NOT RECOMMENDED FOR NEW DESIGN USE DMP2045U DMP2100U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features BVDSS RDS(ON) MAX -20V 43m @ VGS = -4.5V Package 38m @ VGS = -10V ID TA = +25C -4.3A SOT23 75m @ VGS = -2.5V -4.0A -2.8A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 3kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) making it ideal for high efficiency power management applications. Mechanical Data Applications Load Switch Power Management Functions Case: SOT23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.008 grams (Approximate) D SOT23 D G S G ESD PROTECTED TO 3kV ESD Gate Protection Diode Top View Internal Schematic Top View S Equivalent Circuit (Note 5) Ordering Information (Notes 5 & 6) Part Number DMP2100U-7 DMP2100UQ-7 Notes: Compliance Standard Automotive Case SOT23 SOT23 Packaging 3,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to https://www.diodes.com/quality/. 5. The ESD gate protection diode is only designed to protect against ESD events. No gate-source voltage greater than the maximum VGSS rating (given on page 2) can be applied. 6. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information Date Code Key Year Code Month Code 2008 V ~ ~ Jan 1 Feb 2 DMP2100U Document number: DS35718 Rev. 8 - 3 2017 E Mar 3 2018 F Apr 4 35P = Product Type Marking Code YM = Date Code Marking Y = Year (ex: F = 2018) M = Month (ex: 9 = September) YM 35P 2019 G May 5 2020 H Jun 6 1 of 6 www.diodes.com 2021 I Jul 7 Aug 8 2022 J Sep 9 2023 K Oct O 2024 L 2025 M Nov N Dec D February 2018 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP2045U DMP2100U Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage (Note 7) Continuous Drain Current (Note 9) VGS = -10V Steady State t<5s TA = +25C TA = +70C TA = +25C TA = +70C Maximum Continuous Body Diodes Forward Current (Note 9) Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Pulsed Body Diodes Forward Current (10s Pulse, Duty Cycle = 1%) ID Value -20 10 -4.3 -3.4 Unit V V ID -5.5 -4.3 A IS IDM ISM -2 -30 -30 A A A A Thermal Characteristics Characteristic Symbol TA = +25C TA = +70C Steady State t<5s TA = +25C TA = +70C Steady State t<5s Total Power Dissipation (Note 8) Thermal Resistance, Junction to Ambient (Note 8) Total Power Dissipation (Note 9) Thermal Resistance, Junction to Ambient (Note 9) Test Condition PD RJA PD RJA Thermal Resistance, Junction to Case (Note 9) Operating and Storage Temperature Range Electrical Characteristics RJC TJ, TSTG Value 0.8 0.5 161 96 1.3 0.8 99 60 15 -55 to +150 Unit W C/W W C/W C (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 10) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 -- -- -- -- -- -- -1 10 V A A VGS = 0V, ID = -250A VDS = -20V, VGS = 0V VGS = 8V, VDS = 0V VGS(TH) RDS(ON) -1.4 38 43 75 -- -- m |Yfs| -- 25 29 37 47 3 V Static Drain-Source On-Resistance -0.3 -- -- -- -- -- VDS = VGS, ID = -250A VGS = -10V, ID = -3.5A VGS = -4.5V, ID = -3A VGS = -2.5V, ID = -1A VGS = -1.8V, ID = -0.5A VDS = -5V, ID = -4A Ciss Coss Crss Rg -- -- -- -- 216 90 24 250 -- -- -- -- pF pF pF Qg Qgs Qgd -- -- -- -- -- -- -- 9.1 1.6 2.0 80 155 688 423 -- -- -- -- -- -- -- nC nC nC ns ns ns ns Forward Transfer Admittance DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistnace SWITCHING CHARACTERISTICS (Note 11) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: tD(ON) tR tD(OFF) tF S VDS = -15V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VGS = -4.5V, VDS = -10V ID = -4A VDS = -10V, VGS = -4.5V, RD = 2.5, RG = 3.0 7. AEC-Q101 VGS maximum is 9.6V. 8. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 9. