BCR119WE6327XT - INFINEON TECHNOLOGIES AG

4N32, 4N33

www.vishay.com Vishay Semiconductors

Rev. 1.3, 30-Nov-17 1Document Number: 81865

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Optocoupler, Photodarlington Output, High Gain,

With Base Connection

DESCRIPTION

The 4N32 and 4N33 are optically coupled isolators with a

gallium arsenide infrared LED and a solicon photodarlington

sensor.

Switching can be achieved while maintaining a high degree

of isolation between driving and load circuits.

These optocouplers can be used to replace reed and

mercury relays with advantages of long life, high speed

switching and elimination of magnetic fields.

FEATURES

• Very high current transfer ratio, 500 % min.

• High isolation resistance, 1011 Ω typical

• Standard plastic DIP package

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

AGENCY APPROVALS

• UL1577, file no. E52744 system code H

• DIN EN 60747-5-2 (VDE 0884) / DIN EN 60747-5-5

(pending), available with option 1

• BSI IEC 60950; IEC 60065

•FIMKO

Note

• Additional options may be possible, please contact sales office

i179005_1

i179005

ORDERING INFORMATION

4N3#-X0##T

PART NUMBER PACKAGE OPTION TAPE AND

REEL

AGENCY CERTIFIED/PACKAGE CTR (%)

UL, BSI, FIMKO ≥ 500 ≥ 500

DIP-6 4N32 4N33

7.62 mm

DIP

4N32, 4N33

www.vishay.com Vishay Semiconductors

Rev. 1.3, 30-Nov-17 2Document Number: 81865

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability

(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through

hole devices (DIP)

Notes

• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements

(1) Indicates JEDEC® registered values

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

input

Reverse voltage VR3V

Forward current IF60 mA

Power dissipation Pdiss 100 mW

Derate linearly From 55 °C 1.33 mW/°C

output

Collector emitter breakdown voltage BVCEO 30 V

Emitter base breakdown voltage BVEBO 8V

Collector base breakdown voltage BVCBO 50 V

Emitter collector breakdown voltage BVECO 5V

Collector (load) current IC100 mA

Power dissipation Pdiss 150 mW

Derate linearly 2mW/°C

coupler

Total dissipation Ptot 250 mW

Derate linearly 3.3 mW/°C

Isolation test voltage (between emitter 1 s VISO 5300 VRMS

Leakage path 7mm min.

Air path 7mm min.

Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω

VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω

Storage temperature Tstg -55 to +150 °C

Operating temperature Tamb -55 to +100 °C

Lead soldering time (1) At 260 °C 10 s

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

input

Forward voltage IF = 50 mA VF- 1.25 1.5 V

Reverse current VR = 3 V IR- 0.1 100 μA

Capacitance VR = 0 V CO-25 pF

output

Collector emitter breakdown voltage (1) IC = 100 μA, IF = 0 BVCEO 30 - - V

Collector base breakdown voltage (1) IC = 100 μA, IF = 0 BVCBO 50 - - V

Emitter base breakdown voltage (1) IC = 100 μA, IF = 0 BVEBO 8--V

Emitter collector breakdown voltage (1) IC = 100 μA, IF = 0 BVECO 510- V

Collector emitter leakage current VCE = 10 V, IF = 0 ICEO - 1 100 nA

IC = 0.5 mA, VCE = 5 V hFE 13 - -

coupler

Collector emitter saturation voltage VCEsat -1-V

Coupling capacitance - 1.5 - pF

4N32, 4N33

www.vishay.com Vishay Semiconductors

Rev. 1.3, 30-Nov-17 3Document Number: 81865

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

• As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with

the safety ratings shall be ensured by means of protective circuits

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Normalized Non-Saturated and Saturated CTRCE vs.

