TF256 Ordering number : ENA1616A SANYO Semiconductors DATA SHEET N-channel Silicon Juncton FET TF256 Electret Condenser Microphone Applications Features * * * * * * High gain : GV=2.7dB typ (VCC=2V, RL=2.2k, Cin=5pF, VIN=10mV, f=1kHz) Ultrasmall package facilitates miniaturization in end products [1.0mmx0.6mmx0.27mm (max 0.3mm)] Best suited for use in electret condenser microphone for audio equipments and telephones Excellent transient characteristics Adoption of FBET process Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Gate-to-Drain Voltage VGDO Gate Current IG Drain Current ID 1 mA Allowable Power Dissipation PD 30 mW Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Package Dimensions Product & Package Information unit : mm (typ) 7055-001 * Package : USFP * JEITA, JEDEC :* Minimum Packing Quantity : 10,000 pcs./real --20 V 10 mA 0.6 0.1 0.2 0.11 3 Packing Type: TL Marking 3 2 TL 0.15 N LOT No. 1 LOT No. 0.1 1.0 0.8 0 to 0.02 0.175 2 3 0.05 1 0.05 0.27 1 2 Electrical Connection 1 : Drain 2 : Source 3 : Gate SANYO : USFP 1 3 2 http://semicon.sanyo.com/en/network 10511 TKIM TC-00002534/N2509GB TKIM TC-00002096 No. A1616-1/5 TF256 Electrical Characteristics at Ta=25C Parameter Symbol Gate-to-Drain Breakdown Voltage V(BR)GDO VGS(off) Cutoff Voltage Drain Current IDSS Ratings Conditions Rank IG=--100A VDS=2V, ID=1A min typ Unit max --20 --0.1 VDS=2V, VGS=0V Forward Transfer Admittance | yfs | VDS=2V, VGS=0V, f=1kHz Input Capacitance Ciss Reverse Transfer Capacitance Crss VDS=2V, VGS=0V, f=1MHz VDS=2V, VGS=0V, f=1MHz V --0.35 --1.0 3 100 180 4 140 280 5 240 450 0.75 V A 1.7 mS 3.1 pF 1.0 pF [Ta=25C, VCC=2.0V, RL=2.2k, Cin=5pF, See specified Test Circuit.] Voltage Gain GV Reduced Voltage Characteristic VIN=10mV, f=1kHz VIN=10mV, f=1kHz, VCC=2.0V 1.5V GVV Frequency Characteristic THD Output Noise Voltage 1.0 4 2.0 5 3.0 3 --0.5 --1.0 4 --0.6 --1.3 5 --0.9 --2.0 3 1.4 dB f=1kHz to 110Hz Gvf Total Harmonic Distortion 3 --1.0 VIN=30mV, f=1kHz VNO dB VIN=0V, A curve 4 0.9 5 0.35 dB % --105 --100 dB Test Circuit Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic 2.2k VCC=2.0V VCC=1.5V 33F + 5pF VTVM V THD OSC ID -- VDS 150 --0.15V --0.20V --0.25V 50 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Drain-to-Source Voltage, VDS -- V 0 A 250 200 150 0 A --0.10V 300 30 200 350 S= 45 Drain Current, ID -- A --0.05V 100 VDS=2V 400 300 250 ID -- VGS 450 V GS=0V 350 Drain Current, ID -- A 500 ID S 400 0 100 --0.30V 4.5 5.0 IT15213 A 15 50 A 0 10 0 --0.50 --0.45 --0.40 --0.35 --0.30 --0.25 --0.20 --0.15 --0.10 --0.05 Gate-to-Source Voltage, VGS -- V 0 IT16271 No. A1616-2/5 TF256 ID -- VGS 450 Forward Transfer Admittance, | yfs | -- mS 350 300 250 25 C 75 C 200 Ta = Drain Current, ID -- A 400 150 100 5 --2 50 C 0 --0.50 --0.45 --0.40 --0.35 --0.30 --0.25 --0.20 --0.15 --0.10 --0.05 Gate-to-Source Voltage, VGS -- V 1.5 1.0 0.5 100 150 200 250 300 350 400 450 Drain Current, IDSS -- A 500 IT16272 Ciss -- VDS 10 VGS=0V f=1MHz 7 0.40 Input Capacitance, Ciss -- pF Cutoff Voltage, VGS(off) -- V 2.0 0 50 0 VDS=2V ID=1A 0.45 VDS=2V VGS=0V f=1kHz IT15215 VGS(off) -- IDSS 0.50 | yfs | -- IDSS 2.5 VDS=2V 0.35 0.30 0.25 0.20 0.15 0.10 5 3 2 0.05 0 50 100 150 200 250 300 350 400 450 Drain Current, IDSS -- A 3.0 7 5 2 1.0 3 5 7 2 10 IT15218 GV : VCC=2V VIN=10mV f=1kHz RL=2.2k Cin=5pF IDSS : VDS=2V 2 1.0 7 GV -- IDSS 3.5 Voltage Gain, GV -- dB Reverse Transfer Capacitance, Crss -- pF 5 Drain-to-Source Voltage, VDS -- V VGS=0V f=1MHz 2.5 2.0 1.5 1.0 0.5 0 3 3 5 7 2 1.0 3 5 7 10 Drain-to-Source Voltage, VDS -- V GV : VIN=10mV f=1kHz RL=2.2k Cin=5pF 5 450A I DSS= 300A 3 100A 1 0 3 4 Supply Voltage, VCC -- V 5 6 IT16275 400 450 500 IT16274 450A I DSS= 300A 150A 100A --2 --4 --8 2 350 0 --6 1 300 2 --2 0 250 GV : VCC=2V VIN=10mV f=1kHz RL=2.2k 4 --1 --3 200 GV -- Cin 6 150A 2 150 10 8 4 100 Drain Current, IDSS -- A Voltage Gain, GV -- dB 6 --0.5 50 2 IT15219 GV -- VCC 7 Voltage Gain, GV -- dB 3 IT16273 Crss -- VDS 3 1.0 500 --10 0 2 4 6 8 10 12 Electret Capacitance, Cin -- pF 14 16 IT16276 No. A1616-3/5 GVV : VCC=2V1.5V VIN=10mV f=1kHz RL=2.2k Cin=5pF IDSS : VDS=2V --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 50 100 150 200 250 300 350 400 Drain Current, IDSS -- A Total Harmonic Distortion, THD -- % THD : VCC=2V VIN=30mV f=1kHz RL=2.2k Cin=5pF IDSS : VDS=2V 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 50 100 150 200 250 300 350 Drain Current, IDSS -- A THD : VCC=2V f=1kHz RL=2.2k Cin=5pF 3 2 100 I DSS= 10 7 5 A 150 3 2 1.0 7 5 400 450 500 IT16279 A A 300 A 450 3 2 0.1 500 THD -- VIN 100 7 5 0 50 100 150 Input Voltage, VIN -- mV IT16277 THD -- IDSS 2.4 450 Total Harmonic Distortion, THD -- % GVV -- IDSS 0 PD -- Ta 35 Allowable Power Dissipation, PD -- mW Reduced Voltage Characteristic, GVV -- dB TF256 200 IT16278 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT15226 No. A1616-4/5 TF256 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of January, 2011. Specifications and information herein are subject to change without notice. PS No. A1616-5/5