Ly SGS-THOMSON MICROELECTRONICS T410 T435 HIGH PERFORMANCE TRIACS FEATURES ItRMsS = 4A Ag Ay VpRM = 400 V to 800 V Ss a SENSITIVE GATE : let < 10 ma @ s a HIGH COMMUTATION : (di/dt)c > 3.5 A/ms Al LA A2 102208 (Plastic) SOT 82 DESCRIPTION G (Plastic) The T410/ T435 high voltage TRIAC Families are high performance planar diffused PNPN de- vices glass passivated technology. AI Packaged either in TO 220 AB, SOT 82, SOT Al a2 194 and ISOWATT220 these products are in- A2 & SOT 194 G ISOWATT220 tented for all bi-directional switch applications. (Plastic) (Plastic) ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current TO 220 AB Te= 110C 4 A (360 conduction angle) SOT 194/SOT 82 ISOWATT220 Te = 100 C ltsm Non repetitive surge peak on-state current tp = 8.3 ms 35 A ( Tj initial = 25C ) tp = 10 ms 30 2 l2t value tp = 10 ms 45 Aes di/dt Critical rate of rise of on-state current Repetitive 10 A/us Gate supply : Iq = 100mA dig/dt = 1A/us F = 50 Hz Non 50 Repetitive Tstg Storage and operating junction temperature range - 40 to + 125 C Tj - 40 to +125 C TI Maximum lead temperature for soldering during 10 s at 4.5 mm 230 C from case Symbol Parameter T410 or T435 Unit -400 -600 -700 -800 VDRM Repetitive peak off-state voltage 400 600 700 800 Vv VRRM Tj = 125 C July 1991 1/6 2497410 / T435 THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-a) [Junction to ambient SOT 82 / SOT 194 100 C/W TO 220 AB 60 ISOWATT220 50 Rth (j-c} DC | Junction to case for DC SOT 82 / SOT 194 3.5 C/W TO 220 AB ISOWATT220 5.3 Rth (j-c) AC | Junction to case for 360 conduction angle] SOT 82 / SOT 194 2.6 Cw ( F= 50 Hz) TO 220 AB ISOWATT220 4 GATE CHARACTERISTICS (maximum values) Pa(aAy) = 1 W Pam= 40 W (tp= 20s) IGmM=4A(tp=20us) VGM = 16 V (tp = 20 ps). ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant Suffix Unit T410 | T435 IGT Vp=12V (DC) RL=33Q Tj=25C -ll-Hl MAX 10 35 mA VGT Vp=12V (DC) RL=332 Tj=25C VII MAX 1.5 Vap VpD=VpDRM AL=3.3kQ Tj=125C I-H-Ht MIN 0.2 tgt Vp=VoRM |G = 350mA Tj=25C (-4I-ill TYP 2 ys dig/dt = 1A/us ITw = 5.5A IL Ig=1.2 IGT Tj=25C I-t1-IH MAX 30 60 mA ly * IT= 100mA gate open Tj=25C MAX 15 35 mA VTm * ltw= 5.54 tp= 380ys Tj=25C MAX 1.75 v IDRM VpRM Rated Tj=25C MAX 0.01 mA I VeaRM Rated RRM R Tj=125C MAX 2 dV/dt * Linear slope up to VDRM = Tj=125C MIN 50 250 Vis Vp=67%VORM 400V / 600V gate open VDRM = 30 250 7O00V / 800V (di/dt)c * | dV/dt = 0.1V/us Tj=125C MIN 2.7 5.3 A/ms dV/dt = 20V/is MIN | 18 | 35 * For either polarity of electrode A2 voltage with reference to electrade A1. 2/6 250 k SGS-THOMSON JF icrortecrnomesORDERING INFORMATION T410 / T435 T 4 TRIAC PLANAR FAMILY Itams 4A let 10 MA/35 mA 10 - 800 - T PACKAGES T = TO 220 AB D = SOT 82 K = SOT 194 = ISOWATT220 Vorm / Vara 400V/600V/700V/800V Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50H7z). (Curves are cut off by (di/dt)c limitation) P (W) | J LAO Less 4 . 120 Le 3 cA | Ql: 60. is 27 Qs 30 | / 1 ' tims) (A) | 0 1 L oO 0.5 1 1.6 2 2.5 3 3.5 4 Fig.3 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tease) for different thermal resistances heatsink + contact (ISOWATT220). P (Ww) Tease (C) 100 5 wen 105 Sd A, \ 0 110 gt Rih o* cw 5Ccw | 10c/w-7 | 115 2 15 C/W 1f-_ 120 Tamb (C) pL it 125 0 20 40 60 80 100 120 140 k SGS-THOMSON Sf A SS OMSON Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tease) for different thermal resistances heatsink + contact (T0220 AB / SOT 82 / SOT 194). P (w) Tease (C) 6 110 4 . 