© Semiconductor Components Industries, LLC, 2012
February, 2012 Rev. 4
1Publication Order Number:
MBR60H100CT/D
MBR60H100CTG,
MBRB60H100CTT4G,
NRVBB60H100CTT4G
SWITCHMODE
Power Rectifier
100 V, 60 A
Features and Benefits
Low Forward Voltage: 0.72 V @ 125°C
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
60 A Total (30 A Per Diode Leg)
These are PbFree Devices
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
Applications
Power Supply Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V0 @ 0.125 in
Weight (Approximately): 1.9 Grams (TO220)
1.7 Grams (D2PAK)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Rating: Human Body Model = 3B
Machine Model = C
MAXIMUM RATINGS
Please See the Table on the Following Page
TO220AB
CASE 221A
3
4
1
SCHOTTKY BARRIER
RECTIFIER
60 AMPERES, 100 VOLTS
1
3
2, 4
2
MARKING
DIAGRAM
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Device Package Shipping
ORDERING INFORMATION
MBR60H100CTG TO220
(PbFree)
50 Units/Rail
AYWW
B60H100G
A K A
A = Assembly Location
Y = Year
WW = Work Week
B60H100 = Device Code
G = PbFree Package
AKA = Polarity Designator
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MBRB60H100CTT4G D2PAK
(PbFree)
800/
Tape & Reel
D2PAK
CASE 418AJ
STYLE 3
AYWW
B60H100G
AKA
NRVBB60H100CTT4G D2PAK
(PbFree)
800/
Tape & Reel
MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G
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2
MAXIMUM RATINGS (Per Diode Leg)
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100 V
Average Rectified Forward Current
(TC = 155°C) Per Diode
Per Device
IF(AV)
30
60
A
Peak Repetitive Forward Current
(Square Wave, 20 kHz, TC = 151°C)
IFRM 60 A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM 350 A
Operating Junction Temperature (Note 1) TJ+175 °C
Storage Temperature Tstg *65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms
Controlled Avalanche Energy (see test conditions in Figures 9 and 10) WAVAL 400 mJ
ESD Ratings: Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Thermal Resistance JunctiontoCase (Min. Pad)
JunctiontoAmbient (Min. Pad)
RqJC
RqJA
1.0
70
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic Symbol Min Typ Max Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 30 A, TJ = 25°C)
(iF = 30 A, TJ = 125°C)
(iF = 60 A, TJ = 25°C)
(iF = 60 A, TJ = 125°C)
vF
0.80
0.68
0.93
0.81
0.84
0.72
0.98
0.84
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TJ = 125°C)
(Rated DC Voltage, TJ = 25°C)
iR
2.0
0.0013
10
0.01
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G
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3
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
IR, MAXIMUM REVERSE CURRENT (AMPS)
IR, REVERSE CURRENT (AMPS)
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
200
VR, REVERSE VOLTAGE (VOLTS)
1E01
1E02
1E03
1E06
1E08
40
TJ = 125°C
TJ = 150°C
TJ = 25°C
Figure 5. Current Derating, Case Per Leg Figure 6. Current Derating, Ambient Per Leg
60 80 100
1E07
1E05
1E04
200
VR, REVERSE VOLTAGE (VOLTS)
1E01
1E02
1E03
1E06
1E08
40
TJ = 125°C
TJ = 150°C
TJ = 25°C
60 80 100
1E07
1E05
1E04
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.2 0.4
1.0
0.6 0.8
0.1
i , INSTANTANEOUS FORWARD CURRENT (AMP
S
F
25°C
TJ = 150°C
100
10
1.0
125°C
