TC4426 TC4427 TC4428 1.5A DUAL HIGH-SPEED, POWER MOSFET DRIVERS 2 FEATURES GENERAL DESCRIPTION The TC4426/4427/4428 are improved versions of the earlier TC426/427/428 family of buffer/drivers (with which they are pin compatible). They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, up to 500mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 4kV of electrostatic discharge. As MOSFET drivers, the TC4426/4427/4428 can easily switch 1000 pF gate capacitances in under 30nsec, and provide low enough impedances in both the ON and OFF states to ensure the MOSFET's intended state will not be affected, even by large transients. Other compatible drivers are the TC4426A/27A/28A. These drivers have matched input to output leading edge and falling edge delays, tD1 and tD2, for processing short duration pulses in the 25 nanoseconds range. They are pin compatible with the TC4426/27/28. High Peak Output Current ............................... 1.5A Wide Operating Range .......................... 4.5V to 18V High Capacitive Load Drive Capability ........................ 1000 pF in 25 nsec Short Delay Time ................................ <40nsec Typ Consistent Delay Times With Changes in Supply Voltage Low Supply Current -- With Logic "1" Input .................................... 4mA -- With Logic "0" Input ................................. 400A Low Output Impedance ....................................... 7 Latch-Up Protected: Will Withstand >0.5A Reverse Current ................................. Down to - 5V Input Will Withstand Negative Inputs ESD Protected .....................................................4kV Pinout Same as TC426/TC427/TC428 ORDERING INFORMATION Temperature Range Part No. Package TC4426COA TC4426CPA TC4426EOA TC4426EPA TC4426MJA 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP 0C to +70C 0C to +70C - 40C to +85C - 40C to +85C - 55C to +125C TC4427COA TC4427CPA TC4427EOA TC4427EPA TC4427MJA 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP 0C to +70C 0C to +70C - 40C to +85C - 40C to +85C - 55C to +125C TC4428COA TC4428CPA TC4428EOA TC4428EPA TC4428MJA 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP 0C to +70C 0C to +70C - 40C to +85C - 40C to +85C - 55C to +125C 1 3 4 5 FUNCTIONAL BLOCK DIAGRAM VDD INVERTING OUTPUTS 300 mV OUTPUT NONINVERTING OUTPUTS 6 INPUT 4.7V TC4426/TC4427/TC4428 GND EFFECTIVE INPUT C = 12 pF NOTES: 1.TC4426 has 2 inverting drivers; TC4427 has 2 noninverting drivers. 2. TC4428 has one inverting and one noninverting driver. 3. Ground any unused driver input. 7 8 TC4426/7/8-8 TELCOM SEMICONDUCTOR, INC. 10/21/96 4-245 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428 ABSOLUTE MAXIMUM RATINGS* Supply Voltage ......................................................... +22V Input Voltage, IN A or IN B . (VDD + 0.3V) to (GND - 5.0V) Maximum Chip Temperature ................................. +150C Storage Temperature Range ................ - 65C to +150C Lead Temperature (Soldering, 10 sec) ................. +300C Package Thermal Resistance CerDIP RJ-A ................................................ 150C/W CerDIP RJ-C .................................................. 50C/W PDIP RJ-A ................................................... 