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Complementary silicon power transistors.
The MJ15004 powerBaseTM power transistors designed for high power audio, disk
head positioners and other linear applications.
Features:
•High safe operating area (100% tested) - 5.0A at 50V.
•For low distortion complementary designs.
•High DC current gain = hFE = 25 (minimum) at IC= 5A dc.
•Pb-free packages.
(TO-3)
Style 1:
Pin 1. Base
2. Emitter
Collector (Case)
20 Ampere Darlington
Power Transistors
Complementary Silicon
140 Volts, 250 Watts
(TO-3)
Case 1-07
Style 1
Dimensions Minimum Maximum
A1.550 (39.37) Reference
B - 1.050 (26.67)
C 0.250 (6.35) 0.335 (8.51)
D0.038 (0.97) 0.043 (1.09)
E0.055 (1.40) 0.070 (1.77)
G0.430 (10.92) BSC
H0.215 (5.46) BSC
K0.440 (11.18) 0.480 (12.19)
L0.665 (16.89) BSC
N - 0.830 (21.08)
Q0.151 (3.84) 0.165 (4.19)
U1.187 (30.15) BSC
V0.131 (3.33) 0.188 (4.77)
Dimensions : Inches (Millimetres)
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Rating Symbol Value Unit
Collector-Emitter Voltage VCEO
140
V dcCollector-Base Voltage VCBO
Emitter-Base Voltage VEBO 5
Collector Current-Continuous IC20
Adc
Base Current-Continuous IB5
Emitter Current-Continuous IE25
Total Power Dissipation at TC= 25°C
Derate above 25°C PD250
1.43
W
W/°C
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
Maximum Ratings
Characteristics Symbol Maximum Unit
Thermal Resistance, Junction-to-Case RθJC 0.70 °C/W
Maximum Lead Temperature for Soldering
Purposes 1/16 inches from Case for ≤10 seconds TL265 °C
Thermal Characteristics
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual
stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional
operation is not implied, damage may occur and reliability may be affected.
Electrical Characteristics (TC= 25°C unless otherwise noted)
Characteristic Symbol Minimum Maximum Unit
Off Characteristics
Collector-Emitter Sustaining Voltage (1)
(lC = 200mA dc, lB= 0) VCEO (sus) 140 - V dc
Collector Cut off Current
(VCE = 140V dc, VBE (off) = 1.5V dc)
(VCE = 140V dc, VBE (off) = 1.5V dc, TC= 150°C)
ICEX - 100
2
µAdc
mA dc
Collector Cut off Current
(VCE = 140V dc, IB= 0) ICEO - 250
µAdc
Emitter Cut off Current
(VEB = 5V dc, IC= 0) IEBO - 100
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Electrical Characteristics (TC= 25°C unless otherwise noted)
Second Breakdown
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50V dc, t = 1s (non repetitive)
(VCE = 100V dc, t = 1s (non repetitive)
IS/b 5.0
1.0
-
-
Adc
On Characteristics
DC Current Gain
(lC= 5A dc, VCE = 2V dc hFE 25 150 -
Collector-Emitter Saturation Voltage
(lC= 5A dc, IB= 0.5A dc) VCE (sat) - 1.0
V dc
Base-Emitter On Voltage
(lC= 5A dc, VCE = 2V dc) VBE (on) - 2.0
Dynamic Characteristics
Current-Gain Bandwidth Product
(IC= 0.5A dc, VCE = 10V dc, ftest = 0.5MHz) fT2.0 - MHz
Output Capacitance
(VCB = 10V dc, IE= 0, ftest = 1MHz) Cob - 1000 pF
IC, Collector Current (Amperes)
Active Region DC Safe Operating Area
VCE, Collector-Emitter Voltage (Volts)
There are two limitations on the power handling ability of a transistor:
average junction temperature and second breakdown. Safe operating
area curves indicate IC- VCE limits of the transistor that must be
observed for reliable operation; i.e., the transistor must not be
subjected to greater dissipation than the curves indicate.
The data is based on TJ (pk) = 200°C; TCis variable depending on
conditions. At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limitations
imposed by second breakdown.
1. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2%.
Part Number Table
Description Part Number
Transistor, PNP, TO-3 MJ15004
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