© 2004 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 150 V
VDGR TJ= 25°C to 175°C; RGS = 1 MΩ150 V
VGSM ±20 V
ID25 TC= 25°C96A
ID(RMS) External lead current limit 75 A
IDM TC= 25°C, pulse width limited by TJM 250 A
IAR TC= 25°C60A
EAR TC= 25°C40mJ
EAS TC= 25°C 1.0 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns
TJ≤ 150°C, RG = 4 Ω
PDTC= 25°C 480 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
MdMounting torque (TO-3P) 1.13/10 Nm/lb.in.
Weight TO-3P 5.5 g
TO-268 5.0 g
G = Gate D = Drain
S = Source TAB = Drain
DS99131C(05/04)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
VDSS VGS = 0 V, ID = 250 µA 150 V
VGS(th) VDS = VGS, ID = 250µA 2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS 25 µA
VGS = 0 V TJ = 150°C 250 µA
RDS(on) VGS = 10 V, ID = 0.5 ID25 24 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PolarHTTM
Power MOSFET
IXTQ 96N15P VDSS = 150 V
IXTT 96N15P ID25 = 96 A
RDS(on) = 24 mΩΩ
ΩΩ
Ω
N-Channel Enhancement Mode
Features
zInternational standard packages
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
- easy to drive and to protect
Advantages
zEasy to mount
zSpace savings
zHigh power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
TO-3P (IXTQ)
GDS(TAB)
TO-268 (IXTT)
GSD (TAB)
Preliminary Data Sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTQ 96N15P
IXTT 96N15P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 10 V; ID = 0.5 ID25, pulse test 35 45 S
Ciss 3500 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1000 pF
Crss 280 pF
td(on) 30 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 60 A 33 ns
td(off) RG = 4 Ω (External) 66 ns
tf18 ns
Qg(on) 110 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 26 nC
Qgd 59 nC
RthJC 0.31 K/W
RthCK (TO-3P) 0.21 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. typ. Max.
ISVGS = 0 V 96 A
ISM Repetitive 250 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = 25 A 150 ns
-di/dt = 100 A/µs
QRM VR = 100 V 2.0 µC
TO-268 Outline
TO-3P (IXTQ) Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463
© 2004 IXYS All rights reserved
IXTQ 96N15P
IXTT 96N15P
Fig. 2. Extended Output Characteristics
@ 25
º
C
0
25
50
75
100
125
150
175
200
02468101214161820
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
8V
9V
Fig. 3. Output Characteristics
@ 150
º
C
0
10
20
30
40
50
60
70
80
90
100
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
9V
5V
6V
7V
8V
Fig. 1. Output Characte ristics
@ 25
º
C
0
10
20
30
40
50
60
70
80
90
100
00.5 11.5 22.5
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
9V
7V
6V
8V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Temperature
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
D S ( o n )
- Normalize
d
I
D
= 96A
I
D
= 48A
V
GS
= 10V
Fig. 6. Drain Curre nt vs. Case
Temperature
0
10
20
30
40
50
60
70
80
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current
Limit
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.6
1
1.4
1.8
2.2
2.6
3
3.4
3.8
0 50 100 150 200 250
I
D
- Amperes
R
D S ( o n )
- Normalized
T
J
= 175ºC
T
J
= 25ºC
V
GS
= 10V
V
GS
= 15V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTQ 96N15P
IXTT 96N15P
Fig. 11. Capacitance
100
1000
10000
0 5 10 15 20 25 30 35 40
VDS - Volts
Capacitance - picoFarads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 102030405060708090100110
Q G - nanoCoulombs
VG S - Volts
V
DS
= 75V
I
D
= 48A
I
G
= 10m A
Fig. 7. Input Adm ittance
0
20
40
60
80
100
120
140
160
180
456 78910
VG S - Volts
I D - Amperes
T
J
= 150ºC
25ºC
-40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
0 25 50 75 100 125 150 175 200
I D
- Amperes
g
f s
- Siemens
T
J
= -40ºC
25ºC
150ºC
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
50
100
150
200
250
300
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VS D - Volts
I S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 12. For w ar d-Bias
Safe Operating Area
1
10
100
1000
1 10 100 1000
VD S - Volts
I D - Amperes
100µs
1ms
DC
T
J
= 175ºC
T
C
= 25ºC
R
DS(on)
Limit
10ms
25µs
© 2004 IXYS All rights reserved
IXTQ 96N15P
IXTT 96N15P
Fig. 13. M axim um Trans ie nt The rm al Resistance
0.01
0.10
1.00
1 10 100 1000
Pu ls e W id th - millis e c o n d s
R( t h ) J C
- ºC / W