125C/W PDIP RJ-C ..................................................... 42C/W SOIC RJ-A ................................................... 155C/W SOIC RJ-C ..................................................... 45C/W PIN CONFIGURATIONS NC 1 8 NC IN A 2 TC4426 GND 3 IN B 4 2,4 IN A 2 6 VDD GND 3 5 OUT B IN B 4 INVERTING *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NC 1 7 OUT A 7,5 Operating Temperature Range C Version ............................................... 0C to +70C E Version .......................................... - 40C to +85C M Version ....................................... - 55C to +125C Package Power Dissipation (TA 70C) Plastic .............................................................730mW CerDIP ............................................................800mW SOIC ...............................................................470mW 8 NC TC4427 2,4 8 NC NC 1 7 OUT A IN A 2 6 VDD GND 3 5 OUT B IN B 4 7 OUT A TC4428 6 VDD 5 OUT B 2 7 4 5 7,5 NONINVERTING DIFFERENTIAL NC = NO INTERNAL CONNECTION NOTE: SOIC pinout is identical to DIP. ELECTRICAL CHARACTERISTICS: TA = +25C with 4.5V VDD 18V, unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit 0V VIN VDD 2.4 -- -1 -- -- -- -- 0.8 1 V V A VDD - 0.025 -- -- -- > 0.5 -- -- 7 1.5 -- -- 0.025 10 -- -- V V A A Input VIH VIL IIN Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current Output VOH VOL RO IPK IREV High Output Voltage Low Output Voltage Output Resistance Peak Output Current Latch-Up Protection Withstand Reverse Current VDD = 18V, IO = 10 mA Duty Cycle 2%, t 30 sec Duty Cycle 2% t 30 sec Switching Time (Note 1) tR tF tD1 tD2 Rise Time Fall Time Delay Time Delay Time Figure 1 Figure 1 Figure 1 Figure 1 -- -- -- -- 19 19 20 40 30 30 30 50 nsec nsec nsec nsec Power Supply Current VIN = 3V (Both Inputs) VIN = 0V (Both Inputs) -- -- -- -- 4.5 0.4 mA mA Power Supply IS NOTE: 1. Switching times are guaranteed by design. 4-246 TELCOM SEMICONDUCTOR, INC. 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428 1 ELECTRICAL CHARACTERISTICS (CONT.): Specifications measured over operating temperature range with 4.5V VDD 18V, unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit 0V VIN VDD 2.4 -- - 10 -- -- -- -- 0.8 10 V V A VDD - 0.025 -- -- -- > 0.5 -- -- 9 1.5 -- -- 0.025 12 -- -- V V A A 2 Input VIH VIL IIN Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current Output VOH VOL RO IPK IREV High Output Voltage Low Output Voltage Output Resistance Peak Output Current Latch-Up Protection Withstand Reverse Current VDD = 18V, IO = 10 mA Duty Cycle 2%, t 300sec Duty Cycle 2% t 300sec 3 Switching Time (Note 1) tR tF tD1 tD2 Rise Time Fall Time Delay Time Delay Time Figure 1 Figure 1 Figure 1 Figure 1 -- -- -- -- -- -- -- -- 40 40 40 60 nsec nsec nsec nsec Power Supply Current VIN = 3V (Both Inputs) VIN = 0V (Both Inputs) -- -- -- -- 8 0.6 mA 4 Power Supply IS NOTE: 1. Switching times are guaranteed by design. 