© 2002 IXYS All rights reserved
TO-247 AD
G = Gate, D = Drain,
S = Source, TAB = Drain
D (TAB)
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C -100 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ-100 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C -36 A
IDM TC= 25°C, pulse width limited by TJ-144 A
IAR TC= 25°C -36 A
EAR TC= 25°C30mJ
PDTC= 25°C 180 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
MdMounting torque 1.13/10 Nm/lb.in.
Weight 6g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = -250 µA -100 V
VGS(th) VDS = VGS, ID = -250 µA -3.0 -5.0 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = 0.8 VDSS TJ = 25°C -25 µA
VGS = 0 V TJ = 125°C-1mA
RDS(on) VGS = -10 V, ID = 0.5 ID25 75 mΩ
Features
•International standard package
JEDEC TO-247 AD
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance (<5 nH)
- easy to drive and to protect
Applications
•High side switching
•Push-pull amplifiers
•DC choppers
•Automatic test equipment
Advantages
•Easy to mount with 1 screw
(isolated mounting screw hole)
•Space savings
•High power density
98908 (2/02)
P-Channel Enhancement Mode
Avalanche Rated
Standard Power MOSFET IXTH 36P10
Advance Technical Information
VDSS = -100 V
ID25 = -36 A
RDS(on) = 75m
ΩΩ
ΩΩ
Ω
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXTH 36P10
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-247 AD Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
1 2 3
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = -10 V; ID = ID25, pulse test 6 12 S
Ciss 2800 pF
Coss VGS = 0 V, VDS = -25 V, f = 1 MHz 1100 pF
Crss 490 pF
td(on) 35 ns
trVGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 37 ns
td(off) RG = 4.7 Ω (External) 65 ns
tf28 ns
Qg(on) 95 nC
Qgs VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 27 nC
Qgd 40 nC
RthJC 0.65 K/W
RthCS 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 -36 A
ISM Repetitive; pulse width limited by TJM -144 A
VSD IF = IS, VGS = 0 V, -3 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = IS, di/dt = 100 A/µs, VR = -50 V 180 ns
