DMP2100U
Document number: DS35718 Rev. 8 - 3
1 of 6
www.diodes.com
February 2018
© Diodes Incorporated
DMP2100U
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
RDS(ON) MAX
Package
ID
TA = +25°C
-20V
38mΩ @ VGS = -10V
SOT23
-4.3A
43mΩ @ VGS = -4.5V
-4.0A
75mΩ @ VGS = -2.5V
-2.8A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
Load Switch
Power Management Functions
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 3kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ⎯ Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (Approximate)
Ordering Information (Notes 5 & 6)
Part Number
Compliance
Case
Packaging
DMP2100U-7
Standard
SOT23
3,000/Tape & Reel
DMP2100UQ-7
Automotive
SOT23
3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to https://www.diodes.com/quality/.
5. The ESD gate protection diode is only designed to protect against ESD events. No gate-source voltage greater than the maximum VGSS rating
(given on page 2) can be applied.
6. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Date Code Key
Year
2008
~
2017
2018
2019
2020
2021
2022
2023
2024
2025
Code
V
~
E
F
G
H
I
J
K
L
M
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
D
GS
Top View
Internal Schematic
Top View
SOT23
ESD PROTECTED TO 3kV
35P
YM
35P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: F = 2018)
M = Month (ex: 9 = September)
Equivalent Circuit
(Note 5)
D
S
G
ESD Gate
Protection Diode
NOT RECOMMENDED FOR NEW DESIGN
USE DMP2045U
DMP2100U
Document number: DS35718 Rev. 8 - 3
2 of 6
www.diodes.com
February 2018
© Diodes Incorporated
DMP2100U
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage (Note 7)
VGSS
±10
V
Continuous Drain Current (Note 9) VGS = -10V
Steady
State
TA = +25°C
TA = +70°C
ID
-4.3
-3.4
A
t<5s
TA = +25°C
TA = +70°C
ID
-5.5
-4.3
A
Maximum Continuous Body Diodes Forward Current (Note 9)
IS
-2
A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
IDM
-30
A
Pulsed Body Diodes Forward Current (10µs Pulse, Duty Cycle = 1%)
ISM
-30
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 8)
TA = +25°C
PD
0.8
W
TA = +70°C
0.5
Thermal Resistance, Junction to Ambient (Note 8)
Steady State
RθJA
161
°C/W
t<5s
96
Total Power Dissipation (Note 9)
TA = +25°C
PD
1.3
W
TA = +70°C
0.8
Thermal Resistance, Junction to Ambient (Note 9)
Steady State
RθJA
99
°C/W
t<5s
60
Thermal Resistance, Junction to Case (Note 9)
RθJC
15
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 10)
Drain-Source Breakdown Voltage
BVDSS
-20
—
—
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
—
—
-1
µA
VDS = -20V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±10
µA
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage
VGS(TH)
-0.3
—
-1.4
V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance
RDS(ON)
—
25
38
mΩ
VGS = -10V, ID = -3.5A
—
29
43
VGS = -4.5V, ID = -3A
—
37
75
VGS = -2.5V, ID = -1A
—
47
—
VGS = -1.8V, ID = -0.5A
Forward Transfer Admittance
|Yfs|
—
3
—
S
VDS = -5V, ID = -4A
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Ciss
—
216
—
pF
VDS = -15V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
—
90
—
pF
Reverse Transfer Capacitance
Crss
—
24
—
pF
Gate Resistnace
Rg
—
250
—
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 11)
Total Gate Charge
Qg
—
9.1
—
nC
VGS = -4.5V, VDS = -10V
ID = -4A
Gate-Source Charge
Qgs
—
1.6
—
nC
Gate-Drain Charge
Qgd
—
2.0
—
nC
Turn-On Delay Time
tD(ON)
—
80
—
ns
VDS = -10V, VGS = -4.5V,
RD = 2.5Ω, RG = 3.0Ω
Turn-On Rise Time
tR
—
155
—
ns
Turn-Off Delay Time
tD(OFF)
—
688
—
ns
Turn-Off Fall Time
tF
—
423
—
ns
Notes: 7. AEC-Q101 VGS maximum is ±9.6V.
8. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
9. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
10. Short duration pulse test used to minimize self-heating effect.
11. Guaranteed by design. Not subject to product testing.
NOT RECOMMENDED FOR NEW DESIGN
USE DMP2045U
DMP2100U
Document number: DS35718 Rev. 8 - 3
3 of 6
www.diodes.com
February 2018
© Diodes Incorporated
DMP2100U
0
4
8
12
16
20
0.5
1
1.5
2
2.5
Fig. 2 Typical Transfer Characteristic
-V , GATE-SOURCE VOLTAGE (V)
GS
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -5V
DS
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0
4
8
12
16
20
-I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
D
S
(
O
N
)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -4.5V
GS
0
1
2
3
4
5
Fig. 1 Typical Output Characteristic
-V , DRAIN-SOURCE VOLTAGE (V)
DS
0
4
8
12
16
20
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
V = -2.0V
GS
V = -3.0V
GS
V = -3.5V
GS
V = -4.5V
GS
V = -2.5V
GS
V = -1.5V
GS
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0
4
8
12
16
20
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
-I , DRAIN-SOURCE CURRENT (A)
D
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
D
S
(
O
N
)
V = -4.5V
GS
V = -2.5V
GS
Fig. 5 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
0.6
0.8
1.0
1.2
1.4
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
N
O
R
M
A
L
I
Z
E
D
)
D
S
O
N
1.6
V = -4.5V
I = -10A
GS
D
V = -2.5V
I = -5A
GS
D
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
Fig. 6 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
D
S
O
N
V = -4.5V
I = -10A
GS
D
V = -2.5V
I = -5A
GS
D
-ID, DRAIN CURRENT (A)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
(°C )
(°C )
-ID, DRAIN CURRENT (A)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
NOT RECOMMENDED FOR NEW DESIGN
USE DMP2045U
DMP2100U
Document number: DS35718 Rev. 8 - 3
4 of 6
www.diodes.com
February 2018
© Diodes Incorporated
DMP2100U
1,000
0 5 10 15 20
100
10
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
C , JUNCTION CAPACITANCE (pF)
T
Coss
Crss
f = 1MHz
Ciss
0.5
1.5
2.5
3.5
4.5
0 1 2 3 4 5 6 7 8 9 10
0
1.0
2.0
3.0
4.0
5.0
Q , TOTAL GATE CHARGE (nC)
Fig. 10 Gate-Charge Characteristics
g
-V , GATE-SOURCE VOLTAGE (V)
GS
V = -10V
I = -4A
DS
D
0.00001 0.001 0.01 0.1 1 10 100 1,000
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.0001
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
12
R (t) = r(t) *
JA R
R = 171
癈
/W
JA
JA
P(pk) t1
t2
0.001
0.01
0.1
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
0
0.3
0.6
0.9
1.2
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50
-25
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
V
,
G
A
T
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
(
V
)
G
S
(
T
H
)
I = -250µA
D
I = -1mA
D
0
2
4
6
8
10
12
14
16
18
20
0.2
0.4
0.6
0.8
1
1.2
Fig. 8 Diode Forward Voltage vs. Current
-V , SOURCE-DRAIN VOLTAGE (V)
SD
I
,
S
O
U
R
C
E
C
U
R
R
E
N
T
(
A
)
S
T = 25°C
A
-VGS(TH), GATE THRESHOLD VOLTAGE (V)
TA = 25°C
RθJA (t) = r(t) * RθJA
RθJA = 171℃/W
-IS, SOURCE CURRENT (A)
NOT RECOMMENDED FOR NEW DESIGN
USE DMP2045U
DMP2100U
Document number: DS35718 Rev. 8 - 3
5 of 6
www.diodes.com
February 2018
© Diodes Incorporated
DMP2100U
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
J
K1 K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
CB
D
G
F
a
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
X
Y
Y1 C
X1
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085
0.150
0.110
a
0°
8°
--
All Dimensions in mm
Dimensions
Value (in mm)
C
2.0
X
0.8
X1
1.35
Y
0.9
Y1
2.9
NOT RECOMMENDED FOR NEW DESIGN
USE DMP2045U
DMP2100U
Document number: DS35718 Rev. 8 - 3
6 of 6
www.diodes.com
February 2018
© Diodes Incorporated
DMP2100U
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
www.diodes.com
NOT RECOMMENDED FOR NEW DESIGN
USE DMP2045U
