2SB1260
PNP
Plastic-Encapsulate
Transistors
Features
• Power dissipation: PCM = 0.5W(Tamb=25ć)
• Collector current: ICM = -1A
• Collector-base voltage: V(BR)CBO = -80V
• Operating and storage junction temperature range
TJ, Tstg: -55ć to + 150ć
Electrical Characteristics @ 25к Unless Otherwise Specified
Symbol Parameter Min Typ Max Unit
V(BR)CEO Collector-Emitter Breakdown Voltage
V(BR)CBO Collector-Base Breakdown Voltage
(IC=-50A, IE=0) -80
V(BR)EBO Emitter-Base Breakdown Voltage
ICBO Collector cut-off Current
(VCB=-60V, IE=0) --- --- -1.0
IEBO Emitter cut-off Current
(VEB=-4V, IC=0) --- --- -1.0
hFE DC current gain
(VCE=-3V, IC=-0.1A) 82 --- 390 ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=-0.5A, IB=-0.05A)
fTTransition Frequency
(VCE=-5.0Vdc, IC=-0.05Adc,F=30MHZ)
CLASSIFICATION OF hFE
Rank P Q R
Range 82-180 120-270 180-390
Marking ZL
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    
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     
    
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   
A
B
C
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G H
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E
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SOT-89
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: 3 2007/03/01
TM
Micro Commercial Components
E
B
C
MHZ
---
---
-80
uA
V
uA
(IC=-1mA, IB=0)
(IE=-50A, IC=0)
---
---
---
---
---
-5.0 V
V
V
80
---
--- --- -0.4

x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
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2SB1260-Q
2SB1260-P
2SB1260-R
MCC
Revision: 3 2007/03/01
TM
Micro Commercial Components
www.mccsemi.com
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