VS-30.PF1.PbF Series, VS-30.PF1.-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 11-Feb-16 2Document Number: 93705
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) TC = 95 °C, 180° conduction half sine wave 30
A
Maximum peak one cycle
non-repetitive surge current IFSM
10 ms sine pulse, rated VRRM applied 300
10 ms sine pulse, no voltage reapplied 350
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 450 A2s
10 ms sine pulse, no voltage reapplied 636
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 6360 A2s
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM 30 A, TJ = 25 °C 1.41 V
Forward slope resistance rtTJ = 150 °C 10.09 m
Threshold voltage VF(TO) 0.992 V
Maximum reverse leakage current IRM
TJ = 25 °C VR = Rated VRRM 0.1 mA
TJ = 150 °C 6
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time trr IF at 30 Apk
25 A/μs
25 °C
450 ns
Reverse recovery current Irr 6.1 A
Reverse recovery charge Qrr 2.16 μC
Snap factor S Typical 0.6
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg -40 to +150 °C
Maximum thermal resistance,
junction to case RthJC DC operation 0.8
°C/W
Maximum thermal resistance,
junction to ambient RthJA 40
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.2
Approximate weight 6g
0.21 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device
Case style TO-247AC modified 30EPF10
30EPF12
Case style TO-247AC 30APF10
30APF12
IFM trr
dir
dt
IRM(REC)
Qrr
t
tatb