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing. DMP2100U Document number: DS35718 Rev. 8 - 3 2 of 6 www.diodes.com February 2018 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP2045U 20 20 VGS = -4.5V VGS = -3.5V VGS = -3.0V VGS = -2.5V -ID, DRAIN CURRENT (A) 16 )A ( T N E R 12 R U C N IA 8 R D ,D I DMP2100U 16 VDS = -5V ) A ( T N E 12 R R U C N I 8 A R D ,D I 4 -ID, DRAIN CURRENT (A) VGS = -2.0V VGS = -1.5V 4 TA = 150C TA = 125C TA = 85C TA = 25C 0 O (S D R 1 2 3 4 -VDS , DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 5 ) ( E C N A T S IS E R -N O E C R U O S -N I A R D , )N 0.08 0.07 0.06 0.05 VGS = -2.5V 0.04 VGS = -4.5V 0.03 0.02 0.01 O (S D R 0 0 4 8 12 16 -I D, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.08 0.07 V GS = -4.5V 0.06 TA = 150C 0.05 TA = 125C 0.04 TA = 85C TA = 25C 0.03 TA = -55C 0.02 0.01 0 ) ( E C N A T S IS E R -N O E C R U O S -N IA R D ,N 1.2 VGS = -4.5V ID = -10A 0.8 2.5 4 8 12 16 -I D, DRAIN CURRENT (A) 20 Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.4 1.0 1 1.5 2 -VGS , GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 0 20 1.6 ) D E Z E L I C A R M U R O O S N - ( N I E A R C D N A ,NT OS I S S D R E R -N O 0.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ) ( E C N A T S IS E R -N O E C R U O S -N I A R D ,N ) TA = -55C 0 0 VGS = -2.5V ID = -5A O S D 0.08 0.07 0.06 V GS = -2.5V ID = -5A 0.05 0.04 0.03 VGS = -4.5V ID = -10A 0.02 0.01 R 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature DMP2100U Document number: DS35718 Rev. 8 - 3 3 of 6 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE ( (C) C) Fig. 6 On-Resistance Variation with Temperature February 2018 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP2045U 20 18 16 )A ( T 14 N E R 12 R U C 10 E C R 8 U O S 6 ,S I 4 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.2 )V ( E G A 0.9 T L O V D L O H 0.6 S E R H T E T A G 0.3 , )H ID = -1mA ID = -250A T ( S G TAT=A=25 C 25 C 2 V 0 -50 -25 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 1,000 0.4 0.6 0.8 1 -VSD , SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 5.0 4.5 -VGS, GATE-SOURCE VOLTAGE (V) f = 1MHz CT, JUNCTION CAPACITANCE (pF) DMP2100U Ciss 100 Coss Crss 4.0 3.5 VDS = -10V ID = -4A 3.0 2.5 2.0 1.5 1.0 0.5 10 0 5 10 15 -V DS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 0 20 0 1 2 3 4 5 6 7 8 9 Qg, TOTAL GATE CHARGE (nC) Fig. 10 Gate-Charge Characteristics 10 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 (t) = r(t) RRJA r(t)**RR JA(t) JA JA RJA = 171 /W RJA = 171/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - T A = P * R JA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMP2100U Document number: DS35718 Rev. 8 - 3 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response 4 of 6 www.diodes.com 10 100 1,000 February 2018 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP2045U DMP2100U Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7 H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0 8 -All Dimensions in mm G Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X DMP2100U Document number: DS35718 Rev. 8 - 3 Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 5 of 6 www.diodes.com February 2018 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP2045U DMP2100U IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Copyright (c) 2018, Diodes Incorporated www.diodes.com DMP2100U Document number: DS35718 Rev. 8 - 3 6 of 6 www.diodes.com February 2018 (c) Diodes Incorporated Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Diodes Incorporated: DMP2100U-7