115 Rth= 0 C/W. 3 5 C/W 10 15 C/W. 2 120 Tamb (C) QO 125 oO 20 40 60 80 100 120 Fig.4 : RMS on-state current versus case temperature. IT(RMS) (A) 5 TO 220 AB SOT 82 4 SOT 194 3 ISOWATT 220 2 oy 180 1 Tease(C) \ 1 i 1 9 20 40 60 80 100 120 140 3/6 251T410 / T435 Fig.5 : Thermal transient impedance junction to case Fig.6 : Relative variation of gate trigger current holding current versus junction temperature. and junction to ambient versus pulse duration. (2th j-a : TO220 AB only); (Zth j-c : SOT 82 / SOT 194 / TO 220 AB only) Zth { C/W) Igt Til -AnTj] gt t}- 25C in{Tj*25 CT) 1.0E+02 2.54 l 2 1.0E+01 Igt 1.5 PS 1 PSS 1.0E+00 h SH tr \-+4 p+] 0.8 t Tj CC) i 1 1 1 1.0E-01 TOE-03 1.0-02 10E-01 10E+00 1001 10*02 106+03 Fig.7 : Non Repetitive surge peak on-state current Fig.8 : Non repetitive surge peak on-state current for a pulse with width versus number of cycles. sinusoidal corresponding value of [2t. Iygm 6A? Irsm (A). It (A8) 30 Tj initial 25C 25 100 20 15 10 Number of cycles 1 10 100 1000 Fig.9 : On-state characteristics (maximum values). I ty (A) 100 Tj initial 25C Tj max Tj max Vto = 0.95V Rt *0.1400 VanatV? 1 2 3 4 6 4/6 Tj initial 25C 'Tsm 0 740-30-20-10 0 10 20 30 40 50 60 70 BO 90 100410120190 t s SGS-THOMSON IF incnocuecrnomes 252PACKAGE MECHANICAL DATA (in millimeters) SOT 82 Plastic T410 / T435 2.4min _[2.7max 1.2typ. 9 as 33 Se Cooling Method : C Marking : Type number Weight: 0.72g Polarity :N A Stud torque: NA PACKAGE MECHANICAL DATA (in millimeters) SOT 194 Plastic 2.7max | Lottyp. 4.2 ,yp. 2.4min Cooling Method : C Marking : Type number Weight: 0.689 Polarity : NA Stud torque :N A 5/6 MIGROELECTROMICS 2537410 / T435 PACKAGE MECHANICAL DATA (in millimeters) TO 220 AB Plastic 10.47 4.gimox 4377 -\ 127ive. 2.4 572 0.64 __+H}e Cooling Method : C Marking : Type number Weight : 29 Polarity :NA Stud torque :N A PACKAGE MECHANICAL DATA (in millimeters) ISOWATT220 Plastic 44 46 | 25 27 a | I lp; 24 0.4 27 0.7 2.40 | | 4.95 2.78 5.20 Cooling Method : C Marking : Type number Weight: 2.19 Polarity: NA Stud torque :NA = L3g, Scho 254TRIAC 6 A FAMILY SNUBBERLESS "H.C.T." INSULATED | UNINSULATED | SENSITIVITY Iat (mA) | Varnm Range | PACKAGE Ql an | am (v) BTA06-xxx BW BTBO6-xxx BW 50 50 50 400 to 800 TO220AB BTAQ6-xxx CW BTBO6-xxx CW 35 35 35 400 to 800 TO220AB T635-xxx W * 35 35 35 400 to 800 ISOWATT220 T635-xxx T * 35 35 35 400 to 800 TO220AB T635-xxx D * 35 35 35 400 to 800 SOT 82 T635-xxx K * 35 35 35 | 40010800 [SOT 194 LOGIC LEVEL "H.C.T." INSULATED | UNINSULATED | SENSITIVITY Igt (mA) | Vanm Range | PACKAGE Ql Ql Qi Vv BTAO6-xxx SW BTB06-xxx SW 10 10 10 400 to 700 TO220AB BTAO6-xxx TW BTBO6-xxx TW 5 5 5 400 to 700 TO220AB T610-xxx W * 10 10 10 400 to 800 ISOWATT220 T610-xxx T * 10 10 10 400 to 800 TO220AB T610-xxx D * 10 10 10 400 to 800 SOT 82 T610-xxx K * 10 10 10 400 to 800 SOT 194 SENSITIVE INSULATED | UNINSULATED | SENSITIVITY Iat (mA) | Vanm Range | PACKAGE at | aulamlaw (Vv) BTAQ6-xxx A BTBO6-xxx A 10 10 10 25 400 to 700 TO220AB BTA06-xxx S BTBO6-xxx S 10 10 10 10 400 to 700 TO220AB BTAQ6-xxx D BTB06-xxx D 5 5 5 10 400 to 700 TO220AB BTA06-xxx T | BTBO06-xxx T 5 5 5 5 400 to 700 TO220AB STANDARD INSULATED | UNINSULATED | SENSITIVITY It (mA) | Vanm Range | PACKAGE at} anlamlaiv (v) BTAQ6-xxx B BTBO6-xxx B 50 50 50 100. 400to 800 TO220AB BTA06-xxx C BTBO6-xxx C 25 25 25 50 | 400 to 800 TO220AB LIGHT DIMMERS INSULATED | UNINSULATED | SENSITIVITY Ict (mA) | Vanm Range | PACKAGE ai |/anjamlawv (v) BTAO6-xxx GP 50 50 50 75 400 to 600 TO220AB DEDICATED DEVICES INSULATED | UNINSULATED | AUTOMATIC VOLTAGE | Vanm Range | PACKAGE SWITCH (V) AVS08-CBI AVS08-CB | | | 500 TO220AB * In development H.C.T. (HIGH COMMUTATION TECHNOLOGY) i SGS-THOMSON VF icrostecrromes 255