CS19-08ho1 High Efficiency Thyristor VRRM = 800 V I TAV = 20 A VT = 1,31 V Single Thyristor Part number CS19-08ho1 Backside: anode 2 1 3 Features / Advantages: Applications: Package: TO-220 Thyristor for line frequency Planar passivated chip Long-term stability Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. 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(c) 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150827c CS19-08ho1 Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 800 I R/D reverse current, drain current VT forward voltage drop TVJ = 25C 50 A 1 mA TVJ = 25C 1,32 V 1,65 V 1,31 V IT = 20 A IT = 40 A IT = 20 A IT = 40 A I T(RMS) RMS forward current 180 sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125C TC = 110 C RthCH max. Unit 900 V VR/D = 800 V average forward current Ptot typ. VR/D = 800 V I TAV It min. 1,73 V T VJ = 125 C 20 A 31 A TVJ = 125 C 0,86 V 22 m 0,7 K/W 0,50 K/W TC = 25C 170 W t = 10 ms; (50 Hz), sine TVJ = 45C 180 A t = 8,3 ms; (60 Hz), sine VR = 0 V 195 A t = 10 ms; (50 Hz), sine TVJ = 125 C 155 A t = 8,3 ms; (60 Hz), sine VR = 0 V 165 A t = 10 ms; (50 Hz), sine TVJ = 45C 160 As t = 8,3 ms; (60 Hz), sine VR = 0 V 160 As t = 10 ms; (50 Hz), sine TVJ = 125 C 120 As 115 As t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 230 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 125 C 9 t P = 300 s PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 C; f = 50 Hz repetitive, IT = t P = 200 s; di G /dt = 0,15 A/s; 60 A I G = 0,15 A; V = VDRM 20 A (dv/dt)cr critical rate of rise of voltage V = VDRM VGT gate trigger voltage I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current non-repet., I T = pF 5 W 2,5 W 0,5 W 150 A/s 500 A/s TVJ = 150C 500 V/s VD = 6 V TVJ = 25 C 1,5 TVJ = -40 C 2,5 V VD = 6 V TVJ = 25 C 28 mA TVJ = -40 C 50 mA TVJ = 150C 0,2 V 3 mA TVJ = 25 C 75 mA R GK = ; method 1 (linear voltage rise) VD = VDRM tp = 10 s IG = 0,1 A; di G /dt = V 0,1 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 50 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 0,1 A; di G /dt = 0,1 A/s VR = 100 V; I T = 20 A; V = VDRM TVJ =100 C di/dt = 10 A/s dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved 150 s 20 V/s t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20150827c CS19-08ho1 Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 35 Unit A -40 125 C -40 100 C 150 C 2 Weight MD mounting torque FC mounting force with clip g 0,4 0,6 Nm 20 60 N Product Marking Part Number XXXXXX Logo Assembly Line Lot # Zyyww abcdef Date Code Ordering Standard Ordering Number CS19-08ho1 Similar Part CS19-08ho1S CS19-12ho1 CS19-12ho1S Equivalent Circuits for Simulation I V0 R0 Package TO-263AB (D2Pak) (2) TO-220AB (3) TO-263AB (D2Pak) (2) * on die level Delivery Mode Tube Quantity 50 Code No. 471038 Voltage class 800 1200 1200 T VJ = 125 C Thyristor V 0 max threshold voltage 0,86 R0 max slope resistance * 19 IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved Marking on Product CS19-08ho1 V m Data according to IEC 60747and per semiconductor unless otherwise specified 20150827c CS19-08ho1 Outlines TO-220 A = supplier option H1 OP D 4 3 L 3x b2 2 L1 1 3x b 2x e Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 2.54 5.85 10.66 BSC 6.85 0.390 0.100 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 OP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. C A2 2 1 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150827c CS19-08ho1 Thyristor 60 160 1000 50 Hz, 80% VRRM VR = 0 V 140 40 120 IT 2 It TVJ = 45C ITSM 2 100 [A] 20 TVJ = 45C 100 [A s] TVJ = 125C [A] 125C 150C TVJ = 125C 80 TVJ = 25C 0 0,5 60 1,0 1,5 2,0 10 2,5 0,01 0,1 VT [V] Fig. 1 Forward characteristics 100 1 1 3 4 5 6 7 8 910 t [s] t [ms] Fig. 2 Surge overload current Fig. 3 I t versus time (1-10 ms) 2 1000 1: IGD, TVJ = 150C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C 2 40 dc = 1 0.5 0.4 0.33 0.17 0.08 30 10 100 VG 5 3 [s] 1 1 IT(AV)M Limit 20 4 2 [V] typ. tgd 6 [A] 10 TVJ = 125C 10 4: PGAV = 0.5 W 0,1 5: PGM = 2.5 W 6: PGM = 5 W IGD, TVJ = 125C 1 10 100 1 10 1000 0 100 1000 0 25 IG [mA] IG [mA] 75 100 125 150 175 TC [C] Fig. 5 Gate controlled delay time Fig. 4 Gate trigger characteristics 50 Fig. 6 Max. forward current at case temperature 0,8 dc = 1 0.5 0.4 0.33 0.17 0.08 40 30 RthHA 0.6 0.8 1.0 2.0 4.0 8.0 P(AV) 0,6 ZthJC 0,4 20 [K/W] [W] 0,2 10 0 0 10 20 IT(AV) [A] 0 50 100 0,0 100 150 Tamb [C] (c) 2015 IXYS all rights reserved 102 ti [s] 0.10 0.08 0.01 0.0011 0.18 0.17 0.17 0.025 0.32 0.09 103 104 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 101 Rthi [K/W] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20150827c