Supertex inc.
Supertex inc.
www.supertex.com
Doc.# DSFP-TP2104
B081313
TP2104
Pin Conguration
Product Marking
TO-236AB (SOT-23)
P1LW W = Code for week sealed
= “Green” Packaging
DRAIN
SOURCE
GATE GATE
SOURCE
DRAIN
TO-92
TO-236AB (SOT-23)
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
SiTP
2104
YYWW
TO-92
Features
►High input impedance and high gain
►Low power drive requirement
►Ease of paralleling
►Low CISS and fast switching speeds
►Excellent thermal stability
►Integral source-drain diode
►Free from secondary breakdown
Applications
►Logic level interfaces - ideal for TTL and CMOS
►Solid state relays
►Analog switches
►Power management
►Telecom switches
Package may or may not include the following marks: Si or
Package may or may not include the following marks: Si or
General Description
This low threshold, enhancement-mode (normally-off) transistor
utilizes a vertical DMOS structure and Supertex’s well-
proven, silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities of
bipolar transistors and the high input impedance and positive
temperature coefcient inherent in MOS devices. Characteristic
of all MOS structures, this device is free from thermal runaway
and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
P-Channel Enhancement-Mode
Vertical DMOS FET
Absolute Maximum Ratings
Parameter Value
Drain-to-source voltage BVDSS
Drain-to-gate voltage BVDGS
Gate-to-source voltage ±20V
Operating and storage temperature -55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Ordering Information
Part Number Package Option Packing
TP2104K1-G TO-236AB (SOT-23) 3000/Reel
TP2104N3-G 3-Lead TO-92 1000/Bag
TP2104N3-G P002
3-Lead TO-92 2000/Reel
TP2104N3-G P003
TP2104N3-G P005
TP2104N3-G P013
TP2104N3-G P014
Product Summary
BVDSS/BVDGS
RDS(ON)
(max)
VGS(th)
(max)
-40V 6.0Ω-2.0V
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Typical Thermal Resistance
Package θja
TO-236AB (SOT-23) 203OC/W
TO-92 132OC/W