FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
M ECHANICAL DA T A
Case:JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
UNITS
Maximum recurrent peak reverse voltage VRRM V
Max imum RMS v oltage VRMS V
Max imum DC bloc king v oltage VDC V
Maximum average forw ard rectified current
9.5mm lead length, @TA=75
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load @TJ=125
Maximum instantaneous forw ard voltage @ 3.0A
(Note 1) @ 9.4A
Maximum reverse current @TA=25
at rated DC blocking voltage @TA=100
Typical junction capacitance (Note2) CJpF
Typical thermal resistance (Note3) RθJA /W
Operating junction temperature range TJ
Storage temperature range TSTG
GALAXY ELECTRICAL 1N5820--- 1N5822
A
For use in low voltage,high frequency inverters free
xxxx wheeling,and polarity protection applications
IF(AV)
SCHOTTKY BAR RI ER RECTI FIER VOLTAGE RANGE: 20 --- 40 V
CURRE NT: 3. 0 A
DO - 27
The plastic material carries U/L recognition 94V-0
M AXIM UM RAT IN G S A ND EL ECT RICAL CHA RACTERIST IC S
1N5820
3.Thermal resistance junction to ambient
mA
IR
IFSM
NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
A
20
- 55 ---- + 125
- 55 ---- + 150
80.0
250
3.0
20.0
2.0
40
0.525
0.95
0.50
VFV
0.90
0.475
0.85
1N5821 1N5822
40
28
30
21
3020
14
20
www.galaxycn.com
BL
Document Number 0266002 1.
BLGALAXY ELECTRICAL