© 2014 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/24/14
TVS Diode Arrays (SPA® Diodes)
Low Capacitance ESD Protection - SP3031 Series
SP3031
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress only rating and operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied.
Absolute Maximum Ratings
Symbol Parameter Value Units
IPP Peak Current (tp=8/20μs) 5.0 A
TOP Operating Temperature –40 to 125 °C
TSTOR Storage Temperature –55 to 150 °C
Thermal Information
Parameter Rating Units
Storage Temperature Range –55 to 150 °C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature
(Soldering 20-40s)
260 °C
Electrical Characteristics (TOP=25ºC)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage VRWM 5.0 V
Reverse Breakdown Voltage VBR 1R=1mA 6.0 V
Reverse Leakage Current ILEAK VR=5V with 1pin at GND 1µA
Clamp Voltage1VC
IPP=1A, tp=8/20µs, Fwd 6.9 V
IPP=2A, tp=8/20µs, Fwd 7. 5 V
Dynamic Resistance RDYN (VC2-VC1)/(IPP2-IPP1) 0.6 Ω
ESD Withstand Voltage1VESD
IEC61000-4-2 (Contact) ±10 kV
IEC61000-4-2 (Air) ±15 kV
Diode Capacitance1CI/O-I/O Reverse Bias=0V 0.8 pF
Note: 1. Parameter is guaranteed by design and/or device characterization.
Capacitance vs. Reverse Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.01.0 2.03.0 4.05.0
Capacitance (pF)
DC Bias (V)
Insertion Loss (S21) I/O to GND
Pulse Waveform
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
110%
0.05.0 10.0 15.0 20.0 25.0 30.0
Time (μs)
Percent of I
PP
-5
Frequency (MHz)
-10
-15
-20
-25
0
-30
-35
10 100 1000
Attenuation (dB)
Transmission Line Pulsing(TLP) Plot
TLP Voltage (V)
TLP Current (A)