© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1000 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 0.8 A
IDM TC= 25°C, Pulse Width Limited by TJM 1.5 A
IATC= 25°C 0.8 A
EAS TC= 25°C80mJ
dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PDTC= 25°C42W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-263 2.50 g
TO-220 3.00 g
TO-252 0.35 g
DS99865C(04/09)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 1000 V
VGS(th) VDS = VGS, ID = 50μA 2.0 4.0 V
IGSS VGS = ±20V, VDS = 0V ±50 nA
IDSS VDS = VDSS, VGS= 0V 3 μA
TJ = 125°C 100 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 17 20 Ω
PolarTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA08N100P
IXTP08N100P
IXTY08N100P
VDSS = 1000V
ID25 = 0.8A
RDS(on) ≤≤
≤≤
≤ 20ΩΩ
ΩΩ
Ω
Features
zInternational Standard Packages
zAvalanche Rated
zLow Package Inductance
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zSwitched-Mode and Resonant-Mode
Power Supplies
zDC-DC Converters
zLaser Drivers
zAC and DC Motor Drives
zRobotics and Servo Controls
G = Gate D = Drain
S = Source TAB = Drain
TO-263 (IXTA)
TO-220 (IXTP)
D(TAB)
G
S
GS
(TAB)
G
S
(TAB)
TO-252 (IXTY)
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXTA08N100P IXTP08N100P
IXTY08N100P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS= 30V, ID = 0.5 • ID25, Note 1 0.35 0.60 S
Ciss 240 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 18 pF
Crss 3.6 pF
td(on) Resistive Switching Times 19 ns
trVGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 37 ns
td(off) RG = 50Ω (External) 35 ns
tf 34 ns
Qg(on) 11.3 nC
Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 1.7 nC
Qgd 6.7 nC
RthJC 3.0 °C/W
RthCS (TO-220) 0.50 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0V 0.8 A
ISM Repetitive, Pulse Width Limited by TJM 2.4 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr IF = 0.8A, -di/dt = 100A/μs 750 ns
VR = 100V, VGS = 0V
Note 1: Pulse Test, t ≤ 300 μs; Duty Cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Pins: 1 - Gate 2 - Drain
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
TO-252 (IXTY) Outline
Pins: 1 - Gate 2,4 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 2.19 2.38 0.086 0.094
A1 0.89 1.14 0.035 0.045
A2 0 0.13 0 0.005
b 0.64 0.89 0.025 0.035
b1 0.76 1.14 0.030 0.045
b2 5.21 5.46 0.205 0.215
c 0.46 0.58 0.018 0.023
c1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 4.32 5.21 0.170 0.205
E 6.35 6.73 0.250 0.265
E1 4.32 5.21 0.170 0.205
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
H 9.40 10.42 0.370 0.410
L 0.51 1.02 0.020 0.040
L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 2.54 2.92 0.100 0.115
© 2009 IXYS CORPORATION, All Rights Reserved
IXTA08N100P IXTP08N100P
IXTY08N100P
Fig. 1. Ou tp u t C h aracteri sti cs
@ 25ºC
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
024681012141618
V
DS
- Volts
I
D
- Am peres
V
GS
= 10V
7V
5V
6V
Fig. 2. Extended Output Characteristics
@ 25º C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0 5 10 15 20 25 30 35
V
DS
- Volts
I
D
- Am peres
V
GS
= 10V
7V
6V
5V
Fi g . 3. Outp u t C h ar acter i sti cs
@ 125ºC
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 5 10 15 20 25 30 35 40
V
DS
- Volts
I
D
- Am peres
V
GS
= 10V
7V
5V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 0. 4A Val ue
vs. Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- N ormaliz ed
V
GS
= 10V
I
D
= 0.8A
I
D
= 0.4A
Fig. 5. R
DS(on)
Normalized to I
D
= 0.4A Value
vs. Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
I
D
- Amperes
R
DS(on)
- No rm a lize d
V
GS
= 10V T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temper a tu r e
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- A mpe res
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXTA08N100P IXTP08N100P
IXTY08N100P
IXYS REF: T_08N100P (1A) 04-02-08-A
Fig. 7. Input Adm ittance
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GS
- Vo lt s
I
D
- Am peres
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
I
D
- Amp eres
g
f s
- S ie me ns
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0.4 0.5 0.6 0.7 0.8 0.9
V
SD
- Volts
I
S
- Am peres
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0123456789101112
Q
G
- NanoCoulombs
V
GS
- V o lts
V
DS
= 500V
I
D
= 0.4A
I
G
= 1mA
Fig. 11. Capacitance
1
10
100
1,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1MHz Ciss
Crss
Coss
Fig . 12 . Maximum Tr ansi en t Th er mal
Impedance
0.1
1.0
10.0
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- º C / W