K = C SEMICONDUCTOR KID65001APV/AFV ~ TECHNICAL DATA KID65004APV/AFV BIPOLAR DIGITAL INTEGRATED CIRCUIT 7 CIRCUIT DARLINGTON TRANSISTOR ARRAY FEATURES W * Output Current : 500mA Max. - . . . . . [ | | \ * High Sustaining Voltage Outputs : 50V Min. TTT Low > Output Clamp Diodes 4 * Inputs Compatible With Various Types of Logic. o " a lr ~l\e * PKG Type APV : DIP-16Pin, AFV : FLP-16Pin TYPE INPUT RESISTOR DESIGNATION A DIM | MILLIMETERS A 19.34 0.2 KID65001 APV/AFV No (External) General Purpose Soon ons , ol ID65002APV/A Zener Diode 14~95 . a s 00 MN KID65002APV/AFV TV +105k 2 5V P-MOS . serosa ry ST 3 L 3.340.3 KID65003APV/AFV 2.7k TTL, 5V C-MOS P 2.54 T |0.25+0.1/0.05 KID65004APV/AFV 10.5k Q 6~15V P-MOS, C-MOS ef DESCRIPTION: The KID65001APV/AFV Series are high-voltage, high-current DIP16 darlington transistor array comprised of seven NPN darlington pairs. All units feature internal clamp diodes for switching inductive loads. MAXIMUM RATINGS (Ta=25, unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Output Sustaining Voltage Venus) 50 Vv Output Current Tour 500 mA DIM MILLIMETERS _ A 9.884 0.2 Input Voltage Vin* -0.5~ +30 Vv Bi 3.944 0.2 B2 6.004 0.3 Input Current Tin* 25 mA paseo 17-008 H 1.634 0.2 0.654 0.2 Clamp Reverse Voltage Vr 30 Vv : = : T 0.20+0.1/-0.05 Diode Forward Current Ip 500 mA GND Terminal Current Tenp 2.8 A P APV 1.47 WwW ower Pp Dissipation n= AFV 0.54 WwW FLP16 Operating Temperature Topr -40~85 Cc Storage Temperature Tste b9~ 150 Cc Except KID65001APV/AFV, **Only KID65001APV/AFV 1996 .2. 10 Revision No : 0 KEC 1/6KID65001APV/AFV ~ KID65004APV/AFV PIN CONNECTION (TOP VIEW) 0; Og 03g 04 05 06 Oy COMMON |16 18 Fp step oF 9 F ESrsrarstatst Th Ae ee ee Ae ee Ae I; Ig Ig Ig I5 Ig Iy GND SCHEMATICS (EACH DRIVER) KID65001APV/AFV KID65002APV/AFV >to COMMON o COMMON INPUT | + 0 OUTPUT o~f INPUT 7V }o OUTPUT 1996. 2. 10 Revision No : 0 KEC 2/6KID65001APV/AFV ~ KID65004APV/AFV RECOMMENDED OPERATING CONDITIONS (Ta=40~85'C) CHARACTERISTIC SYMBOL CONDITION MIN. | TYP. | MAX.| UNIT Output Sustaining Voltage Versus) 0 - 50 V Tpw=25ms, DF=10%, 7 Circuits 0 - A400 Output Current Tour mA Tpw=25ms, DF=30%, 7 Circuits 0 - 200 Input Voltage Vin Except KID65001APV/AFV 0 - 30 Vv Input Current In Only KID65001APV/AFV 0 - 5 mA Clamp Diode Reverse Voltage Vr - - 50 Vv Clamp Diode Forward Current Ip - - A400 mA Lo. APV - - 0.52 Power Dissipation Pp Ta=Topr(max) W AFV - - 0.32 ELECTRICAL CHARACTERISTICS (Ta=25, unless otherwise noted) CHARACTERISTICS SYMBOL clRcur TEST CONDITION MIN. | TYP. |MAX.