TF256-4-TL-H - ON Semiconductor

TF256

No. A1616-1/5

Features

• High gain : GV=2.7dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz)

•

Ultrasmall package facilitates miniaturization in end products [1.0mm×0.6mm×0.27mm (max 0.3mm)]

•

Best suited for use in electret condenser microphone for audio equipments and telephones

•

Excellent transient characteristics

•

Adoption of FBET process

•

Halogen free compliance

Speciﬁ cations

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Gate-to-Drain Voltage VGDO --20 V

Gate Current IG10 mA

Drain Current ID1mA

Allowable Power Dissipation PD30 mW

Junction Temperature Tj 150 °C

Storage Temperature Tstg --55 to +150 °C

Package Dimensions

unit : mm (typ)

7055-001

1051 1 TKIM TC-00002534/N2509GB TKIM TC-00002096

SANYO Semiconductors

DATA SHEET

TF256 N-channel Silicon Juncton FET

Electret Condenser Microphone

Applications

http://semicon.sanyo.com/en/network

Ordering number : ENA1616A

Product & Package Information

• Package : USFP

• JEITA, JEDEC : -

• Minimum Packing Quantity : 10,000 pcs./real

Packing Type: TL Marking

Electrical Connection

LOT No.

1 : Drain

2 : Source

3 : Gate

SANYO : USFP

0.6 0.2

0.1

0.27

0.05

1.0

0.8

0.11

0 to 0.02

0.15

0.175

TF256

No. A1616-2/5

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Rank min typ max

Gate-to-Drain Breakdown Voltage V(BR)GDO IG=--100μA --20 V

Cutoff Voltage VGS(off) VDS=2V, ID=1μA --0.1 --0.35 --1.0 V

Drain Current IDSS VDS=2V, VGS=0V

100 180

μA

140 280

5 240 450

Forward Transfer Admittance | yfs |VDS=2V, VGS=0V, f=1kHz 0.75 1.7 mS

Input Capacitance Ciss VDS=2V, VGS=0V, f=1MHz 3.1 pF

Reverse Transfer Capacitance Crss VDS=2V, VGS=0V, f=1MHz 1.0 pF

[Ta=25°C, VCC=2.0V, RL=2.2kΩ, Cin=5pF, See speciﬁ ed Test Circuit.]

Voltage Gain GVVIN=10mV, f=1kHz 3 1.0 dB4 2.0

5 3.0

Reduced Voltage Characteristic ΔGVV

VIN=10mV, f=1kHz, VCC=2.0V → 1.5V

3 --0.5 --1.0 dB4 --0.6 --1.3

5 --0.9 --2.0

Frequency Characteristic ΔGvf f=1kHz to 110Hz --1.0 dB

Total Harmonic Distortion THD VIN=30mV, f=1kHz 3 1.4 %4 0.9

5 0.35

Output Noise Voltage VNO VIN=0V, A curve --105 --100 dB

Test Circuit

OSC

5pF +

33μF

2.2kΩVCC=2.0V

VCC=1.5V

VTVM

THD

Voltage gain

Frequency Characteristic

Distortion

Reduced Voltage Characteristic

ID -- VDS

Drain-to-Source Voltage, VDS -- V

Drain Current, ID -- μA

ID -- VGS

Gate-to-Source Voltage, VGS -- V

Drain Current, ID -- μA

0 0.5 4.0 4.5 5.01.0 1.5 2.0 2.5 3.0 3.5

400

300

350

200

250

100

150

IT15213

--0.10V

--0.05V

--0.15V

--0.20V

--0.25V

--0.30V

VGS=0V

450

350

250

150

--0.50 --0.40 --0.30 --0.20 --0.10 0--0.45 --0.35 --0.25 --0.15 --0.05

500

400

300

200

100

IT16271

VDS=2V

IDSS=450μA

300μA

150

100μA

TF256

No. A1616-3/5

VGS(off) -- IDSS

| yfs | -- IDSS

Ciss -- VDS

Crss -- VDS

Drain Current, IDSS -- μA

Forward T ransfer Admittance, | yfs | -- mS

Drain Current, IDSS -- μA

Cutoff Voltage, VGS(off) -- V

Drain-to-Source Voltage, VDS -- V

Input Capacitance, Ciss -- pF

Drain-to-Source Voltage, VDS -- V

Reverse Transfer Capacitance, Crss -- pF

ID -- VGS

Gate-to-Source Voltage, VGS -- V

Drain Current, ID -- μA

GV -- IDSS

Drain Current, IDSS -- μA

Voltage Gain, GV -- dB

IT15218

1.0 1.0 10

23 57357 2

VGS=0V

f=1MHz

1.0

1.0 10

23 57357 2

IT15219

VGS=0V

f=1MHz

VDS=2V

Ta=75°C

25°C

--25°C

450

350

250

150

--0.50 --0.40 --0.30 --0.20 --0.10 0--0.45 --0.35 --0.25 --0.15 --0.05

400

300

200

100

IT15215

GV -- Cin

Electret Capacitance, Cin -- pF

Voltage Gain, GV -- dB

GV -- VCC

Supply Voltage, VCC -- V

Voltage Gain, GV -- dB

0.20

0.15

0.10

0.05

0.25

0.30

0.35

0.40

0.45

0.50 VDS=2V

ID=1μA

0.5

1.0

1.5

2.0

2.5

50 200 300 400 500100 150 250 350 450

IT16272

50 100 200 300 400 500150 250 350 450

--0.5

2.0

3.0

2.5

1.0

0.5

1.5

3.5

50 100 200 300 400 500150 250 350 450

IT16273

VDS=2V

VGS=0V

f=1kHz

IT16274

GV : VCC=2V

IN=10mV

f=1kHz

L=2.2kΩ

Cin=5pF

IDSS : VDS=2V

01234 65

--3

--2

--1

IT16275 IT16276

GV : VIN=10mV

f=1kHz

L=2.2kΩ

Cin=5pF

IDSS=450μA

300μA

150μA

02468 1612 1410

--10

--8

--6

--4

--2

10 GV : VCC=2V

IN=10mV

f=1kHz

L=2.2kΩ

IDSS=450μA

300μA

150μA

100μA

TF256

No. A1616-4/5

THD -- IDSS

Drain Current, IDSS -- μA

Total Harmonic Distortion, THD -- %

THD -- VIN

Input Voltage, VIN -- mV

Total Harmonic Distortion, THD -- %

PD -- Ta

Ambient Temperature, T a -- °C

Allowable Power Dissipation, PD -- mW

ΔGVV -- IDSS

Drain Current, IDSS -- μA

Reduced Voltage Characteristic, ΔGVV -- dB

00 16014012010080604020

IT15226

IT16279

0.4

0.6

0.8

1.2

1.4

1.6

1.8

0.2

1.0

2.4

2.0

2.2 THD : VCC=2V

IN=30mV

f=1kHz

L=2.2kΩ

Cin=5pF

IDSS : VDS=2V

100

1.0

0.1 0 50 100 150 200

IT16278

--1.6

--1.4

--1.2

--1.0

--0.8

--0.4

--0.6

--0.2

0ΔGVV : VCC=2V→1.5V

IN=10mV

f=1kHz

L=2.2kΩ

Cin=5pF

IDSS : VDS=2V

THD : VCC=2V

f=1kHz

L=2.2kΩ

Cin=5pF

50 100 200 300 400 500150 250 350 450

IT16277

IDSS=100μA

300μA

450μA

150μA

TF256

No. A1616-5/5PS

This catalog provides information as of January, 2011. Speciﬁ cations and information herein are subject

to change without notice.

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"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

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