5 Crossover Energy Loss -8 10 +5V 9 8 7 6 0V 10% tD1 VDD= 18V 5 A * sec 90% INPUT 4 4.7 F 0.1 F VDD tD2 tF tR 90% 90% OUTPUT 6 6 3 INPUT 5,7 2,4 Inverting Driver CL = 1000 pF 2 10% 10% 0V OUTPUT +5V 90% INPUT -9 10 4 6 8 10 12 VDD 14 16 3 18 INPUT: 100 kHz, square wave, tRISE = tFALL 10ns Thermal Derating Curves 1600 8 Pin DIP 10% tD1 90% tR OUTPUT 0V 1400 MAX. POWER (mW) 0V VDD 10% 90% tD2 tF 10% Noninverting Driver 7 1200 8 Pin CerDIP 1000 800 8 Pin SOIC Figure 1. Switching Time Test Circuit 600 400 200 0 0 10 20 30 40 50 60 70 80 90 100 110 120 NOTE: The values on this graph represent the loss seen by both drivers in a package during one complete cycle. For a single driver, divide the stated values by 2. For a single transition of a single driver, divide the stated value by 4. AMBIENT TEMPERATURE (C) TELCOM SEMICONDUCTOR, INC. 4-247 8 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428 TYPICAL CHARACTERISTICS Rise Time vs. Supply Voltage Fall Time vs. Supply Voltage 100 100 2200 pF TA = 25C 80 1500 pF tFALL (nsec) tRISE (nsec) 80 2200 pF TA = 25C 60 1000 pF 40 1500 pF 60 1000 pF 40 470 pF 470 pF 20 20 100 pF 100 pF 0 0 4 6 8 10 14 12 16 18 4 6 8 10 VDD 5V 80 tFALL (nsec) tRISE (nsec) 18 5V TA = 25C 80 10V 60 15V 40 60 10V 15V 40 20 20 0 100 1000 0 100 10,000 1000 CLOAD (pF) CLOAD (pF) Rise and Fall Times vs. Temperature 10,000 Propagation Delay vs. Supply Voltage 60 60 C LOAD = 1000 pF 50 40 30 tFALL 20 10 -55 -35 -15 CLOAD = 1000 pF t D2 VDD = 17.5V DELAY TIME (nsec) TIME (nsec) 16 100 TA = 25C 4-248 14 Fall TIme vs. Capacitive Load Rise TIme vs. Capacitive Load 100 50 12 VDD TA = 25C 40 tD1 30 20 tRISE 10 5 25 45 65 85 TEMPERATURE (C) 105 125 4 6 8 10 12 VDD 14 16 18 TELCOM SEMICONDUCTOR, INC. 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428 1 TYPICAL CHARACTERISTICS (Cont.) Effect of Input Amplitude on Delay Time 60 VDD = 18V VLOAD= 1000 pF C LOAD = 1000 pF VDD = 10V 50 DELAY TIME (nsec) 50 DELAY TIME (nsec) 2 Propagation Delay Time vs. Temperature 60 40 t D2 30 t D1 20 2 40 3 t D1 30 20 10 0 t D2 4 6 VDRIVE (V) 8 10 -55 -35 -15 10 Quiescent Supply Current vs. Voltage 5 25 45 TA (C) 65 85 105 125 4 Quiescent Supply Current vs. Temperature 4.0 V DD = 18V IQUIESCENT (mA) IQUIESCENT (mA) TA = +25C BOTH INPUTS = 1 1 3.5 3.0 5 BOTH INPUTS = 1 2.5 BOTH INPUTS = 0 0.1 4 6 8 10 12 VDD 14 16 2.0 -55 -35 -15 18 High-State Output Resistance 25 45 TA (C) 65 85 6 105 125 Low-State Output Resistance 25 25 20 20 WORST CASE @ TJ = +150C RDS(ON) () RDS(ON) () 5 15 TYP @ TA = +25C 10 WORST CASE @ TJ = +150C TYP @ TA = +25C 10 8 7 15 8 5 8 5 4 6 8 10 12 14 VDD TELCOM SEMICONDUCTOR, INC. 16 18 4 6 8 10 12 VDD 14 16 18 4-249 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428 SUPPLY CURRENT CHARACTERISTICS (Load on Single Output Only) Supply Current vs. Frequency Supply Current vs. Capacitive Load 60 60 VDD = 18V 2 MHz VDD = 18V 50 1000 pF 2200 pF 50 ISUPPLY (mA) ISUPPLY (mA) 900 kHz 40 600 kHz 30 20 200 kHz 10 40 100 pF 30 20 10 20 kHz 0 100 0 1000 CLOAD (pF) 10 10,000 Supply Current vs. Frequency Supply Current vs. Capacitive Load 60 60 2 MHz VDD = 12V 50 50 40 40 ISUPPLY (mA) ISUPPLY (mA) VDD = 12V 30 900 kHz 20 600 kHz 200 kHz 20 kHz 0 100 1000 CLOAD (pF) 30 20 100 pF 100 1000 FREQUENCY (kHz) Supply Current vs. Frequency Supply Current vs. Capacitive Load 60 VDD = 6V VDD = 6V 50 50 ISUPPLY (mA) ISUPPLY (mA) 1000 pF 0 10 10,000 60 40 30 2 MHz 20 900 kHz 600 kHz 200 kHz 20 kHz 10 4-250 2200 pF 10 10 0 100 100 1000 FREQUENCY (kHz) 1000 CLOAD (pF) 40 2200 pF 30 1000 pF 20 10 100 pF 0 10,000 10 100 1000 FREQUENCY (kHz) TELCOM SEMICONDUCTOR, INC.