2N5306 Transistors
NPN Darlington Transistor
Military/High-RelN
V(BR)CEO (V)25
V(BR)CBO (V)25
I(C) Max. (A)300m
Absolute Max. Power Diss. (W)400m
Maximum Operating Temp (øC)150þ
I(CBO) Max. (A)100n
@V(CBO) (V) (Test Condition)
h(FE) Min. Current gain.7.0k
h(FE) Max. Current gain.70k
@I(C) (A) (Test Condition)2.0m
@V(CE) (V) (Test Condition)5.0
f(T) Min. (Hz) Transition Freq60M
@I(C) (A) (Test Condition)
@V(CE) (V) (Test Condition)
V(CE)sat Max. (V)
@I(C) (A) (Test Condition)
@I(B) (A) (Test Condition)
t(d) Max. (s) Delay time.
t(r) Max. (s) Rise time
t(on) Max. (s) On time.
t(s) Max. (s) Storage time.
t(f) Max. (s) Fall time.
t(off) Max. (s) Off time
Semiconductor MaterialSilicon
Package StyleTO-98
Mounting StyleT
Pinout Equivalence Code3-1
Ckt. (Pinout) NumberTR00300001
Description