermal Resistance, Junction to Case 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS 4 1 2 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR 3 CASE 221A-09 TO-220AB Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed. IC, COLLECTOR CURRENT (AMP) 10 7.0 5.0 5.0 ms 1.0ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on T J(pk) = 150C. TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. (See AN415A) 100s dc 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 5.0 TJ = 150C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED TC = 25C (D = 0.1) 20 30 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 50 60 Figure 1. Active-Region Safe Operating Area Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2002 April, 2002- Rev. 4 1 Publication Order Number: MJE2955T/D MJE2955T MJE3055T IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) ICEO 60 -- Vdc -- 700 OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) Collector Cutoff Current (VCE = 30 Vdc, IB = 0) Collector Cutoff Current (VCE = 70 Vdc, VEB(off) = 1.5 Vdc) (VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150C) ICEX Collector Cutoff Current (VCB = 70 Vdc, IE = 0) (VCB = 70 Vdc, IE = 0, TC = 150C) ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO Adc mAdc -- -- 1.0 5.0 -- -- 1.0 10 -- 5.0 20 5.0 100 -- -- -- 1.1 8.0 mAdc mAdc ON CHARACTERISTICS DC Current Gain (1) (IC = 4.0 Adc, VCE = 4 0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (1) (IC = 4.0 Adc, IB = 0.4 Adc) (IC = 10 Adc, IB = 3.3 Adc) VCE(sat) Vdc Base-Emitter On Voltage (1) (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) -- 1.8 Vdc fT 2.0 -- MHz DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 20%. http://onsemi.com 2 MJE2955T MJE3055T 90 500 TJ = 150C 100 VCE = 2.0 V PD, POWER DISSIPATION (WATTS) hFE, DC CURRENT GAIN 300 200 25C 50 -55C 30 20 10 5.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 80 70 60 50 30 20 10 0 10 MJE3055T MJE2955T 40 0 25 50 75 100 125 TC, CASE TEMPERATURE (C) Figure 2. DC Current Gain MJE2955T 1.2 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) TJ = 25C VBE(sat) @ IC/IB = 10 VBE @ VCE = 3.0 V 0.4 0 0.1 5.0 10 MJE3055T 1.4 1.2 0.8 175 Figure 3. Power Derating 2.0 1.6 150 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 1.0 0.8 5.0 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 TJ = 25C VCE(sat) @ IC/IB = 10 0 0.1 10 Figure 4. "On" Voltages http://onsemi.com 3 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) MJE2955T MJE3055T PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA -T- B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V J G D N STYLE 1: PIN 1. 2. 3. 4. NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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