} UNIT Von=50V, Ta=25'C - - 50 Output Leak Ver=00V, Ta=85T - - 100 C Tcex 1 = LA urrent KID65002APV/AFV Vcr=50V, Vin=6V - - 500 KID65004APV/AFV Vcr=50V, Vin=lV - - 500 Tour=350mA, In=500nA. - 13 1.6 Collector Emitter Verisan 2 Tour=200mA, Iiy=3500A - |a1]13] ov Saturation Voltage Tour=100mA, Ty=250nA - 0.9 11 KID65002APV/AFV Vin=17V - 0.82 | 1.25 KID65003APV/AFV Vin=3.80V - 0.93 | 1.35 . inion) 3 mA Input Current Vin=bV - 0.35 | 0.5 KID65004APV/AFV Vin=l2V - 1.0 | 1.45 Linvorr) 4 Tour=500KA, Ta=85T 50 65 - BA KID65002APV/AFV Vcr=2V, Iour=300mA - - 13 Vcr=2V, Tour=200mA - - 2.4 KID65003APV/AFV Von=2V, Iour=250mA - - 2.7 Von=2V, Iour=300mA - - 30 Input Voltage Vincon) 5 _ - Vv Ver=2V, Iour=125mA - - 5.0 Vcr=2V, Tout=200mA _ _ 6.0 KID65004APV/AFV Vcr=2V, lour=275mA - - 7.0 Vcr=2V, Tour=350mA - - 8.0 DC Current Transfer Ratio hye 2 Von=2V, Iour=350mA 1000 - - . Vr=50V, Ta=25C - - 50 Clamp Diode Reverse Current Tr 6 LA Vr=50V, Ta=85'C - - 100 Clamp Diode Forward Voltage Ve 7 Tp=350mA - - 2.0 Vv Input Capacitance Cin - 15 - pF Turn-ON Delay ton 3 Vorr=50V, R=1632 - 0.1 - R you ; . US Turn-OFF Delay torr Cr=15pF - 0.2 - 1996. 2. 10 Revision No : 0 3/6 KECKID65001APV/AFV ~ KID65004APV/AFV TEST CIRCUIT 1. Icgx &. Veg(sat) DFE OPEN OPEN IcEX | V OPEN CE VIN | VcE , VCE(sat) hpp= louT IIN 4. I IN(OFF) 3 IIN(ON) OPEN OPEN | IouT TIN(ON) OPEN TIN (OFF) 5. VIN(oN) OPEN 6. Ir | IouUT | IR OPEN VR V VIN(ON) 1 | oh OPEN 7 VR VF Ip OPEN OPEN 1996. 2. 10 Revision No : 0 KEC 4/6KID65001APV/AFV ~ KID65004APV/AFV 8. ton, torr Vout = 50V INPUT Ry = 1630 PULSE GENERATOR T OUTPUT Cy = 15pF | Note 1 Lo ap Note 3 tr tf 90% 90% VIH 50% 50% INPUT | Fi 10% 10%| 0 50HS ton torr Vou OUTPUT 50% 50% VoL Notes : 1. Pulse Width 50uS5, Duty Cycle 10% Output Impedance 502, t-<5ns, tr<10ns 2. See below Input Conditions Type Number Rr Vin KID65001APV/AFV 2.7k &2 3V KID65002APV/AFV 0 13V KID65003APV/AFV 0 38V KID65004APV/AFV 0 BV 3. CL includes probe and jig capacitance. 1996. 2. 10 Revision No : 0 KEC 5/6KID65001APV/AFV ~ KID65004APV/AFV KID65002APV/AFV KID65003APV/AFV Iw - Vin IIn- Vin ~ 20 & ~ 20 5 2.0 LL i 2.0 LL e 1.5 LL > =" e 1.5 WAX La 4 a | Typ. |. -7 fs 7 | jen o Z| - o Z| a" 1.01 > = => 1.0 Lt rye, 5 LE | MIN. o TMIN | = . ra Lr > . tot 0 0 12 14 16 18 20 22 24 26 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 INPUT VOLTAGE Vin (V) INPUT VOLTAGE Vyy (V) KID65004AVP/AFV I~w- Vin Iovt Vck(sat) ~ 20 4 600 ~ 2.0 ~, 900 17 z 3 4 _ = 400 7 ex 1.5 ce YY qj a & 300 wh f3 MAX. | ee O74 1.0 = +== pe , oO pe TYP _-- Pe > 200 7 Of = Ln - e 7 vy 5 0.5 o+ =~ _ D> 100 Z. Bs oe Eee MIN. by J 7 7 = 0 5 0 < 5 6 7 8 9 10 11 12 0.25 0.5 0.75 1.0 1.25 1.5 1.75 2.0 INPUT VOLTAGE Vyn (V) COLLECTOR-EMITTER SATURATION VOLTAGE Vcr (sat) (V) Iour - DUTY CYCLE 0 20 40 60 #480 100 DUTY CYCLE (%) 0 25 50 85 100 125 150 175 AMBIENT TEMPERATURE Ta (C) E 3 1.47 7 CIRCUITS a 400 5 5 BE : 300 1.0 = 2 a 5 200 ee 5 F 0 oO . & 100 me oe - 2 z o 0 E 0 1996. 2. 10 Revision No : 0 KEC 6/6