SPU02N60S5 - Infineon Technologies

2008-04-07Rev. 2.5 Page 1

SPU02N60S5

SPD02N60S5

Cool MOS™ Power Transistor VDS 600 V

RDS(on) 3Ω

ID1.8 A

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dtrated

• Ultra low effective capacitances

• Improved transconductance

PG-TO251PG-TO252

Type Package Ordering Code

SPU02N60S5 PG-TO251 Q67040-S4226

SPD02N60S5 PG-TO252 Q67040-S4213

Marking

02N60S5

Maximum Ratings

Parameter Symbol Value Unit

Continuous drain current

= 25 °C

= 100 °C

1.8

1.1

Pulsed drain current, t

limited by T

uls

3.2

Avalanche energy, single pulse

= 1.35 A, V

= 50 V

50 mJ

Avalanche energy, repetitive t

limited by T

jmax1

)

= 1.8 A, V

= 50 V

0.07

Avalanche current, repetitive t

limited by T

1.8 A

Gate source voltage V

±20 V

Gate source voltage AC (f >1Hz) V

±30

Power dissipation, TC = 25°C

tot

25 W

Operating and storage temperature T

-55... +150 °C

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2008-04-07Rev. 2.5 Page 2

SPU02N60S5

SPD02N60S5

Maximum Ratings

Parameter Symbol Value Unit

Drain Source voltage slope

VDS = 480 V, ID = 1.8 A, Tj = 125 °C

dv/dt20 V/ns

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Thermal resistance, junction - case RthJC - - 5 K/W

Thermal resistance, junction - ambient, leaded RthJA --75

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 2)

RthJA

Soldering temperature, *)

1.6 mm (0.063 in.) from case for 10s

Tsold - - 260 °C

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V

Drain-Source avalanche

breakdown voltage

V(BR)DS VGS=0V, ID=1.8A - 700 -

Gate threshold voltage VGS(th) ID=80µΑ,VGS=VDS 3.5 4.5 5.5

Zero gate voltage drain current IDSS VDS=600V, VGS=0V,

Tj=25°C,

Tj=150°C

0.5

µA

Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA

Drain-source on-state resistance RDS(on) VGS=10V, ID=1.1A,

Tj=25°C

Tj=150°C

2.7

7.3

Ω

*) TO252: reflow soldering, MSL3; TO251: wavesoldering

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2008-04-07Rev. 2.5 Page 3

SPU02N60S5

SPD02N60S5

Electrical Characteristics , at T

= 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Characteristics

Transconductance gfs VDS≥2*ID*RDS(on)max,

ID=1.1A

- 1.4 - S

Input capacitance Ciss VGS=0V, VDS=25V,

f=1MHz

- 240 - pF

Output capacitance Coss - 77 -

Reverse transfer capacitance Crss - 4.4 -

Turn-on delay time td(on) VDD=350V, VGS=0/10V,

ID=1.8A, RG=50Ω

- 35 - ns

Rise time tr- 35 -

Turn-off delay time td(off) - 35 42

Fall time tf- 20 30

Gate Charge Characteristics

Gate to source charge Qgs VDD=350V, ID=1.8A - 2.3 - nC

Gate to drain charge Qgd - 4.5 -

Gate charge total QgVDD=350V, ID=1.8A,

VGS=0 to 10V

- 7.3 9.5

Gate plateau voltage V(plateau) VDD=350V, ID=1.8A - 8 - V

1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.

2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

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2008-04-07Rev. 2.5 Page 4

SPU02N60S5

SPD02N60S5

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Inverse diode continuous

forward current

ISTC=25°C - - 1.8 A

Inverse diode direct current,

pulsed

ISM - - 3.2

Inverse diode forward voltage VSD VGS=0V, IF=IS- 1 1.2 V

Reverse recovery time trr VR=350V, IF=IS ,

diF/dt=100A/µs

- 860 1460 ns

Reverse recovery charge Qrr - 1.6 - µC

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit

typ. typ.

