1999. 11. 30 1/1
SEMICONDUCTOR
TECHNICAL DATA
BC559/560
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
LOW NOISE APPLICATION.
FEATURE
·For Complementary with NPN Type BC549/550.
MAXIMUM RATING (Ta=25℃)
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
AJ
KG
H
FF
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. COLLECTOR
2. BASE
3. EMITTER
+
_
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
BC559 VCBO
-30
V
BC560 -50
Collector-Emitter Voltage
BC559 VCEO
-30
V
BC560 -45
Emitter-Base Voltage VEBO -5 V
Collector Current IC-100 mA
Collector Power Dissipation PC625 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter
Breakdown Voltage
BC559 V(BR)CEO IC=-10mA, IB=0 -30 - -
V
BC560 -45 - -
Collector-Base
Breakdown Voltage
BC559 V(BR)CBO IC=-10μA, IE=0
-30 - -
V
BC560 -50 - -
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10μA, IC=0 -5.0 - - V
Collector Cut-off Current ICBO VCB=-30V, IE=0 - - -15 nA
DC Current Gain hFE IC=-2mA, VCE=-5V 110 - 800
Base-Emitter Voltage VBE(ON) IC=-2mA, VCE=-5V -0.55 - -0.7 V
Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-5mA - - -0.6 V
Base-Emitter Saturation Voltage VBE(sat) IC=-100mA, IB=-5mA - -0.9 - V
Transition Frequency fTIC=-10mA, VCE=-5V, f=100MHz - 300 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - - 7.0 pF
Noise Figure NF IC=-200μA, VCE=-5V
Rg=10kΩ, f=1kHz - - 4.0 dB
Note : hFE Classification A:110～220, B:200～450, C:420～800
