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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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February 201 5
©2014 Fairchild Semiconductor Corporation
FDMC6686P Rev.C1 www.fairchildsemi.com
1
FDMC6686P P-Channel PowerTrench® MOSFET
FDMC6686P
P-Channel PowerTrench® MOSFET
-20 V, -56 A, 4 mΩ
Features
Max rDS(on) = 4 mΩ at VGS = -4.5 V, ID = -18 A
Max rDS(on) = 5.7 mΩ at VGS = -2.5 V, ID = -16 A
Max rDS(on) =11.5 mΩ at VGS = -1.8 V, ID = -11 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used
surface mount package
Lead-free and RoHS Compliant
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been optimized for rDS(ON), switching performance and
ruggedness.
Applications
Load Switch
Battery Management
Power Management
Reverse Polarity Protection
BottomTop
Power 33
Pin 1
Pin 1
G
D
S
S
S
D
DD
S
S
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage -20 V
VGS Gate to Source Voltage ±8 V
ID
Drain Current -Continuous TC = 25 °C -56 A -Continuous TA = 25 °C (Note 1a) -18
-Pulsed (Note 3) -377
PDPower Dissipation TC = 25 °C 40 W
Power Dissipation T A = 25 °C (Note 1a) 2.3
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RθJC Thermal Resistance, Junction to Case 3.1 °C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 53
Device Marking Device Package Reel Size Tape Width Quantity
FDMC6686P FDMC6686P Power 33 13 ’’ 12 mm 3000 units
www.fairchildsemi.com
2
©2014 Fairchild Semiconductor Corporation
FDMC6686P Rev.C1
FDMC6686P P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Off Characteristic s
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V -20 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient ID = -250 μA, referenced to 25 °C -15 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 μA
IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±100 nA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA -0.4 -0.75 -1 V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = -250 μA, referenced to 25 °C 3 mV/°C
rDS(on) Static Drain to Source On Resistance
VGS = -4.5 V, ID = -18 A 3.3 4
mΩ
VGS = -2.5 V, ID = -16 A 4.1 5.7
VGS = -1.8 V, ID = -11 A 6 11.5
VGS = -4.5 V, ID = -18 A, TJ = 125 °C 4.3 6.5
gFS Forward Transconductance VDS = -5 V, ID = -18 A 116 S
Ciss Input Capacitance VDS = -10 V, VGS = 0 V,
f = 1 MHz
8800 13200 pF
Coss Output Capacitance 1520 2280 pF
Crss Reverse Transfer Capacitance 1340 2010 pF
RgGate Resistance 6.2 Ω
td(on) Turn-On Delay Time VDD = -10 V, ID = -18 A,
VGS = -4.5 V, RGEN = 6 Ω
25 40 ns
trRise Time 77 122 ns
td(off) Turn-Off Delay Time 317 506 ns
tfFall Time 178 285 ns
QgTotal Gate Charge VDD = -10 V, ID = -18 A,
VGS = -4.5 V
87 122 nC
Qgs Gate to Source Charge 14 nC
Qgd Gate to Drain “Miller” Charge 24 nC
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = -18 A (Note 2) -0.7 -1.2 V
VGS = 0 V, IS = -2 A (Note 2) -0.6 -1.2
trr Reverse Recovery Time IF = -18 A, di/dt = 100 A/μs 38 61 ns
Qrr Reverse Recovery Charge 24 39 nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. bo ard of FR-4 material. R θJC is guaranteed by design while RθCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Pulse Id refers to Forward Bias Safe Operation Area.
a. 53 °C/W when mounted on a
1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
G
DF
DS
SF
SS
G
DF
DS
SF
SS
www.fairchildsemi.com
3
©2014 Fairchild Semiconductor Corporation
FDMC6686P Rev.C1
FDMC6686P P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
Figure 1.
0.0 0.5 1.0 1.5 2.0
0
50
100
150
200
VGS = -3 V
VGS = -1.8 V
VGS = -3.8 V
PULSE D URATION = 80 μs
DUTY CYCLE = 0.5% MA X
VGS = -2.5 V
VGS = - 4.5 V
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
0 50 100 150 200
0
1
2
3
VGS = -2.5 V
PULSE D U RATION = 80 μs
DUTY CYCLE = 0.5% MA X
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, D RAIN CURRENT (A)
VGS = -3 V VGS = -3.8 V
VGS = -1.8 V
VGS = -4.5 V
Normalized On- Resistance
vs Dr ain Cu rr en t a nd G at e V ol ta g e
Figure 3. Normalized On- Resistance
-75 -50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
ID = -18 A
VGS = -4.5 V
NORMALIZED
DRAIN TO SOURCE ON-R ESISTANCE
TJ, JUNCTION TEMPERATURE (oC)
vs Junction Te mperature Figure 4.