Thermal resistance

Rth1 0.1 K/W

Rth2 0.184

Rth3 0.306

Rth4 1.207

Rth5 0.974

Rth6 0.251

Thermal capacitance

Cth1 0.00002806 Ws/K

Cth2 0.0001113

Cth3 0.0001679

Cth4 0.000547

Cth5 0.001388

Cth6 0.019

External Heatsink

TjTcase

Tamb

Cth1 Cth2

Rth1 Rth,n

Cth,n

Ptot (t)

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2008-04-07Rev. 2.5 Page 5

SPU02N60S5

SPD02N60S5

1 Power dissipation

Ptot = f(TC)

0 20 40 60 80 100 120 °C 160

SPU02N60S5

Ptot

2 Safe operating area

ID= f ( VDS )

parameter : D = 0 , TC=25°C

10 010 110 210 3

VDS

-2

-1

tp = 0.001 ms

tp = 0.01 ms

tp = 0.1 ms

tp = 1 ms

3 Typ. output characteristic

ID = f (VDS); Tj=25°C

parameter: tp= 10 µs, VGS

0 5 10 15 V 25

VDS

7.5V

8.5V

10V

12V

20V

4 Drain-source on-state resistance

RDS(on) = f(Tj)

parameter : ID = 1.1 A, VGS = 10 V

-60 -20 20 60 100 °C 180

Ω

17 SPU02N60S5

RDS(on)

typ

98%

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2008-04-07Rev. 2.5 Page 6

SPU02N60S5

SPD02N60S5

5 Typ. transfer characteristics

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max

parameter: tp = 10 µs

0 4 8 12 VGS 20

6 Typ. gate charge

VGS =f (QGate)

parameter: ID = 1.8 A pulsed

0 1 2 3 4 5 6 7 8 nC 10

QGate

16 SPU02N60S5

VGS

0.2 VDS max

0.8 VDS max

7 Forward characteristics of body diode

IF = f (VSD)

parameter: T

, tp= 10 µs

0 0.4 0.8 1.2 1.6 2 2.4 V3

VSD

-2

-1

SPU02N60S5

Tj = 25 °C typ

Tj = 25 °C (98%)

Tj = 150 °C typ

Tj = 150 °C (98%)

8 Avalanche SOA

IAR = f (tAR)

par.: Tj≤ 150 °C

10 -3 10 -2 10 -1 10 010 110 210 4

µs

tAR

0.2

0.4

0.6

0.8

1.2

1.4

1.6

IAR

Tj(START)=25°C

Tj(START)=125°C

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2008-04-07Rev. 2.5 Page 7

SPU02N60S5

SPD02N60S5

9 Avalanche energy

EAS = f(Tj)

par.: ID = 1.35 A, VDD = 50 V

20 40 60 80 100 120 °C 160

EAS

10 Drain-source breakdown voltage

V(BR)DSS = f(Tj)

-60 -20 20 60 100 °C 180

540

560

580

600

620

640

660

680

720

SPU02N60S5

V(BR)DSS

11 Typ. capacitances

C = f(VDS)

parameter: VGS=0V, f=1 MHz

0 10 20 30 40 50 60 70 80 V 100

VDS

Ciss

Coss

Crss

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2008-04-07Rev. 2.5 Page 8

SPU02N60S5

SPD02N60S5

Definition of diodes switching characteristics

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2008-04-07

Rev. 2.5 Page 9

SPU02N60S5

SPD02N60S5

PG-TO252-3-1, PG-TO252-3-11, PG-TO252-3-21 (D-PAK)

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2008-04-07

Rev. 2.5 Page 10

SPU02N60S5

SPD02N60S5

PG-TO251-3-1, PG-TO251-3-21 (I-PAK)

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2008-04-07Rev. 2.5 Page 11

SPU02N60S5

SPD02N60S5

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