TIP100 - ON Semiconductor - Datasheet.Company

November, 2014 − Rev. 14

1Publication Order Number:

TIP100/D

TIP100, TIP101, TIP102

(NPN); TIP105, TIP106,

TIP107 (PNP)

Plastic Medium-Power

Complementary Silicon

Transistors

Designed for general−purpose amplifier and low−speed switching

applications.

Features

•High DC Current Gain −

hFE = 2500 (Typ) @ IC

= 4.0 Adc

•Collector−Emitter Sustaining Voltage − @ 30 mAdc

VCEO(sus) = 60 Vdc (Min) − TIP100, TIP105

= 80 Vdc (Min) − TIP101, TIP106

= 100 Vdc (Min) − TIP102, TIP107

•Low Collector−Emitter Saturation Voltage −

VCE(sat) = 2.0 Vdc (Max) @ IC

= 3.0 Adc

= 2.5 Vdc (Max) @ IC = 8.0 Adc

•Monolithic Construction with Built−in Base−Emitter Shunt Resistors

•Pb−Free Packages are Available*

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−220AB

CASE 221A

STYLE 1

MARKING

DIAGRAM

DARLINGTON 8 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60−80−100 VOLTS, 80 WATTS

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123

TIP10x = Device Code

x = 0, 1, 2, 5, 6, or 7

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

TIP10xG

AYWW

See detailed ordering and shipping information on page 3 of

this data sheet.

ORDERING INFORMATION

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)

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MAXIMUM RATINGS

Rating Symbol

TIP100,

TIP105

TIP101,

TIP106

TIP102,

TIP107 Unit

Collector − Emitter Voltage VCEO 60 80 100 Vdc

Collector − Base Voltage VCB 60 80 100 Vdc

Emitter − Base Voltage VEB 5.0 Vdc

Collector Current −Continuous

−Peak

IC8.0

15 Adc

Base Current IB1.0 Adc

Total Power Dissipation @ TC = 25°C

Derate above 25°C

PD80

0.64

W/°C

Unclamped Inductive Load Energy (1) E 30 mJ

Total Power Dissipation @ TA = 25°C

Derate above 25°C

PD2.0

0.016

W/°C

Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 1.56 °C/W

Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. IC = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0) TIP100, TIP105

TIP101, TIP106

TIP102, TIP107

VCEO(sus)

100

−

Vdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0) TIP100, TIP105

(VCE = 40 Vdc, IB = 0) TIP101, TIP106

(VCE = 50 Vdc, IB = 0) TIP102, TIP107

ICEO

−

mAdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0) TIP100, TIP105

(VCB = 80 Vdc, IE = 0) TIP101, TIP106

(VCB = 100 Vdc, IE = 0) TIP102, TIP107

ICBO

−

mAdc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO −8.0 mAdc

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 3.0 Adc, VCE = 4.0 Vdc)

(IC = 8.0 Adc, VCE = 4.0 Vdc)

hFE

1000

200

20,000

−

Collector−Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 6.0 mAdc)

(IC = 8.0 Adc, IB = 80 mAdc)

VCE(sat)

−

2.0

2.5

Vdc

Base−Emitter On Voltage (IC = 8.0 Adc, VCE = 4.0 Vdc) VBE(on) −2.8 Vdc

DYNAMIC CHARACTERISTICS

Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) hfe 4.0 − −

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) TIP105, TIP106, TIP107

TIP100, TIP101, TIP102

Cob −

−

300

200

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)

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Figure 1. Darlington Circuit Schematic

BASE

EMITTER

COLLECTOR

≈8.0 k ≈120

BASE

EMITTER

COLLECTOR

≈8.0 k ≈120

ORDERING INFORMATION

Device Package Shipping

TIP100 TO−220 50 Units / Rail

TIP100G TO−220

(Pb−Free)

50 Units / Rail

TIP101 TO−220 50 Units / Rail

TIP101G TO−220

(Pb−Free)

50 Units / Rail

TIP102 TO−220 50 Units / Rail

TIP102G TO−220

(Pb−Free)

50 Units / Rail

TIP105 TO−220 50 Units / Rail

TIP105G TO−220

(Pb−Free)

50 Units / Rail

TIP106 TO−220 50 Units / Rail

TIP106G TO−220

(Pb−Free)

50 Units / Rail

TIP107 TO−220 50 Units / Rail

TIP107G TO−220

(Pb−Free)

50 Units / Rail

0 20 40 60 80 100 120 160

Figure 2. Power Derating

T, TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

140

4.0

2.0

1.0

3.0

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)