LED Current

Fig. 2 - Normalized Non-Saturated and Saturated Collector Emitter

Current vs. LED Current

CURRENT TRANSFER RATIO

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Current transfer ratio VCE = 10 V, IF = 10 mA CTR 500 - - %

SWITCHING CHARACTERISTICS

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Turn-on time VCC = 10 V, IC = 50 mA ton --5μs

Turn-off time IF = 200 mA, RL = 180 Ωtoff - - 100 μs

SAFETY AND INSULATION RATINGS

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Climatic classification According to IEC 68 part 1 - 55 / 100 / 21 -

Comparative tracking index CTI 175 - 399

VIOTM 8000 - - V

VIORM 890 - - V

PSO - - 700 mW

ISI - - 400 mA

TSI - - 175 °C

Creepage distance Standard DIP-6 7 - - mm

Clearance distance Standard DIP-6 7 - - mm

Insulation thickness, reinforced rated Per IEC 60950 2.10.5.1 0.4 - - mm

i4n32-33_02

0.1 1 10 100 1000

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VCE = 5 V

IF - LED Current (mA)

NCTRCE - Normalized CTRCE

VCE = 5 V

IF = 10 mA

TA = 25 °C

Normalized to:

VCE = 1 V

i4n32-33_03

100

10.1

0.001

0.01

0.1

IF - LED Current (mA)

NICE - Normalized ICE

VCE = 5 V

IF = 10 mA

TA = 25 °C

Normalized to: VCE = 5 V

VCE = 1 V

4N32, 4N33

www.vishay.com Vishay Semiconductors

Rev. 1.3, 30-Nov-17 4Document Number: 81865

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 3 - Normalized Collector Base Photocurrent vs.

LED Current

Fig. 4 - Non-Saturated and Saturated hFE vs.

Base Current

Fig. 5 - Low to High Propagation Delay vs.

Collector Load Resistance and LED Current

Fig. 6 - High to Low Propagation Delay vs.

Collector Load Resistance and LED Current

Fig. 7 - Switching Waveform and Switching Schematic

i4n32-33_04

0.1 1 10 100

0.001

0.01

0.1

IF = LED Current (mA)

NICB - Normalized ICB

VCB = 3.5 V

IF = 10 mA

TA = 25 °C

Normalized to:

i4n32-33_05

0.01 0.1 1 10 100

2000

4000

6000

8000

10 000

VCE = 5 V

VCE = 1 V

Ib - Base Current (µA)

hFE - Forward Transfer Gain

TA = 25 °C

i4n32-33_06

0101520

TA = 25 °C, VCC = 5 V

VTH = 1.5 V

IF - LED Current (mA)

tpLH - Low/High Propagation

Delay (µs)

1 kΩ

220 Ω

470 Ω

100 Ω

i4n32-33_07

0101520

IF - LED Current (mA)

TA = 25 °C

VCC = 5 V

VTH = 1.5 V

tpHL - High/Low Propagation

Delay (µs)

1 kΩ

100 Ω

i4n32-33_08

tStF

tPHL

tPLH

VTH = 1.5 V

VCC

4N32, 4N33

www.vishay.com Vishay Semiconductors

Rev. 1.3, 30-Nov-17 5Document Number: 81865

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PACKAGE DIMENSIONS in millimeters

DIP-6 Package Dimensions

PACKAGE MARKING

Notes

• Example marking for 4N32

• Only options 1, and 7 reflected in the package marking

• The VDE logo is only marked on option 1 parts

• Tape and reel suffix (T) is not part of the package marking

i178004

0.25 typ.

2.95 ± 0.5

3.555 ± 0.255

0.8 min.

7.62 typ.

0.85 ± 0.05

2.54 typ.

1 min.

0.5 ± 0.05

6.4 ± 0.1

8.6 ± 0.1

Pin one ID

18°

3° to 9°

7.62 to 8.81

4° typ.

ISO method A

1.2 ± 0.1

4N32

V YWW H 68

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www.vishay.com Vishay

Revision: 08-Feb-17 1Document Number: 91000

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