Order this document by BD166/D SEMICONDUCTOR TECHNICAL DATA 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII x x * DC Current Gain -- hFE = 40 (Min) @ IC = 0.15 Adc * BD166 is complementary with BD165 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCEO 45 Vdc Collector-Base Voltage VCBO 45 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 1.5 Adc Base Current IB 0.5 Adc Total Device Dissipation @ TA = 25_C Derate above 25_C PD 1.25 10 Watts mW/_C Total Device Dissipation @ TC = 25_C Derate above 25_C PD 20 160 Watts mW/_C TJ, Tstg - 65 to + 150 _C Symbol Max Unit Thermal Resistance, Junction to Case JC 6.25 _C/W Thermal Resistance, Junction to Ambient JA 100 _C/W Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic CASE 77-08 TO-225AA TYPE ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CEO 45 -- Vdc Collector Cutoff Current (VCB = 45 Vdc, IE = 0) ICBO -- 0.1 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO -- 1.0 mAdc DC Current Gain (IC = 0. 15 A, VCE = 2.0 V) (IC = 0.5 A, VCE = 2.0 V) hFE 40 15 -- -- Collector-Emitter Sustaining Voltage* (IC = 0.1 Adc, IB = 0) Collector-Emitter Saturation Voltage* (IC = 0.5 Adc, IB = 0.05 Adc) VCE(sat) -- 0.5 Vdc Base-Emitter On Voltage* (IC = 0.5 Adc, VCE = 2.0 Vdc) VBE(on) -- 0.95 Vdc fT 6.0 -- MHz Current-Gain -- Bandwidth Product (IC = 500 mAdc, VCE = 2.0 Vdc, f = 1.0 MHz) * Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 BD166 10 100 s IC, COLLECTOR CURRENT (AMP) PD, POWER DISSIPATION (WATTS) TJ = 150C 25 20 15 10 5 0 0 20 40 60 80 100 120 140 TC, CASE TEMPERATURE (C) 5.0 3.0 2.0 1.0 ms 5.0 ms 1.0 SECOND BREAKDOWN dc LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25C PULSE CURVES APPLY BELOW RATED VCEO 0.5 0.3 0.2 0.1 5.0 160 7.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. PD - TC Derating Curve 10 20 30 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 2. Safe Operating Area (see Note 1) 1.2 1 IC = 0.1 A 0.8 0.25 A 0.5 A 1A 0.6 0.4 0.2 0 5 1 10 50 100 IB, BASE CURRENT (mA) 500 1000 Figure 3. Collector Saturation Region 1 0.5 TJ = + 150C + 25C - 25C VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) 10 1 0.01 0.05 0.1 IC, COLLECTOR CURRENT (A) VBE at VCE = 2 V 0.1 0.05 VCE(sat) at IC/IB = 10 VCE = 2 V 0.1 TJ = 25C 0.5 0.01 1 Figure 4. Current Gain Note 1: There are two limitations on the power handling ability of a transistor; average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 2 VBE(sat) at IC/IB = 10 10 50 100 IC, COLLECTOR CURRENT (mA) 500 1000 Figure 5. "On" Voltage The data of Figure 2 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v Motorola Bipolar Power Transistor Device Data BD166 PACKAGE DIMENSIONS -B- U F Q -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M DIM A B C D F G H J K M Q R S U V 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 --- STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-08 TO-225AA TYPE ISSUE V Motorola Bipolar Power Transistor Device Data 3 BD166 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 4 Motorola Bipolar Power Transistor Device Data *BD166/D* BD166/D