2005-07-22Rev. 2.3 Page 1
SPB11N60S5
Cool MOS™ Power Transistor VDS 600 V
RDS(on) 0.38 Ω
ID11 A
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dtrated
• Ultra low effective capacitances
• Improved transconductance
PG-TO263
Type Package Ordering Code
SPB11N60S5 PG-TO263 Q67040-S4199
Marking
11N60S5
Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
11
7
A
Pulsed drain current, t
p
limited by T
j
ma
x
ID
p
uls 22
Avalanche energy, single pulse
ID = 5.5 A, VDD = 50 V
EAS 340 mJ
Avalanche energy, repetitive tAR limited by Tjmax1
)
ID = 11 A, VDD = 50 V
EAR 0.6
Avalanche current, repetitive t
AR
limited by T
j
ma
x
I
AR
11 A
Gate source voltage VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, TC = 25°C Ptot 125 W
Operating and storage temperature T
j
,Tst
g
-55... +150 °C
2005-07-22Rev. 2.3 Page 2
SPB11N60S5
Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope
VDS = 480 V, ID = 11 A, Tj = 125 °C
dv/dt20 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 1 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 62
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 2)
RthJA
-
-
-
35
62
-
Soldering temperature, reflow soldering, MSL1
1.6 mm (0.063 in.) from case for 10s
Tsold - - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V
Drain-Source avalanche
breakdown voltage
V(BR)DS VGS=0V, ID=11A - 700 -
Gate threshold voltage VGS
(
th
)
ID=500µΑ,VGS=VDS 3.5 4.5 5.5
Zero gate voltage drain current IDSS VDS=600V, VGS=0V,
Tj=25°C,
Tj=150°C
-
-
-
-
25
250
µA
Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=7A,
Tj=25°C
Tj=150°C
-
-
0.34
0.92
0.38
-
Ω
Gate input resistance RGf=1MHz, open Drain - 29 -
2005-07-22Rev. 2.3 Page 3
SPB11N60S5
Electrical Characteristics , at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Transconductance gfs VDS≥2*ID*RDS(on)max,
ID=7A
- 6 - S
Input capacitance Ciss VGS=0V, VDS=25V,
f=1MHz
- 1460 - pF
Output capacitance Coss - 610 -
Reverse transfer capacitance Crss - 21 -
Effective output capacitance,3)
energy related
Co(er) VGS=0V,
VDS=0V to 480V
- 45 - pF
Effective output capacitance,4)
time related
Co(tr) - 85 -
Turn-on delay time td(on) VDD=350V, VGS=0/10V,
ID=11A, RG=6.8Ω
- 130 - ns
Rise time tr- 35 -
Turn-off delay time td(off) - 150 225
Fall time tf- 20 30
Gate Charge Characteristics
Gate to source charge Qgs VDD=350V, ID=11A - 10.5 - nC
Gate to drain charge Qgd - 24 -
Gate charge total QgVDD=350V, ID=11A,
VGS=0 to 10V
- 41.5 54
Gate plateau voltage V(plateau) VDD=350V, ID=11A - 8 - V
1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
4Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
2005-07-22Rev. 2.3 Page 4
SPB11N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous
forward current
ISTC=25°C - - 11 A
Inverse diode direct current,
pulsed
ISM - - 22
Inverse diode forward voltage VSD VGS=0V, IF=IS- 1 1.2 V
Reverse recovery time trr VR=350V, IF=IS ,
diF/dt=100A/µs
- 650 1105 ns
Reverse recovery charge Qrr - 7.9 - µC
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
typ. typ.
