BD166 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

   

 

. . . designed for use as audio amplifiers and drivers utilizing complementary or quasi

complementary circuits.

•DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc

•BD166 is complementary with BD165

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Value

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎ

VCBO

ÎÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEBO

ÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current

ÎÎÎÎÎ

ÎÎÎÎÎÎ

1.5

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎÎ

ÎÎÎÎÎÎ

0.5

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TA = 25

Derate above 25

ÎÎÎÎÎ

ÎÎÎÎÎÎ

1.25

ÎÎÎ

Watts

mW/

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25

Derate above 25

ÎÎÎÎÎ

ÎÎÎÎÎÎ

160

ÎÎÎ

Watts

mW/

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

θJC

ÎÎÎÎÎÎ

6.25

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎÎ

θJA

ÎÎÎÎÎÎ

100

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎ

Min

ÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage*

(IC = 0.1 Adc, IB = 0)

ÎÎÎÎÎÎ

V(BR)CEO

ÎÎÎÎÎ

—

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 45 Vdc, IE = 0)

ÎÎÎÎÎÎ

ICBO

ÎÎÎÎÎ

—

ÎÎÎÎÎ

0.1

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎÎ

IEBO

ÎÎÎÎÎ

—

ÎÎÎÎÎ

1.0

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 0. 15 A, VCE = 2.0 V)

(IC = 0.5 A, VCE = 2.0 V)

ÎÎÎÎÎÎ

hFE

ÎÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage*

(IC = 0.5 Adc, IB = 0.05 Adc)

ÎÎÎÎÎÎ

VCE(sat)

ÎÎÎÎÎ

—

ÎÎÎÎÎ

0.5

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage*

(IC = 0.5 Adc, VCE = 2.0 Vdc)

ÎÎÎÎÎÎ

VBE(on)

ÎÎÎÎÎ

—

ÎÎÎÎÎ

0.95

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product

(IC = 500 mAdc, VCE = 2.0 Vdc,

f = 1.0 MHz)

ÎÎÎÎÎÎ

ÎÎÎÎÎ

6.0

ÎÎÎÎÎ

—

ÎÎÎÎ

MHz

*Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.



SEMICONDUCTOR TECHNICAL DATA Order this document

by BD166/D

 Motorola, Inc. 1995



1.5 AMPERE

POWER TRANSISTOR

PNP SILICON

45 VOLTS

20 WATTS

CASE 77–08

TO–225AA TYPE

REV 7

BD166

2 Motorola Bipolar Power Transistor Device Data

00 20 40 60 80 100 120 140 160

Figure 1. PD – TC Derating Curve

TC, CASE TEMPERATURE (

PD, POWER DISSIPATION (WATTS)

Figure 2. Safe Operating Area (see Note 1)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0

3.0

2.0

1.0

0.5

0.15.0 7.0 10 20 30 10050

0.3

0.2

IC, COLLECTOR CURRENT (AMP)

PULSE CURVES APPLY BELOW

RATED VCEO

TJ = 150

5.0 ms

100

SECOND BREAKDOWN

LIMITED

BONDING WIRE LIMITED

THERMAL LIMITATION @ TC = 25

1.0 ms

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 3. Collector Saturation Region

IB, BASE CURRENT (mA)

1.2

0.8

0.6

0.4

0.2

5 10 50 100 500 1000

IC = 0.1 A 0.25 A 1 A0.5 A

0.01

Figure 4. Current Gain

IC, COLLECTOR CURRENT (A)

0.1 0.05 0.1 0.5 1

TJ = + 150

C+ 25

C – 25

VCE = 2 V

hFE, DC CURRENT GAIN (NORMALIZED)

Figure 5. “On” Voltage

IC, COLLECTOR CURRENT (mA)

VOLTAGE (VOLTS)

0.5

0.1

0.05

0.01 10 50 100 500 1000

VBE at VCE = 2 VVBE(sat) at IC/IB = 10

TJ = 25

VCE(sat) at IC/IB = 10

Note 1:

There are two limitations on the power handling ability of a

transistor; average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 2 is based on TJ(pk) = 150

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

150

C. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

BD166

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 77–08

TO–225AA TYPE

ISSUE V

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

–B–

–A– M

1 32

2 PL

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.055 1.15 1.39

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 ––– 1.02 –––

_ _

BD166

4 Motorola Bipolar Power Transistor Device Data

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BD166/D

*BD166/D*

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