MMST3904
Document number: DS30082 Rev. 16 - 2
1 of 7
www.diodes.com
September 2019
© Diodes Incorporated
MMST3904
40V NPN SMALL SIGNAL TRANSISTOR IN SOT323
Features
BVCEO > 40V
IC = 200mA Collector Current
Epitaxial Planar Die Construction
Ultra-Small Surface Mount Package
Complementary PNP Type: MMST3906
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT323
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.006 grams (Approximate)
Ordering Information (Note 4)
Part Number
Compliance
Marking
Tape Width (mm)
Quantity Per Reel
MMST3904-7-F
Standard
K2N
8
3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Date Code Key
Year
2018
2019
2020
2021
2022
2023
2024
2025
2026
2027
2028
Code
F
G
H
I
J
K
L
M
N
O
P
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Top View
Device Symbol
Pin-out Top View
C
E
B
e3
SOT323
K2N = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: G = 2019)
M or M = Month (ex: 9 = September)
MMST3904
Document number: DS30082 Rev. 16 - 2
2 of 7
www.diodes.com
September 2019
© Diodes Incorporated
MMST3904
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
200
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
PD
200
mW
Thermal Resistance, Junction to Ambient (Note 5)
RJA
625
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 6)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes: 5. For a device mounted with the collector lead on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is
measured under still air conditions whilst operating in a steady-state.
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMST3904
Document number: DS30082 Rev. 16 - 2
3 of 7
www.diodes.com
September 2019
© Diodes Incorporated
MMST3904
Thermal Characteristics and Derating Information
0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
AMax Power Dissipation vs.
Ambient Temperature
150
200
250
300
350
0
400
MMST3904
Document number: DS30082 Rev. 16 - 2
4 of 7
www.diodes.com
September 2019
© Diodes Incorporated
MMST3904
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
BVCBO
60
V
IC = 10µA, IE = 0
Collector-Emitter Breakdown Voltage
BVCEO
40
V
IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage
BVEBO
5
V
IE = 10µA, IC = 0
Collector Cutoff Current
ICEX
50
nA
VCE = 30V, VEB(OFF) = 3V
Base Cutoff Current
IBL
50
nA
VCE = 30V, VEB(OFF) = 3V
ON CHARACTERISTICS (Note 7)
DC Current Gain
hFE
40
70
100
60
30


300


IC = 100µA, VCE = 1V
IC = 1mA, VCE = 1V
IC = 10mA, VCE = 1V
IC = 50mA, VCE = 1V
IC = 100mA, VCE = 1V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.25
0.30
V
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.65

0.85
0.95
V
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
4
pF
VCB = 5V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
8
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1
10
k
VCE = 10V, IC = 1mA,
f = 1.0MHz
Voltage Feedback Ratio
hre
0.5
8.0
x 10-4
Small Signal Current Gain
hfe
100
400
Output Admittance
hoe
1
40
µS
Current Gain-Bandwidth Product
fT
300
MHz
VCE = 20V, IC = 10mA,
f = 100MHz
Noise Figure
NF
5
dB
VCC = 5V, IC = 100A,
RS = 1k, f = 1MHz
SWITCHING CHARACTERISTICS
Delay Time
td
35
ns
VCC = 3V, IC = 10mA,
VBE(OFF) = -0.5V, IB1 = 1mA
Rise Time
tr
35
ns
Storage Time
ts
200
ns
VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA
Fall Time
tf

50
ns
Note: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
MMST3904
Document number: DS30082 Rev. 16 - 2
5 of 7
www.diodes.com
September 2019
© Diodes Incorporated
MMST3904
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
0.1
1
10
0.1 1 10 100 1,000
V , BASE-EMITTER (V)
BE(SAT)
SATURATION VOLTAGE
I , COLLECTOR CURRENT (mA)
CTypical Base-Emitter
Saturation Voltage vs. Collector Current
IC
B
I= 10
0
5
15
10
0.1 110 100
C , INPUT CAPACITANCE (pF)
IBO
C , OUTPUT CAPACITANCE (pF)
OBO
V , COLLECTOR-BASE VOLTAGE (V)
CBInput and Output Capacitance vs.
Collector-Base Voltage
Cibo
Cobo
f = 1MHz
1
10
1,000
100
0.1 110 1,000
100
h , DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
C
Typical DC Current Gain vs. Collector Current
T = -25°C
AT = +2C
A
T = 125°C
A
V = 1.0V
CE
0.01
0.1
1
0.1 1 10 100 1,000
V , COLLECTOR-EMITTER (V)
CE(SAT)
SATURATION VOLTAGE
I , COLLECTOR CURRENT (mA)
CTypical Collector-Emitter
Saturation Voltage vs. Collector Current
IC
B
I= 10
MMST3904
Document number: DS30082 Rev. 16 - 2
6 of 7
www.diodes.com
September 2019
© Diodes Incorporated
MMST3904
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT323
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT323
Dimensions
Value
(in mm)
C
0.650
G
1.300
X
0.470
Y
0.600
Y1
2.500
Y1 G
Y
X
C
SOT323
Dim
Min
Max
Typ
A1
0.00
0.10
0.05
A2
0.90
1.00
0.95
b
0.25
0.40
0.30
c
0.10
0.18
0.11
D
1.80
2.20
2.15
E
2.00
2.20
2.10
E1
1.15
1.35
1.30
e
0.650 BSC
e1
1.20
1.40
1.30
F
0.375
0.475
0.425
L
0.25
0.40
0.30
a
--
All Dimensions in mm
a
E1E
Fe1
b
L
c
e
A2
A1
D
MMST3904
Document number: DS30082 Rev. 16 - 2
7 of 7
www.diodes.com
September 2019
© Diodes Incorporated
MMST3904
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
www.diodes.com