Thermal resistance
Rth1 0.015 K/W
Rth2 0.03
Rth3 0.056
Rth4 0.197
Rth5 0.216
Rth6 0.083
Thermal capacitance
Cth1 0.0001878 Ws/K
Cth2 0.0007106
Cth3 0.000988
Cth4 0.002791
Cth5 0.007285
Cth6 0.063
External Heatsink
TjTcase
Tamb
Cth1 Cth2
Rth1 Rth,n
Cth,n
Ptot (t)
2005-07-22Rev. 2.3 Page 5
SPB11N60S5
1 Power dissipation
Ptot = f(TC)
0 20 40 60 80 100 120 °C 160
TC
0
10
20
30
40
50
60
70
80
90
100
110
120
W
140
SPP11N60S5
Ptot
2 Safe operating area
ID= f ( VDS )
parameter : D = 0 , TC=25°C
10 010 110 210 3
V
VDS
-2
10
-1
10
0
10
1
10
2
10
A
ID
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
3 Transient thermal impedance
ZthJC = f(tp)
parameter: D=tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -1
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
ZthJC
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
4 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp= 10 µs, VGS
0 5 10 15 VDS 25
V
0
5
10
15
20
25
A
35
ID
6V
7V
8V
9V
20V
12V
10V
2005-07-22Rev. 2.3 Page 6
SPB11N60S5
5 Typ. output characteristic
ID = f (VDS); Tj=150°C
parameter: tp= 10 µs, VGS
0 5 10 15 V 25
VDS
0
2
4
6
8
10
12
14
A
18
ID
6V
7V
8V
9V
20V
12V
10V
6 Typ. drain-source on resistance
RDS(on)=f(ID)
parameter: Tj=150°C, VGS
0 2 4 6 8 10 12 14 A18
ID
0
0.5
1
mΩ
2
RDS(on)
20V
12V
10V
9V
8V
7V
6V
7 Drain-source on-state resistance
RDS(on) = f(Tj)
parameter : ID = 7 A, VGS = 10 V
-60 -20 20 60 100 °C 180
Tj
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
Ω
2.1 SPP11N60S5
RDS(on)
typ
98%
8 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
0 4 8 12 V 20
VGS
0
4
8
12
16
20
24
A
32
ID
25 °C
150 °C
2005-07-22Rev. 2.3 Page 7
SPB11N60S5
9 Typ. gate charge
VGS =f (QGate)
parameter: ID = 11 A pulsed
0 10 20 30 40 50 nC 65
QGate
0
2
4
6
8
10
12
V
16 SPP11N60S5
VGS
0.2 VDS max
0.8 VDS max
10 Forward characteristics of body diode
IF = f (VSD)
parameter: T
j
, tp= 10 µs
0 0.4 0.8 1.2 1.6 2 2.4 V3
VSD
-1
10
0
10
1
10
2
10
A
SPP11N60S5
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
11 Avalanche SOA
IAR = f (tAR)
par.: Tj≤ 150 °C
10 -3 10 -2 10 -1 10 010 110 210 4
µs
tAR
0
1
2
3
4
5
6
7
8
9
A
11
IAR
Tj(START)=125°C
Tj(START)=25°C
12 Avalanche energy
EAS = f(Tj)
par.: ID = 5.5 A, VDD = 50 V
20 40 60 80 100 120 °C 160
Tj
0
50
100
150
200
250
mJ
350
EAS
2005-07-22Rev. 2.3 Page 8
SPB11N60S5
13 Drain-source breakdown voltage
V(BR)DSS = f(Tj)
-60 -20 20 60 100 °C 180
Tj
540
560
580
600
620
640
660
680
V
720
SPP11N60S5
V(BR)DSS
14 Avalanche power losses
PAR = f (f )
parameter: EAR=0.6mJ
10 410 510 6
Hz
f
0
50
100
150
200
W
300
PAR
15 Typ. capacitances
C = f(VDS)
parameter: VGS=0V, f=1 MHz
0 100 200 300 400 V 600
VDS
0
10
1
10
2
10
3
10
4
10
pF
C
Ciss
Coss
Crss
16 Typ. Coss stored energy
Eoss=f(VDS)
0 100 200 300 400 V 600
VDS
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
µJ
7.5
Eoss
2005-07-22Rev. 2.3 Page 9
SPB11N60S5
Definition of diodes switching characteristics
2005-07-22Rev. 2.3 Page 10
SPB11N60S5
PG-TO263-3-2, PG-TO263-3-5, PG-TO263-3-22
2005-07-22Rev. 2.3 Page 11
SPB11N60S5
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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