FDS4480 - Fairchild Semiconductor Corporation

2002 Fairchild Semiconductor Corporation FDS4480 Rev D1 (W)

FDS4480

40V N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low RDS(ON) and fast switching speed.

Applications

• DC/DC converter

Features

• 10.8 A, 40 V. RDS(ON) = 12 mΩ @ VGS = 10 V

• Low gate charge (29 nC)

• High performance trench technology for extremely

low RDS(ON)

• High power and current handling capability

SO-8

DDDD

SSSG

Pin 1

SO-8

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

VDSS Drain-Source Voltage 40 V

VGSS Gate-Source Voltage +30/–20 V

ID Drain Current – Continuous (Note 1a) 10.8 A

– Pulsed 45

Power Dissipation for Single Operation (Note 1a) 2.5

(Note 1b) 1.4

(Note 1c) 1.2

TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C

Thermal Characteristics

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W

RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W

RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS4480 FDS4480 13’’ 12mm 2500 units

FDS4480

May 2013

FDS4480 Rev D1 (W)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol

Parameter Test Conditions Min Typ

Max

Units

Drain-Source Avalanche Ratings (Note 2)

EAS Drain-Source Avalanche Energy Single Pulse, VDD=40V, ID=10.8A

240 mJ

IAS Drain-Source Avalanche Current 10.8 A

Off Characteristics

BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 40 V

∆BVDSS

∆TJ Breakdown Voltage Temperature

Coefficient ID = 250 µA, Referenced to 25°C

mV/°C

IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1 µA

IGSSF Gate–Body Leakage, Forward VGS = 30 V, VDS = 0 V 100 nA

IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA

On Characteristics (Note 2)

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2 3.9 5 V

∆VGS(th)

∆TJ Gate Threshold Voltage

Temperature Coefficient ID = 250 µA, Referenced to 25°C

–8

mV/°C

RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 10.8 A

VGS = 10 V,ID = 10.8 A, TJ=125°C

13 12

21 mΩ

ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 22 A

gFS Forward Transconductance VDS = 10 V, ID = 10.8 A 36 S

Dynamic Characteristics

Ciss Input Capacitance 1686 pF

Coss Output Capacitance 384 pF

Crss Reverse Transfer Capacitance

VDS = 20 V, V GS = 0 V,

f = 1.0 MHz 185 pF

Switching Characteristics (Note 2)

td(on) Turn–On Delay Time 12 22 ns

tr Turn–On Rise Time 9 18 ns

td(off) Turn–Off Delay Time 30 48 ns

tf Turn–Off Fall Time

VDD = 20 V, ID = 1 A,

VGS = 10 V, RGEN = 6 Ω

15 27 ns

Qg Total Gate Charge 29 41 nC

Qgs Gate–Source Charge 8.7 nC

Qgd Gate–Drain Charge

VDS = 20 V, ID = 10.8 A,

VGS = 10 V

8.0 nC

FDS4480

FDS4480 Rev D1 (W)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol

Parameter Test Conditions Min Typ

Max

Units

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A

VSD Drain–Source Diode Forward

Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V

trr Diode Reverse Recovery Time IF = 10.8 A, diF/dt = 100 A/µs 27 nS

Qrr Diode Reverse Recovery Charge 58 nC

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 50°C/W when

mounted on a 1in2

pad of 2 oz copper

b) 105°C/W when

mounted on a .04 in2

pad of 2 oz copper

c) 125°C/W when mounted

on a minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDS4480

FDS4480 Rev D1 (W)

Typical Characteristics

01234

VDS, DRAIN TO SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

VGS = 10V 5.5V

5.0V

4.5V

6.0V

0.8

1.2

1.4

1.6

1.8

020 40 60 80

ID, DRAIN CURRENT (A)

DS(ON), NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

VGS = 5.0V

10V

6.0V

7.0V

5.5V

8.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.4

0.6

0.8

1.2

1.4

1.6

1.8

-50 -25 025 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (oC)

DS(ON), NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

ID = 10.8A

VGS = 10V

0.007

0.01

0.013

0.016

0.019

0.022

0.025

45678910

VGS, GATE TO SOURCE VOLTAGE (V)

RDS(ON), ON-RESISTANCE (OHM)

ID = 5.4A

TA = 125oC

TA = 25oC

Figure 3. On-Resistance Variation

withTemperature. Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

23456

VGS, GATE TO SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

TA = -55oC25oC

125oC

VDS = 5V

0.0001

0.001

0.01

0.1

100

00.2 0.4 0.6 0.8 11.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

IS, REVERSE DRAIN CURRENT (A)

VGS = 0V

TA = 125oC

25oC

-55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS4480

FDS4480 Rev D1 (W)

Typical Characteristics

08 16 32

Qg, GATE CHARGE (nC)

, GATE-SOURCE VOLTAGE (V)

400

800

1200

1600

2000

2400

0 10 20 30 40

VDS, DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

CISS

COSS

CRSS

f = 1 MHz

VGS = 0 V

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

0.01

0.1

100

0.01 0.1 110 100

VDS, DRAIN-SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

DC 10s1s100ms

100

RDS(ON) LIMIT

VGS = 10V

SINGLE PULSE

RθJA = 125oC/W

TA = 25oC

10ms

1ms

0.001 0.01 0.1 110 100 1000

t1, TIME (sec)

P(pk), PEAK TRANSIENT POWER (W)

SINGLE PULSE

RθJA = 125°C/W

TA = 25°C

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

0.001

0.01

0.1

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

r(t), NORMALIZED EFFECTIVE TRANSIENT

THERMAL RESISTANCE

RθJA(t) = r(t) * RθJA

RθJA = 125oC/W

TJ - TA = P * RθJA(t)

Duty Cycle, D = t1 / t2

P(pk)

t1t2

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

FDS4480

VDD = 25 V

VDD = 20 V

VDD = 15 V

ID = 10.8A

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Definition of Terms

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AccuPower™

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BitSiC™

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®*

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μSerDes™

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VCX™

VisualMax™

VoltagePlus™

XS™

™

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Rev. I64