UNISONIC TECHNOLOGIES CO., LTD
MMBTA92 PNP SILICON TRANSISTOR
www.unisonic.com.tw 1 of 3
Copyright © 2009 Unisonic Technologies Co., Ltd QW-R206-005,D
HIGH VOLTAGE PNP
TRANSISTOR
DESCRIPTION
The UTC MMBTA92 are high voltage PNP transistors, designed
for telephone signal switching and for high voltage amplifier.
FEATURES
* High Collector-Emitter voltage: VCEO=-300V
* Collector Dissipation: PC(MAX)=350mW
Lead-free: MMBTA92L
Halogen-free:MMBTA92G
ORDERING INFORMATION
Ordering Number Pin Assignment
Normal Lead Free Halogen Free Package 1 2 3 Packing
MMBTA92-AE3-R MMBTA92L-AE3-R MMBTA92G-AE3-R SOT-23 E B C Tape Reel
MARKING
MMBTA92 PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 3
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ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO -300 V
Collector-Emitter Voltage VCEO -300 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -500 mA
Ta=25°C 350 mW
TC=25°C 1.5 W
Collector Dissipation
Derate Above Ta >25°C
PC
12 mW/°C
Junction Temperature TJ +150 °C
Storage Temperature TSTG -40 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO IC=-100μA, IE=0 -300 V
Collector-Emitter Breakdown Voltage BVCEO IC=-1mA, IB=0 -300 V
Emitter-Base Breakdown Voltage BVEBO IE=-100μA, IC=0 -5 V
Collector Cut-Off Current ICBO V
CB=-200V, IE=0 -0.25 μA
Emitter Cut-Off Current IEBO V
EB=-3V, IC=0 -0.10 μA
VCE=-10V, IC=-1mA 60
VCE=-10V, IC=-10mA 80
DC Current Gain (Note) hFE
VCE=-10V, IC=-30mA 80
Collector-Emitter Saturation Voltage VCE(SAT)1 IC=-20mA, IB=-2mA -0.5 V
Base-Emitter Saturation Voltage VBE(SAT)1 IC=-20mA, IB=-2mA -0.90 V
Current Gain Bandwidth Product fT V
CE=-20V, IC=-10mA, f=100MHz 50 MHz
Collector Base Capacitance Ccb V
CB=-20V, IE=0, f=1MHz 6 pF
Note: Pulse test: PW<300μs, Duty Cycle<2%, VCE(SAT)1<200mV (Class SIN)
MMBTA92 PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 3 of 3
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TYPICAL CHARACTERISTICS
DC Current Gain, hFE
Collector Current, IC (mA)
DC Current Gain
Collector Current, IC (mA)
Saturation Voltage
VCE(SAT), VBE(SAT) (mV)
VCE=-10V VCE(SAT)
VBE(SAT)
IC=10*IB
103
102
101
100
-100-101-102-103
-104
-103
-102
-101
-104-100-101-102-103-104
Collector-Base Voltage(V)
CIB(pF), CCB(pF)
Capacitance
CIB
Collector Current, IC (mA)
Current Gain Bandwidth
Product (MHz)
Current Gain Bandwidth Product
CCB
102
101
-10-1 -100-101-102
VCE=-20V
f=100MHz
-100-101-102
103
102
101
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
