Rev. A/AH
2008
-
06
-
13
TIP100/101
/
102
TAITRON COMPONEN
T
S INCORPORATED www.taitroncomponents.com
Page 1
of 3
Tel: (800)
-
TAITRON (800)
-
824
-
8766 (661)
-
257
-
6060
Fax: (800)-TAITFA (800)-824-8329 (661)-257-6415
Darlin
g
ton Power Transistors
(
NPN
)
Darlington Power Transistors (NPN)
Features
• Designed for general-purpose amplifier and low speed
switching applications
• RoHS Compliant
Mechanical Data
Case: TO-220, Plastic Package
Terminals: Solderable per MIL-STD-202, Method 208
Weight: 0.08 ounces, 2.24 grams
Maximum Ratings (T
Ambient
=25ºC unless noted otherwise)
Symbol Description TIP100 TIP101 TIP102 Unit
VCBO Collector-Base Voltage 60 80 100 V
VCEO Collector-Emitter Voltage 60 80 100 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current Continuous 8.0 A
ICM Collector Current Peak 15 A
IB Base Current 1.0 A
Power Dissipation upto TC=25°C 80 W
Power Dissipation upto TA=25°C 2.0 W
PD
Power Dissipation Derate above TA=25°C 16 mW/° C
RθJA Thermal Resistance from Junction to Ambient in Free Air 62.5 ° C /W
RθJC Thermal Resistance from Junction to Case 1.56 ° C /W
TJ, TSTG Operating Junction and Storage Temperature Range -65 to +150 ° C
TO-220
Rev. A/AH
2008
-
06
-
13
TIP100/101
/
102
Darlington Power Transistors (NPN)
www.taitroncomponents.com Page 2
of 4
Electrical Characteristics (T
Ambient
=25ºC unless noted otherwise)
Symbol Description Min. Max. Unit Conditions
1000 20000 VCE=4V, IC=3A
*hFE D.C. Current Gain
200 -
VCE=4V, IC=8A
TIP100 60 - V
TIP101 80 - V
*VCEO(sus) Collector-Emitter Sustaining
Voltage
TIP102 100 - V
IC=30mA, IB=0
- 2.0 V
IC=3A, IB=6mA
*VCE(sat) Collector-Emitter Saturation Voltage
- 2.5 V
IC=8A, IB=80mA
*VBE(on) Base-Emitter On Voltage - 2.8 V IC=8A, VCE=4V
TIP100 - 50 VCE=30V, IB=0
TIP101 - 50 VCE=40V, IB=0 ICEO Collector-Emitter Cut-off
Current
TIP102 - 50
μA
VCE=50V, IB=0
TIP100 - 50 VCB=60V, IE=0
TIP101 - 50 VCB=80V, IE=0 ICBO Collector-Base Cut-off
Current
TIP102 - 50
μA
VCB=100V, IE=0
IEBO Emitter-Base Cut-off Current - 8.0 mA VEB=5V, IC=0
*VF Forward Voltage of Commutation Diode - 6.0 V IF=IC=10A, IB=0
*Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Rev. A/AH
2008
-
06
-
13
TIP100/101
/
102
Darlington Power Transistors (NPN)
www.taitroncomponents.com Page 3
of 4
Dimensions in inch (mm)
TO-220
Rev. A/AH
2008
-
06
-
13
TIP100/101
/
102
Darlington Power Transistors (NPN)
www.taitroncomponents.com Page 4
of 4
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: taitron@taitroncomponents.com
Http://www.taitroncomponents.com
TAITRON COMPONENTS MEXICO, S.A .DE C.V.
BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P.
42970 MEXICO
Tel: +52-55-5560-1519
Fax: +52-55-5560-2190
TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA
RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL
Tel: +55-11-5574-7949
Fax: +55-11-5572-0052
TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA
Tel: +86-21-5424-9942
Fax: +86-21-5424-9931