0.1 0.3 0.5 0.7 0.9 1.20.0
175°C
TC, CASE TEMPERATURE (C°)
135
4.0
0
dc
SQUARE WAVE
145 155 160
I , AVERAGE FORWARD CURRENT (AMPS)
F (AV)
12
16
8.0
140 150 170 175
165
24
20
130 180
I , AVERAGE FORWARD CURRENT (AMPS)
F (AV)
TA, AMBIENT TEMPERATURE (°C)
05025 75
2.0
4.0
6.0
8.0
10
12
14
16
0100 125 150 175
SQUARE WAVE
RATED VOLTAGE APPLIED
RqJA = 16° C/W
dc
RqJA = 70° C/W
(NO HEATSINK)
dc
18
20
22
24
1.1
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.2 0.4
1.0
0.6 0.8
0.1
i , INSTANTANEOUS FORWARD CURRENT (AMP
S
F
25°C
TJ = 150°C
100
10
1.0
125°C
0.1 0.3 0.5 0.7 0.9 1.20.0
175°C
1.1
28
36
40
32
48
44
26
MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G
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4
C, CAPACITANCE (pF)
0
VR, REVERSE VOLTAGE (VOLTS)
100
10
40 80
TJ = 25°C
Figure 7. Forward Power Dissipation
10020 60
10000
1000
Figure 8. Capacitance
P , AVERAGE FORWARD POWER DISSIPATION (WATT
S
F (AV)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
04 12816
24
16
0
8
4
12
SQUARE WAVE
20 24 28
20
28
dc
TJ = 175°C
56
48
32
40
36
44
52
60
32 36 4440 48 52 56 60
MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G
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5
MERCURY
SWITCH
VD
ID
DUT
10 mH COIL
+VDD
IL
S1
BVDUT
ILID
VDD
t0t1t2t
Figure 9. Test Circuit Figure 10. CurrentVoltage Waveforms
The unclamped inductive switching circuit shown in
Figure 9 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
W
AVAL [1
2LI 2
LPK ǒBVDUT
BVDUTVDD Ǔ
W
AVAL [1
2LI 2
LPK
EQUATION (1):
EQUATION (2):
MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G
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6
PACKAGE DIMENSIONS
D2PAK3 (TO263, 3LEAD)
CASE 418AJ
ISSUE A
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D0.330 0.380 8.38 9.65
E0.380 0.420 9.65 10.67
A0.160 0.190 4.06 4.83
b0.020 0.039 0.51 0.99
c2 0.045 0.065 1.14 1.65
e0.100 BSC 2.54 BSC
A1 0.000 0.010 0.00 0.25
c0.012 0.029 0.30 0.74
L0.070 0.110 1.78 2.79
H0.575 0.625 14.60 15.88
L2 −−−− 0.070 −−−− 1.78
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. CHAMFER OPTIONAL
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH. MOLD FLASH SHALL NOT EXCEED 0.005
PER SIDE. THESE DIMENSIONS ARE MEASURED
AT THE OUTERMOST EXTREMES OF THE
PLASTIC BODY AT DATUM H.
5. THERMAL PAD CONTOUR IS OPTIONAL WITHIN
DIMENSIONS E, L1, D1 AND E1.
6. OPTIONAL MOLD FEATURE
E1 0.245 −−−− 6.22 −−−−
L1 −−−− 0.066 −−−− 1.68
D1 0.260 −−−− 6.60 −−−−
L3 0.010 BSC 0.25 BSC
M08 08°° °°
E
D
H
L1
b
e
A1 B
H
L
MDETAIL C
SEATING
PLANE
A
2X
M
A
M
0.10 B
c2
c
A
BSEATING
PLANE
DETAIL C
VIEW AA
SIDE VIEW
TOP VIEW
E2
L2
A
A
VIEW AA
E1
D1
L1
OPTIONAL CONSTRUCTIONS
L3
GAUGE
PLANE
NOTE 3
M
A
M
0.10 B
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
RECOMMENDED
0.366
0.100
DIMENSIONS: INCHES
PITCH
2X
0.653
0.063
2X
0.436
0.169
SOLDERING FOOTPRINT*
NOTE 6
MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G
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7
PACKAGE DIMENSIONS
TO220
CASE 221A09
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
T
C
S
T
U
R
J
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MBR60H100CT/D
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
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