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Figure 3. Switching Times Test Circuit

5.0

0.1

Figure 4. Switching Times

IC, COLLECTOR CURRENT (AMP)

t, TIME (s)μ

2.0

1.0

0.5

0.05 0.2 0.3 0.5 0.7 1.0 2.0 3.0 10

0.3

0.7

PNP

NPN

td @ VBE(off) = 0 V

approx

+8.0 V

approx

-12 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

25 ms

51 D1

+4.0 V

VCC

-30 V

TUT

≈ 8.0 k ≈ 120

SCOPE

for td and tr, D1 is disconnected

and V2 = 0

For NPN test circuit reverse all polarities.

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25°C

3.0

0.2

0.1

0.07

5.0 7.0

Figure 5. Thermal Response

t, TIME (ms)

1.0

0.01

0.5

0.2

0.1

0.05

0.02

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500

ZqJC(t) = r(t) RqJC

RqJC = 1.56°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) ZqJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01 SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02

1.0

Figure 6. Active−Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0

2.0

1.0

0.02 2.0 5.0 20 50 100

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25°C

0.5

IC, COLLECTOR CURRENT (mA)

TJ = 150°Cd

1ms

100 ms

0.2

0.1

TIP100, TIP105

TIP101, TIP106

TIP102, TIP107

0.05

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW RATED VCEO

5ms

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 6 is based on TJ(pk) = 150°C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

< 150°C. TJ(pk) may be calculated from the data in Figure 5.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)

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300

0.1

VR, REVERSE VOLTAGE (VOLTS)

2.0 5.0 10 20 100500.2 0.5 1.0

C, CAPACITANCE (pF)

100

TJ = 25°C

Cib

Cob

PNP

NPN

Figure 7. Small−Signal Current Gain

10,000

1.0

f, FREQUENCY (kHz)

10 20 50 100 200 10002.0 5.0 10

3000

500

100

TC = 25°C

VCE = 4.0 Vdc

IC = 3.0 Adc

1000

PNP

NPN

Figure 8. Capacitance

500

hfe , SMALL-SIGNAL CURRENT GAIN

5000

2000

300

200

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)

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VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

20,000

0.1

Figure 9. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

200 0.2 0.3 0.5 1.0 2.0 10

500

1000

300

hFE, DC CURRENT GAIN

2000

3000

VCE = 4.0 V

0.7 3.0

NPN

TIP100, TIP101, TIP102

PNP

TIP105, TIP106, TIP107

Figure 10. Collector Saturation Region

3.0

0.3

IB, BASE CURRENT (mA)

1.0 0.5 1.0 2.0 10 30

1.8

IC = 2.0 A

TJ = 25°C

4.0 A

2.2

2.6

0.7 5.0

3.0

0.1

IC, COLLECTOR CURRENT (AMP)

0.2 0.3 0.5 1.0 2.0 5.0 10

2.5

2.0

1.5

1.0

0.5

TJ = 25°C

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

V, VOLTAGE (VOLTS)

Figure 11. “On” Voltages

VBE @ VCE = 4.0 V

3.0

10,000

5000 TJ = 150°C

25°C

-55°C

IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

VCE = 4.0 V

TJ = 150°C

25°C

-55°C

1.4

6.0 A

IB, BASE CURRENT (mA)

TJ = 25°C

IC, COLLECTOR CURRENT (AMP)

V, VOLTAGE (VOLTS)

TJ = 25°C

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

VBE @ VCE = 4.0 V

5.0 7.0

20,000

0.1

200 0.2 0.3 0.5 1.0 2.0 10

500

1000

300

2000

3000

0.7 3.0

10,000

5000

5.0 7.0

7000

700

3.0 7.0

3.0

0.3

1.0 0.5 1.0 2.0 10 30

1.8

2.2

2.6

0.7 5.0 20

1.4

3.0 7.0

IC = 2.0 A 4.0 A 6.0 A

0.7 7.0

3.0

0.1 0.2 0.3 0.5 1.0 2.0 5.0 10

2.5

2.0

1.5

1.0

0.5 3.00.7 7.0

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)

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PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AH

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.415 9.66 10.53

C0.160 0.190 4.07 4.83

D0.025 0.038 0.64 0.96

F0.142 0.161 3.61 4.09

G0.095 0.105 2.42 2.66

H0.110 0.161 2.80 4.10

J0.014 0.024 0.36 0.61

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

123

SEATING

PLANE

−T−

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

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TIP100/D

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