MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G SWITCHMODETM Power Rectifier 100 V, 60 A http://onsemi.com SCHOTTKY BARRIER RECTIFIER 60 AMPERES, 100 VOLTS Features and Benefits * * * * * * * Low Forward Voltage: 0.72 V @ 125C Low Power Loss/High Efficiency High Surge Capacity 175C Operating Junction Temperature 60 A Total (30 A Per Diode Leg) These are Pb-Free Devices NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 2, 4 3 MARKING DIAGRAM 4 TO-220AB CASE 221A Applications * Power Supply - Output Rectification * Power Management * Instrumentation 1 2 AYWW B60H100G AKA 3 Mechanical Characteristics: * Case: Epoxy, Molded * Epoxy Meets UL 94 V-0 @ 0.125 in * Weight (Approximately): 1.9 Grams (TO-220) * * * D2PAK CASE 418AJ STYLE 3 1.7 Grams (D2PAK) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds ESD Rating: Human Body Model = 3B Machine Model = C MAXIMUM RATINGS A Y WW B60H100 G AKA AYWW B60H100G AKA = Assembly Location = Year = Work Week = Device Code = Pb-Free Package = Polarity Designator ORDERING INFORMATION Please See the Table on the Following Page Package Shipping MBR60H100CTG TO-220 (Pb-Free) 50 Units/Rail MBRB60H100CTT4G D2PAK (Pb-Free) 800/ Tape & Reel NRVBB60H100CTT4G D2PAK (Pb-Free) 800/ Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2012 February, 2012 - Rev. 4 1 Publication Order Number: MBR60H100CT/D MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current (TC = 155C) Per Diode Per Device IF(AV) Peak Repetitive Forward Current (Square Wave, 20 kHz, TC = 151C) IFRM 60 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 350 A Operating Junction Temperature (Note 1) TJ +175 C Storage Temperature Tstg *65 to +175 C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms 400 mJ > 400 > 8000 V Controlled Avalanche Energy (see test conditions in Figures 9 and 10) A 30 60 WAVAL ESD Ratings: Machine Model = C Human Body Model = 3B Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RqJC RqJA 1.0 70 C/W Maximum Thermal Resistance - Junction-to-Case (Min. Pad) - Junction-to-Ambient (Min. Pad) ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 2) (iF = 30 A, TJ = 25C) (iF = 30 A, TJ = 125C) (iF = 60 A, TJ = 25C) (iF = 60 A, TJ = 125C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TJ = 125C) (Rated DC Voltage, TJ = 25C) iR 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. http://onsemi.com 2 Min Typ Max - - - - 0.80 0.68 0.93 0.81 0.84 0.72 0.98 0.84 - - 2.0 0.0013 10 0.01 Unit V mA i , INSTANTANEOUS FORWARD CURRENT (AMPS F i , INSTANTANEOUS FORWARD CURRENT (AMPS F MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G 100 175C 10 TJ = 150C 125C 1.0 25C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 100 175C 10 TJ = 150C 1.0 25C 0.1 0.0 0.1 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) IR, MAXIMUM REVERSE CURRENT (AMPS) 1E-03 TJ = 125C 1E-05 TJ = 25C 1E-07 20 60 40 80 100 1.0 1.1 TJ = 125C 1E-03 1E-04 1E-05 TJ = 25C 1E-06 1E-07 1E-08 0 20 40 60 80 Figure 4. Maximum Reverse Current , AVERAGE FORWARD CURRENT (AMPS) SQUARE WAVE 28 24 20 16 12 8.0 140 145 150 155 160 165 170 1.2 TJ = 150C Figure 3. Typical Reverse Current dc 135 0.9 VR, REVERSE VOLTAGE (VOLTS) 32 4.0 0 130 0.8 VR, REVERSE VOLTAGE (VOLTS) 48 44 40 36 0.6 0.7 1E-02 F (AV) I F (AV) , AVERAGE FORWARD CURRENT (AMPS) 1E-08 0 1E-01 175 I IR, REVERSE CURRENT (AMPS) TJ = 150C 1E-06 0.4 0.5 Figure 2. Maximum Forward Voltage 1E-01 1E-04 0.2 0.3 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 1E-02 125C 180 26 24 22 20 18 16 14 12 10 8.0 6.0 4.0 2.0 0 RATED VOLTAGE APPLIED RqJA = 16 C/W RqJA = 70 C/W (NO HEATSINK) dc SQUARE WAVE dc 0 TC, CASE TEMPERATURE (C) 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Figure 5. Current Derating, Case Per Leg Figure 6. Current Derating, Ambient Per Leg http://onsemi.com 3 100 175 60 56 52 48 44 40 36 32 28 24 20 16 12 8 4 0 10000 TJ = 25C TJ = 175C SQUARE WAVE dc C, CAPACITANCE (pF) P , AVERAGE FORWARD POWER DISSIPATION (WATTS F (AV) MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G 1000 100 10 0 4 8 12 16 20 24 28 32 36 40 44 48 52 56 60 0 IF(AV), AVERAGE FORWARD CURRENT (AMPS) 20 40 60 80 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Forward Power Dissipation Figure 8. Capacitance http://onsemi.com 4 100 MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G +VDD IL 10 mH COIL BVDUT VD MERCURY SWITCH ID ID IL DUT S1 VDD t0 Figure 9. Test Circuit t1 t2 t Figure 10. Current-Voltage Waveforms elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). The unclamped inductive switching circuit shown in Figure 9 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive EQUATION (1): BV 2 DUT W [ 1 LI LPK AVAL 2 V BV DUT DD EQUATION (2): 2 W [ 1 LI LPK AVAL 2 http://onsemi.com 5 MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G PACKAGE DIMENSIONS D2PAK-3 (TO-263, 3-LEAD) CASE 418AJ ISSUE A B E2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CHAMFER OPTIONAL 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.005 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AT DATUM H. 5. THERMAL PAD CONTOUR IS OPTIONAL WITHIN DIMENSIONS E, L1, D1 AND E1. 6. OPTIONAL MOLD FEATURE A A E SEATING PLANE L1 c2 NOTE 3 A D1 L1 D H DETAIL C E1 0.10 L2 e 2X TOP VIEW b 0.10 B A B SEATING PLANE M A c NOTE 6 M VIEW A-A SIDE VIEW M B A M H GAUGE PLANE L3 A1 L M DETAIL C DIM A A1 b c c2 D D1 E E1 e H L L1 L2 L3 M VIEW A-A OPTIONAL CONSTRUCTIONS RECOMMENDED SOLDERING FOOTPRINT* 0.436 0.366 0.653 2X 0.169 2X 0.063 0.100 PITCH DIMENSIONS: INCHES *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 INCHES MIN MAX 0.160 0.190 0.000 0.010 0.020 0.039 0.012 0.029 0.045 0.065 0.330 0.380 0.260 ---- 0.380 0.420 0.245 ---- 0.100 BSC 0.575 0.625 0.070 0.110 ---- 0.066 ---- 0.070 0.010 BSC 0 8 MILLIMETERS MIN MAX 4.06 4.83 0.00 0.25 0.51 0.99 0.30 0.74 1.14 1.65 8.38 9.65 6.60 ---- 9.65 10.67 6.22 ---- 2.54 BSC 14.60 15.88 1.78 2.79 ---- 1.68 ---- 1.78 0.25 BSC 0 8 MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AF -T- B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ANODE CATHODE ANODE CATHODE SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 http://onsemi.com 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MBR60H100CT/D