a eee ee ae ee 12E D B u3cz254 o08sads & i T-2X7-0F MAXIMUM RATINGS ee wee ee Rating Symbol BCW67 BCW68 Unit MOTORCLA SC XSTRS / R F Collector-Emitter Voltage VcEO 32 45 Vde Collector-Base Voltage VcBo 45 60 Vdc BCW67L, AL, BL, CL Emitter-Base Voltage VEsO 5.0 Vde Collector Current Continuous Ic 800 mAdc BCW68L, FL, GL THERMAL CHARACTERISTICS CASE 318-03, STYLE 6 Characteristic Symbol Max Unit SOT-23 (TO-236AB) Total Device Dissipation FR-5 Board,* Pp 225 mw . Ta = 25C Derate above 25C 18 mWPc 3 Collector Thermal Resistance Junction to Ambient Raa 556 CAV a 3 Total Device Dissipation Pp 300 mw is 1 Alumina Substrate,** Ta = 25C 1 7 ase Derate above 26C 2.4 mWwrc 2 ; Thermal Resistance Junction to Ambient Raja 417 CW 2 Emitter Junction and Storage Temperature Ty. Tstg 55 to +150 C *FR-5 = 1.0 x 0.75 x 0.062 in. GENERAL PURPOSE **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. TRANSISTORS DEVICE MARKING PNP SILICON BCW67L = DD; BCW68SL = DP; BCW67AL = DA; BCW67BL = DB; BCW67CL = DC; BCW68FL = DF; BCW68GL = OH ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) | Characteristic [ Symbol! | Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BRICEO Vde (lc = 10 mAde, Ig = 0) BCW67 Series 32 _ _ BCW68 Series 45 _ _ Collector-Emitter Breakdown Voltage V(BRICES Vde (Ic = 10 wAdc, Veg = 0) BCW67 Series 45 -_ _ BCW68 Series 60 Emitter-Base Breakdown Voltage ViBRIEBO 5.0 _ _ Vde (Ie = 10 Ade, Ic = 0} Collector Cutoff Current Ices (VcE = 32 Vde, Ig = 0) BCW@7 Series _ _ 20 nAdc (VcE = 45 Vde, Ie = 0) BCW68 Series _ - 20 (VcE = 32 Vde, Ig = 0, Ta = 150C) BCW67 Series = _ 10 Adc (Vcg = 45 Vde, lg = 0, Ta = 150C) BCW6S Series _ ~ 10 Emitter Cutoff Current leBo _ _ 20 nAde (Veg = 4.0 Vde, Ic = 0) ON CHARACTERISTICS OC Current Gain hre _ (Ic = 10 mAde, Vog = 1.0 Vde) BCW67L,AL,68L,FL 75 _ - BCW67BL,68GL 120 _ -_ BCWE7CL 180 ~_ (l = 100 mAde, Veg = 1.0 Vde) BCW67L,AL,68L,FL 100 _ 250 8CW67BL,68GL 160 _ 400 BCW67CL 260 - 630 {l = 300 mAdc, VcE = 1.0 Vde) BCW67L,AL,68L,FL 35 _ - BCW67BL,68GL 60 _ - BCWS7CL 100 _ - Collector-Emitter Saturation Voltage (I = 300 mAde, 1g = 30 mAdc) VcE{sat) - - 1.5 Vde Base-Emitter Saturation Voltage (I = 500 mAdc, lg = 50 mAdc) VBE(sat} - _ 2.0 Vde SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fr 100 _ - MHz (I = 20 mAdc, Voge = 10 Vde, f = 100 MHz) Output Capacitance (Vcp = 10 Vde, Ig = 0, f = 1.0 MHz) Cobo _ _ 18 pF input Capacitance (VER = 0.5 Vde, Ic = 0, f = 1.0 MHz) Cibo _ - 105 pF Noise Figure (Ic = 0.2 mAdc, VcE = 5.0 Vde, Rg = 1.0 kf, NF _ - 10 dB f = 1.0 kHz, BW = 200 Hz) MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2-141 2 Ae Tey a