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0
5
10
15
20
TJ = 125 oC
ID = -18 A
TJ = 25 oC
-VGS, GATE TO SOURCE VOLTAGE (V)
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
PULSE D URATION = 80 μs
DUTY CYCLE = 0.5% MA X
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
0123
0
50
100
150
200
TJ = 150 oC
VDS = -5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% M AX
TJ = -55 oC
TJ = 25 oC
-ID, DRAIN CURRENT (A)
-VGS, GATE TO SOU RCE VOLTAG E (V)
Figure 6.
0.00.20.40.60.81.01.21.4
0.001
0.01
0.1
1
10
100
200
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
VGS = 0 V
-IS, REVERSE DRAIN CURRENT (A)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
Forward Voltage vs Source Current
www.fairchildsemi.com
4
©2014 Fairchild Semiconductor Corporation
FDMC6686P Rev.C1
FDMC6686P P-Channel PowerTrench® MOSFET
Figure 7.
04080120
0.0
1.5
3.0
4.5 ID = -18 A
VDD = -8 V
VDD = -10 V
-VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHA R GE (nC)
VDD = -1 2 V
Gate Charge Characteristics Figure 8.
0.1 1 10 20
100
1000
10000
50000
f = 1 MHz
VGS = 0 V
CAPACITANCE (pF)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
Capacitance vs Drain
to Source Voltage
Figure 9.
25 50 75 100 125 150
0
20
40
60
80
100
RθJC = 3.1 oC/W
VGS = -2.5 V
VGS = -4.5 V
-ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
Maximum Continuous Drain
Current vs Case Temperature Figure 10.
0.1 1 10 100
0.1
1
10
100
500
CURVE BENT TO
MEASURED DATA
10 us
1 ms
DC
10 ms
100 us
-ID, DRAIN CURRENT (A)
-VDS, DRAIN to SOURCE VOLTAGE (V)
TH IS AR EA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJC = 3.1 oC/W
TC = 25 oC
Forward Bi as Saf e
Operating Area
Figure 11. Single Pulse Maximu m Power Dissipation
Typical Characteristics TJ = 25 °C unless otherwise noted
10-5 10-4 10-3 10-2 10-1 1
10
100
1000
10000
P(PK), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJC = 3.1 oC/W
TC = 25 oC
t, PULSE WIDTH (sec)
www.fairchildsemi.com
5
©2014 Fairchild Semiconductor Corporation
FDMC6686P Rev.C1
FDMC6686P P-Channel PowerTrench® MOSFET
Figure 12. Junction-to-Case Transient Thermal Response Curve
10-5 10-4 10-3 10-2 10-1 1
0.001
0.01
0.1
1
2
SINGLE PULSE
DUTY CYCLE-DESCENDING ORDER
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
t, RECTANGULAR PULSE DURA TION (sec)
D = 0.5
0.2
0.1
0.0 5
0.0 2
0.0 1
NOTES:
ZθJC(t) = r(t) x RθJC
RθJC = 3.1 oC/W
Duty Cycle, D = t1 / t2
Peak TJ = PDM x ZθJC(t) + TC
PDM
t1t2
Typical Characteristics TJ = 25 °C unless otherwise noted
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
JEDEC MO-240, ISSUE A, VAR. BA,
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR
BURRS DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
E) DRAWING FILE NAME: MKT-PQFN08SREV1
8
1
5
4
41
8 5
LAND PATTERN
RECOMMENDATION
1 4
8 5
PKG
C
L
PKG
L
C
PKG L
C
L
C
SYM
PKG
C
L
A
B
SCALE: 2X
SEE
DETAIL A
3.40
3.20
3.40
3.20
1.95
0.65
0.37
0.27 (8X)
0.60
0.40
1.99
1.79
0.10 C A B
(0.34)
(2.27)(0.52 TYP)
0.25
0.15
0.80
0.70
0.10 C
0.08 C 0.05
0.00 C
SEATING
PLANE
2.37 MIN
(0.45)
(0.40)
(0.65)
2.15 MIN
0.70 MIN
0.42 MIN
(8X)
1.95
0.65
PIN 1
INDICATOR
(0.33) TYP
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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