BSP 149 SIPMOS Small-Signal Transistor VDS 200 V ID 0.48 A RDS(on) 3.5 N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code Tape and Reel Information Pin Configuration Marking Package BSP 149 Q67000-S071 E6327: 1000 pcs/reel 1 2 3 4 G D S D BSP 149 SOT-223 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 200 V Drain-gate voltage, RGS = 20 k VDGR 200 Gate-source voltage VGS 20 ESD Sensitivity (HBM) as per MIL-STD 883 - Class 1 Continuous drain current, TA = 28 C ID 0.48 A Pulsed drain current, TA = 25 C ID puls 1.44 Max. power dissipation, TA = 25 C Ptot 1.8 W Operating and storage temperature range Tj, Tstg - 55 ... + 150 C Thermal resistance 1) RthJA RthJS 70 10 K/W DIN humidity category, DIN 40 040 - E - IEC climatic category, DIN IEC 68-1 - 55/150/56 1) chip-ambient chip-soldering point Transistor on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for drain connection. Data Sheet 1 05.99 BSP 149 Electrical Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 200 - - - 1.8 - 1.2 - 0.7 Static Characteristics Drain-source breakdown voltage VGS = - 3 V, ID = 0.25 mA Gate threshold voltage V(BR)DSS VGS(th) VDS = 3 V, ID = 1 mA Drain-source cutoff current VDS = 200 V, VGS = - 3 V Tj = 25 C Tj = 125 C Gate-source leakage current A IDSS - - - - 0.2 200 - 10 100 IGSS VGS = 20 V, VDS = 0 Drain-source on-resistance VGS = 0 V, ID = 0.03 A V nA RDS(on) - 2.5 3.5 0.4 0.75 - - 500 670 - 40 60 - 12 20 Dynamic Characteristics Forward transconductance VDS 2 x ID x RDS(on)max, ID = 0.48 A Input capacitance gfs Ciss VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance S pF Coss VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Crss Turn-on time ton, (ton = td(on) + tr) VDD = 30 V, VGS = - 2 ... + 5 V, RGS = 50 , ID = 0.29 A td(on) - 7 10 tr - 20 30 Turn-off time toff, (toff = td(off) + tf) VDD = 30 V, VGS = - 2 ... + 5 V, RGS = 50 , ID = 0.29 A td(off) - 60 80 tf - 50 65 Data Sheet 2 ns 05.99 BSP 149 Electrical Characteristics (cont'd) at Tj = 25 C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. Reverse Diode Continuous reverse drain current TA = 25 C IS Pulsed reverse drain current ISM A - - 0.48 - - 1.44 - 0.9 1.2 Limit Values Unit Test Condition - TA = 25 C Diode forward on-voltage VSD V IF = 0.96 A, VGS = 0 VGS(th) Grouping Range of VGS(th) Symbol VGS(th) Threshold voltage selected in groups 1): VGS(th) P R S T U V W min. max. - 0.15 V - 0.95 - 1.08 - 1.21 - 1.34 - 1.47 - 1.60 - 1.73 - 0.80 - 0.93 - 1.06 - 1.19 - 1.32 - 1.45 - 1.58 V V V V V V V VD1 = 0.2 V; VD2 = 3 V; ID = 1 mA 1) A specific group cannot be ordered separately. Each reel only contains transistors from one group. Data Sheet 3 05.99 BSP 149 Characteristics at Tj = 25 C, unless otherwise specified. Total power dissipation Ptot = f (TA) Safe operating area ID = f (VDS) parameter: D = 0.01, TC = 25 C Typ. output characteristics ID = f (VDS) parameter: tp = 80 s Data Sheet Typ. drain-source on-resistance RDS(on) = f (ID) parameter: VGS 4 05.99 BSP 149 Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 s, VDS 2 x ID x RDS(on)max. Typ. forward transconductance gfs = f (ID) parameter: VDS 2 x ID x RDS(on)max., tp = 80 s Drain-source on-resistance RDS(on) = f (Tj) parameter: ID = 0.03 A, VGS = 0 V, (spread) Typ. capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz Data Sheet 5 05.99 BSP 149 Gate threshold voltage VGS(th) = f (Tj) parameter: VDS = 3 V, ID = 1 mA, (spread) Forward characteristics of reverse diode IF = f (VSD) parameter: tp = 80 s, Tj, (spread) Drain current ID = f (TA) parameter: VGS 3 V Safe operating area ID = f (VDS) parameter: D = 0, TC = 25 C Data Sheet 6 05.99 BSP 149 Drain-source breakdown voltage V(BR) DSS = b x V(BR)DSS (25 C) Data Sheet 7 05.99