SEMICONDUCTOR BC559/560 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. B FEATURE C A *For Complementary with NPN Type BC549/550. N E K G MAXIMUM RATING (Ta=25) SYMBOL RATING UNIT -30 BC559 VCBO Collector-Base Voltage V BC560 -50 H F F BC559 -30 VCEO V -45 L BC560 VEBO -5 V Collector Current IC -100 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Tstg -55150 Emitter-Base Voltage Storage Temperature Range 1 2 C Collector-Emitter Voltage 3 MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M CHARACTERISTIC J D DIM A B C D E F G H J K L M N 1. COLLECTOR 2. BASE 3. EMITTER TO-92 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL Collector-Emitter BC559 Breakdown Voltage BC560 Collector-Base BC559 Breakdown Voltage BC560 V(BR)CEO V(BR)CBO TEST CONDITION MIN. TYP. MAX. -30 - - -45 - - -30 - - -50 - - IC=-10mA, IB=0 UNIT V IC=-10A, IE=0 V V(BR)EBO IE=-10A, IC=0 -5.0 - - V Collector Cut-off Current ICBO VCB=-30V, IE=0 - - -15 nA DC Current Gain hFE IC=-2mA, VCE=-5V 110 - 800 Base-Emitter Voltage VBE(ON) IC=-2mA, VCE=-5V -0.55 - -0.7 V Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-5mA - - -0.6 V Base-Emitter Saturation Voltage VBE(sat) IC=-100mA, IB=-5mA - -0.9 - V IC=-10mA, VCE=-5V, f=100MHz - 300 - MHz VCB=-10V, IE=0, f=1MHz - - 7.0 pF - - 4.0 dB Emitter-Base Breakdown Voltage fT Transition Frequency Collector Output Capacitance Cob Noise Figure NF IC=-200A, VCE=-5V Rg=10k, f=1kHz Note : hFE Classification 1999. 11. 30 A:110220, B:200450, Revision No : 2 C:420800 1/1