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54
63
2
1
NPN / PNP Silicon AF Transistor Array
• High breakdown voltage
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated NPN/PNP
Transistor in one package
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
Tape loading orientation
SC74_Tape
123
456
W1s
Direction of Unreeling
Top View Marking on SC74 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
EHA07177
654
321
C1 B2 E2
C2B1E1
TR1 TR2
Type Marking Pin Configuration Package
SMBTA06UPN s2P 1=E 2=B 3=C 4=E 5=B 6=C SC74
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 80 V
Collector-base voltage VCBO 80
Emitter-base voltage VEBO 4
Collector current IC500 mA
Peak collector current ICM 1 A
Base current IB100 mA
Peak base current IBM 200
Total power dissipation-
TS ≤ 115 °C Ptot 330 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
1Pb-containing package may be available upon special request
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Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 105 K/W
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 V(BR)CEO 80 - - V
Collector-base breakdown voltage
IC = 100 µA, IE = 0 V(BR)CBO 80 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 V(BR)EBO 4 - -
Collector-base cutoff current
VCB = 80 V, IE = 0
VCB = 80 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
20
µA
Collector-emitter cutoff current
VCE = 60 V, IB = 0 ICEO - - 100 nA
DC current gain2)
IC = 10 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
hFE
100
100
-
-
-
-
-
Collector-emitter saturation voltage2)
IC = 100 mA, IB = 10 mA VCEsat - - 0.25 V
Base-emitter voltage2)
IC = 100 mA, VCE = 1 V VBE(ON) - - 1.2
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 20 MHz fT- 100 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz Ccb - 7 - pF
1For calculation of RthJA please refer to Application Note Thermal Resistance
2Pulse test: t < 300µs; D < 2%
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DC current gain hFE = ƒ(IC)
VCE = 1 V
EHP00821
10
h
C
FE
10
1
10
-1 0
Ι
100 C
25 C
-50 C
1
10
2
10
3
10
mA
2
10
3
10
0
10
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
0.0
10
EHP00819
CEsat
V
0
3
10
Ι
CmA
1
10
2
10
C
5
5
100
25 C
-50 C
0.1 0.2 0.3 0.4 0.5 0.6 V 0.8
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
EHP00818
10
0V
BEsat
1.5
C
10
3
1
10
-1
5
0.5 1.0
10
0
5
Ι
V
mA
5
10
2
100 ˚C
25 ˚C
-50 ˚C
Collector current IC = ƒ(VBE)
VCE = 1V
EHP00815
10
0V
BE
1.5
C
10
3
1
10-1
5
0.5 1.0
100
5
Ι
V
mA
5
102
100 C
25 C
-50 C
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Collector cutoff current ICBO = ƒ(TA)
VCBO = 80 V
EHP00820
10
0C
A
150
nA
CBO
10
4
1
10
-1
5
50 100
5
10
2
10
0
5
Ι
T
max
typ
5
10
3
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 2 GHz
10
EHP00817
03
10mA
1
10
3
10
5
5
101102
102
C
T
fMHz
Ι
55
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 4 8 12 16 V22
VCB(VEB
)
0
5
10
15
20
25
30
35
40
45
50
55
pF
65
CCB(CEB)
CCB
CEB
Total power dissipation Ptot = ƒ(TS)
0 20 40 60 80 100 120 °C 150
TS
0
50
100
150
200
250
300
mW
400
Ptot
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SMBTA06UPN
Permissible Pulse Load RthJS = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
stp
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
stp
0
10
1
10
2
10
3
10
Ptotmax/PtotDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
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Package SC74
Package Outline
Foot Print
Standard Packing
0.5
0.95
1.9
2.9
546
321
1.1 MAX.
(0.35)
(2.25)
±0.2
2.9 B
0.2
+0.1
-0.05
0.35
Pin 1
marking
M
B6x
0.95
1.9
0.15
-0.06
+0.1
1.6
10˚ MAX.
A
±0.1
2.5
0.25
10˚ MAX.
±0.1
±0.1
A0.2
M
0.1 MAX.
2.7
4
3.15
Pin 1
marking
8
0.2
1.15
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
Manufacturer
2005, June
Date code (Year/Month)
BCW66H
Type code
Pin 1 marking
Laser marking
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
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SMBTA06UPN
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
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